Abstract: A method for characterizing defects of integrated circuits on a semiconductor wafer includes storing at least one reference wafer map in a memory corresponding to a known defect pattern of the integrated circuits caused during a manufacturing step thereof, testing the integrated circuits for defects, generating a test wafer map for the semiconductor wafer comprising a pattern of each defective integrated circuit thereon, comparing the test wafer map to the at least one reference wafer map to determine if the known defect pattern is present in the test wafer map, and generating a new reference wafer map corresponding to the test wafer map if the test wafer map has an unknown defect pattern. An apparatus for characterizing defects of integrated circuit die on a semiconductor wafer is also provided.

Abstract: A method for processing semiconductor wafers includes forming a plurality of wafers each comprising a plurality of dies, performing a plurality of tests on the dies to determine good dies and failed dies, and packaging the good dies. The tests are performed on the good dies after packaging to determine good packaged dies and failed packaged dies. A determination is made as to which tests indicate both failed dies and failed packaged dies so that corrective action may be taken. A database is formed to include test data collected at wafer level on dies before they are packaged, and test data collected at package level after the good dies have been packaged. The database and the results of the test comparisons are made available via the Internet so that other facilities processing the same type devices can review and compare the information to their own data. A global or worldwide monitoring of the test data is thus made available.