Abstract: In a multi-layered structure of the organic EL diode, a gate insulating layer is formed on a buffer layer. A first insulating layer is formed on the gate insulating layer. An anode is formed on the first insulating layer. Second and third insulating layers commonly having an open portion are sequentially formed on the anode. An organic EL layer and a cathode are connected to the anode through the open portion. The anode is connected to a drain electrode 126 of a TFT through an anode contact hole and the TFT is insulated from the organic EL layer by the third insulating layer.

Abstract: An organic electroluminescent device including a substrate, a gate line on the substrate, a data line on the substrate, wherein the data line crosses the gate line, a switching element connected to the gate line and the data line, a plurality of driving elements connected to the switching element, each of the plurality of driving elements are interconnected in parallel, and an organic electroluminescent diode connected to each of the plurality of driving elements.

Abstract: An active matrix organic electro luminescent display (ELD) device comprises a substrate, first and second active layers formed of polycrystalline silicon on the substrate, first source and drain regions and second source and drain regions, the first source and drain regions neighboring the first active layer and the second source and drain regions neighboring the second active layer, a gate insulating layer on the first and second active layers, first and second gate electrodes on the gate insulating layer, a first inter layer on the first and second gate electrodes, an anode electrode and a capacitor electrode on the first inter layer, a first passivation layer on the anode electrode and the capacitor electrode, a power line on the first passivation layer, first source and drain electrodes on the first passivation layer, the first source electrode being connected to the first source region and the first drain electrode being connected to the first drain region, second source and drain electrodes on the first

Abstract: The present invention discloses a thin film transistor (TFT) and fabrication method thereof for a liquid crystal display device.

Abstract: This invention relates to a driving apparatus for an electro luminescence panel that is capable of preventing deterioration of a picture quality caused by the reduction of a driving electric current which occurs when a gate signal is turned off. A driving apparatus of an electro luminescence panel according to the present invention includes a power supply VDD for supplying power source to the electro luminescence cell OLED, a first TFT connected between the power supply and the data line, a second TFT connected between the power supply and the electro luminescence cell OLED, a third TFT connected between the power supply and the first TFT for switching according to a signal on the gate line, a fourth TFT connected between gate electrodes of the first and second PMOS TFTs and the data line for switching according to a signal on the gate line and a path of a data signal from the data line, and a capacitor connected between the gate electrodes of the first and second PMOS TFT's and the power supply.

Abstract: The present invention discloses a thin film transistor (TFT) and fabrication method thereof for a liquid crystal display device.

Abstract: The present invention discloses a thin film transistor (TFT) and fabrication method thereof for a liquid crystal display device.

Abstract: The present invention discloses a thin film transistor (TFT) and fabrication method thereof for a liquid crystal display device.