Patents by Inventor Juergen Musolf
Juergen Musolf has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10109647Abstract: A method of fabricating a high mobility semiconductor metal oxide thin film transistor including the steps of depositing a layer of semiconductor metal oxide material, depositing a blanket layer of etch-stop material on the layer of MO material, and patterning a layer of source/drain metal on the blanket layer of etch-stop material including etching the layer of source/drain metal into source/drain terminals positioned to define a channel area in the semiconductor metal oxide layer. The etch-stop material being electrically conductive in a direction perpendicular to the plane of the blanket layer at least under the source/drain terminals to provide electrical contact between each of the source/drain terminals and the layer of semiconductor metal oxide material. The etch-stop material is also chemical robust to protect the layer of semiconductor metal oxide channel material during the etching process.Type: GrantFiled: June 3, 2016Date of Patent: October 23, 2018Assignee: CBRITE INC.Inventors: Gang Yu, Chan-Long Shieh, Juergen Musolf, Fatt Foong, Tian Xiao
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Patent number: 9773918Abstract: A thin film circuit includes a thin film transistor with a metal oxide semiconductor channel having a conduction band minimum (CBM) with a first energy level. The transistor further includes a layer of passivation material covering at least a portion of the metal oxide semiconductor channel. The passivation material has a conduction band minimum (CBM) with a second energy level. The second energy level being lower than, equal to, or no more than 0.5 eV above the first energy level. The circuit is used for an electronic device including any one of an AMLCD, AMOLED, AMLED, AMEPD.Type: GrantFiled: June 29, 2015Date of Patent: September 26, 2017Assignee: CBRITE INC.Inventors: Gang Yu, Chan-Long Shieh, Juergen Musolf, Fatt Foong, Tian Xiao
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Publication number: 20170069662Abstract: A method of fabricating a high mobility semiconductor metal oxide thin film transistor including the steps of depositing a layer of semiconductor metal oxide material, depositing a blanket layer of etch-stop material on the layer of MO material, and patterning a layer of source/drain metal on the blanket layer of etch-stop material including etching the layer of source/drain metal into source/drain terminals positioned to define a channel area in the semiconductor metal oxide layer. The etch-stop material being electrically conductive in a direction perpendicular to the plane of the blanket layer at least under the source/drain terminals to provide electrical contact between each of the source/drain terminals and the layer of semiconductor metal oxide material. The etch-stop material is also chemical robust to protect the layer of semiconductor metal oxide channel material during the etching process.Type: ApplicationFiled: June 3, 2016Publication date: March 9, 2017Inventors: Gang Yu, Chan-Long Shieh, Juergen Musolf, Fatt Foong, Tian Xiao
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Publication number: 20170033202Abstract: A method of fabricating a stable high mobility amorphous MOTFT includes a step of providing a substrate with a gate formed thereon and a gate dielectric layer positioned over the gate. A carrier transport structure is deposited by sputtering on the gate dielectric layer. The carrier transport structure includes a layer of amorphous high mobility metal oxide adjacent the gate dielectric and a relatively inert protective layer of material deposited on the layer of amorphous high mobility metal oxide both deposited without oxygen and in situ. The layer of amorphous metal oxide has a mobility above 40 cm2/Vs and a carrier concentration in a range of approximately 1018 cm?3 to approximately 5×1019 cm?3. Source/drain contacts are positioned on the protective layer and in electrical contact therewith.Type: ApplicationFiled: May 31, 2016Publication date: February 2, 2017Inventors: Chan-Long Shieh, Gang Yu, Fatt Foong, Juergen Musolf
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Publication number: 20160293769Abstract: A method of fabricating a stable, high mobility metal oxide thin film transistor includes the steps of providing a substrate, positioning a gate on the substrate, and depositing a gate dielectric layer on the gate and portions of the substrate not covered by the gate. A multiple film active layer including a metal oxide semiconductor film and a metal oxide passivation film is deposited on the gate dielectric with the passivation film positioned in overlying relationship to the semiconductor film. An etch-stop layer is positioned on a surface of the passivation film and defines a channel area in the active layer. A portion of the multiple film active layer on opposite sides of the etch-stop layer is modified to form an ohmic contact and metal source/drain contacts are positioned on the modified portion of the multiple film active layer.Type: ApplicationFiled: June 20, 2016Publication date: October 6, 2016Inventors: Chan-Long Shieh, Gang Yu, Fatt Foong, Tian Xiao, Juergen Musolf
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Patent number: 9379247Abstract: A method of fabricating a stable, high mobility metal oxide thin film transistor includes the steps of providing a substrate, positioning a gate on the substrate, and depositing a gate dielectric layer on the gate and portions of the substrate not covered by the gate. A multiple film active layer including a metal oxide semiconductor film and a metal oxide passivation film is deposited on the gate dielectric with the passivation film positioned in overlying relationship to the semiconductor film. An etch-stop layer is positioned on a surface of the passivation film and defines a channel area in the active layer. A portion of the multiple film active layer on opposite sides of the etch-stop layer is modified to form an ohmic contact and metal source/drain contacts are positioned on the modified portion of the multiple film active layer.Type: GrantFiled: June 28, 2012Date of Patent: June 28, 2016Assignee: CBRITE INC.Inventors: Chan-Long Shieh, Gang Yu, Fatt Foong, Tian Xiao, Juergen Musolf
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Patent number: 9362413Abstract: A method of fabricating a high mobility semiconductor metal oxide thin film transistor including the steps of depositing a layer of semiconductor metal oxide material, depositing a blanket layer of etch-stop material on the layer of MO material, and patterning a layer of source/drain metal on the blanket layer of etch-stop material including etching the layer of source/drain metal into source/drain terminals positioned to define a channel area in the semiconductor metal oxide layer. The etch-stop material being electrically conductive in a direction perpendicular to the plane of the blanket layer at least under the source/drain terminals to provide electrical contact between each of the source/drain terminals and the layer of semiconductor metal oxide material. The etch-stop material is also chemical robust to protect the layer of semiconductor metal oxide channel material during the etching process.Type: GrantFiled: November 15, 2013Date of Patent: June 7, 2016Assignee: CBRITE INC.Inventors: Gang Yu, Chan-Long Shieh, Juergen Musolf, Fatt Foong, Tian Xiao
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Patent number: 9356156Abstract: A method of fabricating a stable high mobility amorphous MOTFT includes a step of providing a substrate with a gate formed thereon and a gate dielectric layer positioned over the gate. A carrier transport structure is deposited by sputtering on the gate dielectric layer. The carrier transport structure includes a layer of amorphous high mobility metal oxide adjacent the gate dielectric and a relatively inert protective layer of material deposited on the layer of amorphous high mobility metal oxide both deposited without oxygen and in situ. The layer of amorphous metal oxide has a mobility above 40 cm2/Vs and a carrier concentration in a range of approximately 1018 cm?3 to approximately 5×1019 cm?3. Source/drain contacts are positioned on the protective layer and in electrical contact therewith.Type: GrantFiled: May 24, 2013Date of Patent: May 31, 2016Assignee: CBRITE INC.Inventors: Chan-Long Shieh, Gang Yu, Fatt Foong, Juergen Musolf
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Publication number: 20150303311Abstract: A thin film circuit includes a thin film transistor with a metal oxide semiconductor channel having a conduction band minimum (CBM) with a first energy level. The transistor further includes a layer of passivation material covering at least a portion of the metal oxide semiconductor channel. The passivation material has a conduction band minimum (CBM) with a second energy level. The second energy level being lower than, equal to, or no more than 0.5 eV above the first energy level. The circuit is used for an electronic device including any one of an AMLCD, AMOLED, AMLED, AMEPD.Type: ApplicationFiled: June 29, 2015Publication date: October 22, 2015Inventors: Gang Yu, Chan-Long Shieh, Juergen Musolf, Fatt Foong, Tian Xiao
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Patent number: 9070779Abstract: A metal oxide thin film transistor includes a metal oxide semiconductor channel with the metal oxide semiconductor having a conduction band with a first energy level. The transistor further includes a layer of passivation material covering at least a portion of the metal oxide semiconductor channel. The passivation material has a conduction band with a second energy level equal to, or less than 0.5 eV above the first energy level.Type: GrantFiled: December 18, 2012Date of Patent: June 30, 2015Assignee: CBRITE Inc.Inventors: Chan-Long Shieh, Fatt Foong, Juergen Musolf, Gang Yu
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Publication number: 20150137113Abstract: A method of fabricating a high mobility semiconductor metal oxide thin film transistor including the steps of depositing a layer of semiconductor metal oxide material, depositing a blanket layer of etch-stop material on the layer of MO material, and patterning a layer of source/drain metal on the blanket layer of etch-stop material including etching the layer of source/drain metal into source/drain terminals positioned to define a channel area in the semiconductor metal oxide layer. The etch-stop material being electrically conductive in a direction perpendicular to the plane of the blanket layer at least under the source/drain terminals to provide electrical contact between each of the source/drain terminals and the layer of semiconductor metal oxide material. The etch-stop material is also chemical robust to protect the layer of semiconductor metal oxide channel material during the etching process.Type: ApplicationFiled: November 15, 2013Publication date: May 21, 2015Inventors: Gang Yu, Chan-Long Shieh, Juergen Musolf, Fatt Foong, Tian Xiao
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Publication number: 20140346495Abstract: A method of fabricating a stable high mobility amorphous MOTFT includes a step of providing a substrate with a gate formed thereon and a gate dielectric layer positioned over the gate. A carrier transport structure is deposited by sputtering on the gate dielectric layer. The carrier transport structure includes a layer of amorphous high mobility metal oxide adjacent the gate dielectric and a relatively inert protective layer of material deposited on the layer of amorphous high mobility metal oxide both deposited without oxygen and in situ. The layer of amorphous metal oxide has a mobility above 40 cm2/Vs and a carrier concentration in a range of approximately 1018 cm?3 to approximately 5×1019 cm?3. Source/drain contacts are positioned on the protective layer and in electrical contact therewith.Type: ApplicationFiled: May 24, 2013Publication date: November 27, 2014Inventors: Chan- Long Shieh, Gang Yu, Fatt Foong, Juergen Musolf
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Publication number: 20140167047Abstract: A metal oxide thin film transistor includes a metal oxide semiconductor channel with the metal oxide semiconductor having a conduction band with a first energy level. The transistor further includes a layer of passivation material covering at least a portion of the metal oxide semiconductor channel. The passivation material has a conduction band with a second energy level equal to, or less than 0.5 eV above the first energy level.Type: ApplicationFiled: December 18, 2012Publication date: June 19, 2014Inventors: Chan-Long Shieh, Fatt Foong, Juergen Musolf, Gang Yu
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Publication number: 20140001462Abstract: A method of fabricating a stable, high mobility metal oxide thin film transistor includes the steps of providing a substrate, positioning a gate on the substrate, and depositing a gate dielectric layer on the gate and portions of the substrate not covered by the gate. A multiple film active layer including a metal oxide semiconductor film and a metal oxide passivation film is deposited on the gate dielectric with the passivation film positioned in overlying relationship to the semiconductor film. An etch-stop layer is positioned on a surface of the passivation film and defines a channel area in the active layer. A portion of the multiple film active layer on opposite sides of the etch-stop layer is modified to form an ohmic contact and metal source/drain contacts are positioned on the modified portion of the multiple film active layer.Type: ApplicationFiled: June 28, 2012Publication date: January 2, 2014Inventors: Chan-Long Shieh, Gang Yu, Fatt Foong, Tian Xiao, Juergen Musolf
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Patent number: 6283256Abstract: A holding spring arrangement for a spot-type disc brake, in particular an integrated disc brake for automotive vehicles, wherein a brake carrier of the disc brake is integrated into the steering knuckle of the vehicle, and the holding spring includes at least one spring arm which extends generally in a circumferential direction and clamps the housing of the disc brake and the brake carrier to one another in a radial direction. To largely prevent tilting of the outward brake pad, according to the present invention, a holding element is provided for mounting the housing holding spring on the brake pad, which holding element is particularly made of sheet metal and supported on a part of the brake housing.Type: GrantFiled: August 19, 1999Date of Patent: September 4, 2001Assignee: Continental Teves AG & Co. OHGInventors: Günther Dahlheimer, Uwe Schwalm, Thomas Bender, Michael Meiss, Hans-Dieter Leidecker, Jürgen Musolf
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Patent number: 6269734Abstract: It is frequently important for the piston of a hydraulic piston-and-cylinder assembly, in particular the brake piston of a disc brake, which is slidably arranged within a cylinder bore to ensure a true-to-size mounting position of the piston inside the cylinder bore. Especially in the case of brake pistons of a disc brake, this determines the efficiency of provisions on the brake piston for reducing the occurrence of brake noises. According to the present invention, a key-type accommodation is provided on the piston which permits engagement by a matingly configured mounting means or mounting tool and, thus, renders possible the defined positioning of the piston within a cylinder bore.Type: GrantFiled: August 4, 2000Date of Patent: August 7, 2001Assignee: Continental Teves AG & Co., OHGInventors: Hans-Dieter Leidecker, Manfred Reuter, Norman Langer, Jürgen Musolf, Thomas Kirschner, Volker Bartsch, Holger Carota, Klaus-Peter Walter, Winfried Gerhardt
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Patent number: 5152376Abstract: A seal arrangement is disclosed for an actuating device of a drum brake furnished with an actuating lever which projects through the brake carrier. This arrangement includes an oval pleated bellows (1) fastened by a clamping ring (14) having teeth (15) arranged on its external edge (30) pressed into the wall of a matching, generally elliptical recess. Preferably, the pleated bellows is of asymmetrical configuration and is in a largely unloaded condition in the actuating position of the actuating lever.Type: GrantFiled: March 5, 1991Date of Patent: October 6, 1992Assignee: Alfred Teves GmbHInventors: Rolf Weiler, Claus-Peter Panek, Juergen Musolf