Abstract: A medical communication system based on an Internet of Things is provided.

Abstract: Some embodiments of the disclosure provide a digital medical image teaching and research system. In some examples, the system includes a management side, a learning side, and a central processing unit. Both the management side and the learning side are connected to the central processing unit. In other examples, the management side includes an administrator login module, a management side control module, a teaching video module, a database, and a network connection module. The management side is configured to acquire medical image data and to generate a teaching video for scientific research personnel to perform scientific research and learning personnel to learn. The learning side includes a learning login module, a teaching video application module, and a learning side control module. The learning side is used for learning the teaching video. In further examples, a scientific research side is for the scientific research personnel to perform scientific research.

Abstract: Provided is a photovoltaic module, including a first intermediate busbar having a first lead-out terminal provided at an end thereof; a second intermediate busbar having a second lead-out terminal provided at an end thereof; and a first jumper wire arranged on a first isolation bar; the first lead-out terminal and the second lead-out terminal are located on two opposite sides of the first jumper wire, and the first lead-out terminal and the second lead-out terminal abut against two opposite side surfaces of the first isolation bar or overlap a top surface of the first isolation bar. Compared with the related art, the first isolation bar where the first jumper wire is located is clamped or pressed by the first lead-out terminal and the second lead-out terminal, to prevent short circuit or shielding of the cell caused by free movement of the first jumper wire, the first and second intermediate busbars.

Abstract: Various embodiments provide semiconductor packaging structures and methods for forming the same. In an exemplary method, a chip having a metal interconnect structure thereon can be provided. An insulating layer can be formed on the chip to expose the metal interconnect structure. A columnar electrode can be formed on the metal interconnect structure. A portion of the metal interconnect structure surrounding a bottom of the columnar electrode can be exposed. A diffusion barrier layer can be formed on sidewalls and a top surface of the columnar electrode, and on the exposed portion of the metal interconnect structure surrounding the bottom of the columnar electrode. A solder ball can then be formed on the diffusion barrier layer. The solder ball can wrap at least the sidewalls and the top surface of the columnar electrode.

Abstract: A semiconductor packaging method is provided. The method includes providing a semiconductor substrate. The semiconductor substrate has a first surface and a second surface, and an electroplating seed layer on the first surface of the semiconductor substrate. The method also includes forming a plurality of columnar electrodes over the electroplating seed layer, where the columnar electrodes include first columnar electrodes and second columnar electrodes. Further, the method includes forming a diffusion barrier layer over the first columnar electrodes and the second columnar electrodes, forming a plurality of first solder balls over the diffusion barrier layer on the first columnar electrodes. The method also includes providing a packaging substrate having solder terminals corresponding to the first solder balls, and mounting the semiconductor substrate onto the packaging substrate in a flipped position, such that the first solder balls are connected with the solder terminals.

Abstract: A semiconductor packaging method is provided. The method includes providing a semiconductor substrate. The semiconductor substrate has a first surface and a second surface, and an electroplating seed layer on the first surface of the semiconductor substrate. The method also includes forming a plurality of columnar electrodes over the electroplating seed layer, where the columnar electrodes include first columnar electrodes and second columnar electrodes. Further, the method includes forming a diffusion barrier layer over the first columnar electrodes and the second columnar electrodes, forming a plurality of first solder balls over the diffusion barrier layer on the first columnar electrodes. The method also includes providing a packaging substrate having solder terminals corresponding to the first solder balls, and mounting the semiconductor substrate onto the packaging substrate in a flipped position, such that the first solder balls are connected with the solder terminals.

Abstract: A semiconductor packaging method is provided. The method includes providing a semiconductor substrate. The semiconductor substrate has a first surface and a second surface, and an electroplating seed layer on the first surface of the semiconductor substrate. The method also includes forming a plurality of columnar electrodes over the electroplating seed layer, where the columnar electrodes include first columnar electrodes and second columnar electrodes. Further, the method includes forming a diffusion barrier layer over the first columnar electrodes and the second columnar electrodes, forming a plurality of first solder balls over the diffusion barrier layer on the first columnar electrodes. The method also includes providing a packaging substrate having solder terminals corresponding to the first solder balls, and mounting the semiconductor substrate onto the packaging substrate in a flipped position, such that the first solder balls are connected with the solder terminals.

Abstract: Various embodiments provide semiconductor packaging structures and methods for forming the same. In an exemplary method, a chip having a metal interconnect structure thereon can be provided. An insulating layer can be formed on the chip to expose the metal interconnect structure. A columnar electrode can be formed on the metal interconnect structure. A portion of the metal interconnect structure surrounding a bottom of the columnar electrode can be exposed. A diffusion barrier layer can be formed on sidewalls and a top surface of the columnar electrode, and on the exposed portion of the metal interconnect structure surrounding the bottom of the columnar electrode. A solder ball can then be formed on the diffusion barrier layer. The solder ball can wrap at least the sidewalls and the top surface of the columnar electrode.

Abstract: A semiconductor packaging method is provided. The method includes providing a semiconductor substrate. The semiconductor substrate has a first surface and a second surface, and an electroplating seed layer on the first surface of the semiconductor substrate. The method also includes forming a plurality of columnar electrodes over the electroplating seed layer, where the columnar electrodes include first columnar electrodes and second columnar electrodes. Further, the method includes forming a diffusion barrier layer over the first columnar electrodes and the second columnar electrodes, forming a plurality of first solder balls over the diffusion barrier layer on the first columnar electrodes. The method also includes providing a packaging substrate having solder terminals corresponding to the first solder balls, and mounting the semiconductor substrate onto the packaging substrate in a flipped position, such that the first solder balls are connected with the solder terminals.