Abstract: A semiconductor package structure includes a substrate, a composite interposer, and a semiconductor die. The composite interposer is disposed over the substrate and includes a first interposer substrate and a second interposer substrate. The first interposer substrate includes a first conductive via and a first dielectric layer. The second interposer substrate is disposed over the first interposer substrate and includes a second conductive via and a second dielectric layer. The second conductive via is bonded to the first conductive via, and the second dielectric layer is bonded to the first dielectric layer. The semiconductor die is disposed over the composite interposer and is electrically coupled to the first conductive via and the second conductive via.

Abstract: The present invention provides the identification of a number of SNPs that are associated schizophrenia, schizoaffective disorder, bipolar disorder and related mental disorders which were found to be strongly linked to individuals with the disease. The invention provides SNP locations on human chromosome 6, as well as methods of making PCR primers and assays for detecting the SNPs in tested individuals.