Abstract: A method of operating a variable displacement pump in a pressurized fluid supply system for an agricultural vehicle, including maintaining a constant displacement of the pump as rotational speed of the input drive to the pump increases to a first value of 1500 rpm and thereafter adjusting the displacement of the pump to maintain a constant output fluid flow 230 L/min or reduced flow as rotational speed of the input drive to the pump increases beyond the first value to a maximum value of 2100 rpm.

Abstract: A method of operating a variable displacement pump in a pressurized fluid supply system for an agricultural vehicle, including maintaining a constant displacement of the pump as rotational speed of the input drive to the pump increases to a first value of 1500 rpm and thereafter adjusting the displacement of the pump to maintain a constant output fluid flow 230 L/min or reduced flow as rotational speed of the input drive to the pump increases beyond the first value to a maximum value of 2100 rpm.

Abstract: A mechanically operated proportional flow control valve (8) which a valve spool (9) is described, which is moveable between two end limits limiting a regulating range. A device (20, 22) is described for selectively limiting the regulating range of the valve (8). This device can be used to block “locked-in” positions (F1, RH1) of the spool (9) at the end limits of the regulating range. The device includes a locking bar 20 which has locking formations (28, 29) which engage a pin (22) on a lever (11) connected with the spool (9).

Abstract: A mechanically operated proportional flow control valve (8) which a valve spool (9) is described, which is moveable between two end limits limiting a regulating range. A device (20, 22) is described for selectively limiting the regulating range of the valve (8). This device can be used to block “locked-in” positions (F1, RH1) of the spool (9) at the end limits of the regulating range. The device includes a locking bar 20 which has locking formations (28, 29) which engage a pin (22) on a lever (11) connected with the spool (9).

Abstract: Auxiliary openings are assigned to openings on a mask to be transferred to a wafer. These auxiliary openings have a phase-shifting property, preferably between 160° and 200° with respect to the openings, and a cross section lying below the limiting dimension for the printing of the projection apparatus, so that the auxiliary openings themselves are not printed onto the wafer. However, the auxiliary openings do enhance the contrast of the aerial image, in particular of an associated, isolated or semi-isolated opening on the wafer. The auxiliary openings may have a distance from the opening that lies above the resolution limit of the projection apparatus but that is less than the coherence length of the light used for the projection. A phase-related utilization of the optical proximity effect results, which can produce elliptical structures from square openings on the mask when the auxiliary openings are disposed in the preferential direction.

Abstract: A photolithographic fabrication method for a microstructure on a substrate, in particular interconnects of a DRAM (dynamic random access memory), includes a first exposure with at least one alternating phase mask. Then, at least one postexposure is carried out after the first exposure with a trimming mask. The trimming mask has at least two trimming openings for producing at least one alternating phase shift. Postexposure even of very small parts of microstructures is thus possible, so that the entire microstructure can be arranged in a space-saving manner on the substrate.

Abstract: A method is provided in which a pattern for a phase-shifting mask is firstly corrected in a first correction step. Subsequently, the pattern for the trimming mask is corrected with use of the corrected pattern for the phase-shifting mask in a second correction step. Mask data for the production of very-large-scale integrated circuits can be corrected in a simple manner by means of the two correction steps performed in succession.

Abstract: A carrier has a surface with a mask layer thereon. An irradiation-sensitive layer on the mask layer is exposed and developed to form a first exposure structure. The first exposure structure is used as an etching mask while the mask layer is etched. The first exposure structure is subsequently removed. A second irradiation-sensitive layer is applied to the mask layer and the carrier. The second irradiation-sensitive layer is exposed with a first exposure dose and a second exposure dose. The second irradiation-sensitive layer is subsequently developed to form a second exposure structure with a first and second exposure structure thickness. The carrier is etched down to a first etching depth in the region of the first exposure structure thickness and down to a second etching depth in the region of the second exposure structure thickness. The first etching depth is larger than the second etching depth.

Abstract: For lithographically producing the smallest structures at less than the exposure wavelengths in semiconductor fabrication, a double exposure is carried out using a thick phase mask and a trimming mask, the trimming mask further structures the phase-contrast lines produced by the phase mask. Besides transparent or opaque regions, the trimming mask also has phase-shifting regions. These surround transparent regions of the trimming mask through which the phase-contrast lines produced by the first mask are locally re-exposed, that is to say interrupted. The intensity profile of successive line sections is especially rich in contrast through the addition of the phase-shifting partially transparent regions on the second mask; the distances between the line sections can be reduced. The trimming mask, otherwise used only for larger structures, is therefore suitable for the configuration of the finest dimensionally critical structures.

Abstract: A method is provided in which a pattern for a phase-shifting mask is firstly corrected in a first correction step. Subsequently, the pattern for the trimming mask is corrected with use of the corrected pattern for the phase-shifting mask in a second correction step. Mask data for the production of very-large-scale integrated circuits can be corrected in a simple manner by means of the two correction steps performed in succession.