Abstract: A photo-emitter x-ray source is provided that includes a photocathode electron source, a laser light source, where the laser light source illuminates the photocathode electron source to emit electrons, and an X-ray target, where the emitted electrons are focused on the X-ray target, where the X-ray target emits X-rays. The photocathode electron source can include alkali halides (such as CsBr and CsI), semiconductors (such as GaAs, InP), and theses materials modified with rare Earth element (such as Eu) doping, electron beam bombardment, and X-ray irradiation, and has a form factor that includes planar, patterned, or optically patterned. The X-ray target includes a material such as tungsten, copper, rhodium or molybdenum.

Abstract: A method of achieving heightened quantum efficiencies and extended photocathode lifetimes is provided that includes using an electron beam bombardment to activate color centers in a CsBr film of a photocathode, and using a laser source for pumping electrons in the color centers of the photocathode.

Abstract: A method of achieving heightened quantum efficiencies and extended photocathode lifetimes is provided that includes using an electron beam bombardment to activate color centers in a CsBr film of a photocathode, and using a laser source for pumping electrons in the color centers of the photocathode.

Abstract: A photo-emitter x-ray source is provided that includes a photocathode electron source, a laser light source, where the laser light source illuminates the photocathode electron source to emit electrons, and an X-ray target, where the emitted electrons are focused on the X-ray target, where the X-ray target emits X-rays. The photocathode electron source can include alkali halides (such as CsBr and CsI), semiconductors (such as GaAs, InP), and theses materials modified with rare Earth element (such as Eu) doping, electron beam bombardment, and X-ray irradiation, and has a form factor that includes planar, patterned, of optically patterned. The X-ray target includes a material such as tungsten, copper, rhodium or molybdenum. The laser light source is pulsed or steered according to light modulators that can include acousto-optics, mode-locking, micro-mirror array, and liquid crystals, and includes a nano-aperture or nano-particle arrays, where the nano-aperture is a C-aperture or a circular aperture.

Abstract: A multiple electron beam source comprises a photon source to generate a photon beam, a lens to focus the photon beam, a photocathode having a photon receiving surface and an electron emitting surface, and an array of electron transmission gates spaced apart from the electron emitting surface of the photocathode by a distance dg. In one version, the multiple electron beam source comprises a photocathode stage assembly to move the photocathode relative to the array of electron transmission gates. In one version, the multiple electron beam source also comprises a plasmon-generating photon transmission plate comprising an array of photon transmission apertures and exterior surfaces capable of supporting plasmons.

Abstract: An optical mask for high resolution optical lithography using short wavelength light, e.g., 157 nm, uses membranes of a material that is transparent to the desired wavelength. The thin membranes are held under tensile stress by a supporting structure, such as a silicon wafer. Because the membranes are thin, the heating of the membrane material during generation of the overlying lithographic patterns is reduced. This is particularly advantageous when a material such as calcium fluoride is used as the transparent medium of the mask because calcium fluoride has a high thermal expansion coefficient. Thus, the membrane will suffer little distortion during the production of the mask. The lithographic pattern is produced using a thin layer of a absorptive material, such as palladium. Because both the absorptive material and the membrane are thin, there is little back scattering during the generation of the lithographic pattern by e-beam writing, and consequently, no proximity correction is necessary.

Abstract: A universal mask for use in making Integrated Circuits. The individual size masks are produced on a wafer having standardized, large size membrane area. A combined X-ray blocking and membrane stiffening layer is applied on at least one side of the wafer. This stiffening/blocking layer includes an X-ray transparent region having a size commensurate with the desired exposure field and aligned therewith.

Abstract: An X-ray mask pellicle is capable of protecting the X-ray mask from contaminants and the wafer from contact with the X-ray absorber material of the mask. The X-ray mask pellicle is sufficiently thin to allow X-ray exposure at the required mask to wafer gaps yet is sufficiently durable, replaceable, tough and X-ray resistant to be used in X-ray lithography. A thin (organic or inorganic) X-ray mask pellicle to be placed covering the X-ray mask pattern area is fabricated as a thin film and attached to a support ring. A selected area of the pellicle film, tailored to cover the absorber pattern in the X-ray mask, is etched to decrease its thickness to below 2 .mu.m. If the thin film of the pellicle is not itself conductive, a thin conductive film may be coated on both sides. In an alternative embodiment, the separation between the pellicle and the X-ray mask can be achieved by forming the mask with a stepped profile.

Abstract: X-ray lithography is used in the fabrication of very large scale integrated circuits. Optical lithography techniques are used to create a preliminary mask with coarse features in the preparation of a high resolution x-ray mask. The E-beam tool may register the location of the E-beam relative to the optically written coarse features. This helps the tool to navigate according to the location of specific features.

Abstract: A pool table including a plurality of numbered balls. Also included is a playing surface with a rectangular configuration having a plurality of divots formed therein. Further provided is a ball collection assembly including a rectilinear periphery integrally formed about the edges of the playing surface with a plurality of vertically oriented bores formed therein. The ball collection assembly further includes at least one cut out formed in a top edge of the periphery. A spring is also included. Finally, at least one pool stick is adapted to utilize the spring for imparting motion to one of the balls.

Abstract: This is a process for aligning an x-ray lithography system including an x-ray mask and a work piece with an alignment mark. A zone plate lens is used in the x-ray mask. X-rays are directed through the zone plate lens to the alignment mark to detect when the lens is aligned with the mark by emission of photoelectrons generated by the work piece in response to the x-rays. The change of current when the x-ray beam crosses a feature on the alignment mark is detected by a properly biased zone plate or grating. The alignment mark can be an etched slot or a metal feature.

Abstract: A thin film structure for correcting magnification errors in X-ray lithography. On a conductive substrate a low dielectric constant thin film is deposited. A piezoelectric film is deposited on the low dielectric constant thin film. An electrode array is positioned on the piezoelectric film to provide a relatively uniform electric field across the electrode array. The structure may be oriented around or in the X-ray exposure area. If located outside it may be orthogonally or circularly placed about the exposure area.

Abstract: A pinchuck is formed in accordance with this invention by using lithographic techniques to define and to etch a pattern of pins from an extremely flat etchable surface. Since the pins are formed from a surface which is already flat, it is not necessary to level or polish the pins after they are formed. Since lithographic techniques are used, the pin head dimensions, the number of pins, the arrangement of pins, and the density of pins all may be freely chosen without affecting the fabrication cost. By surrounding the region of etched pins with an unetched band, a raised peripheral ring will be formed which can act as a vacuum sealing ring when the pinchuck is used as a vacuum pinchuck. By fabricating the pins from an electrically conductive material (such as doped silicon) and then covering the pins with a dielectric film (such as silicon dioxide), the pinchuck can be used as an electrostatic pinchuck.

Abstract: A high-power X-ray source comprises a stationary hollow metallic cone. X-rays are emitted from a portion of the surface of the inside of the cone in response to bombardment of the surface portion by electrons. By means of a unique diverter, a substantially uniform and turbulent flow of water characterized by nucleate boiling is established in the immediate vicinity of the outside surface of the cone to achieve highly efficient cooling thereof. As a result, reliable operation of an X-ray source at high power densities is realized.

Abstract: The thicknesses of the thin film components of a sample that comprises plural thin films deposited on top of each other on a substrate are simultaneously measured by an x-ray-fluorescence system. Incident x-rays excite x-ray fluorescence in the sample. Detection of the excited fluorescence is enhanced by a unique collimator assembly that is also adapted to enable direct monitoring of the intensity of the incident x-rays.