Abstract: An image sensor includes a semiconductor substrate in which a plurality of photo-sensing elements are integrated, an organic active layer on the semiconductor substrate, an interlayer between the organic active layer and the semiconductor substrate, and optionally a color filter layer on the organic active layer. The organic active layer includes a singlet fission material. The interlayer includes a dielectric selected from an oxide, a nitride, oxynitride, fluoride, oxyfluoride, and any combination thereof.

Abstract: A field effect transistor (FET) is provided. The FET includes a first material layer, second material layer and a third material layer. The third material layer includes an n-type silicon substrate layer and a gate electrode. The gate electrode includes an insulating substrate with at least one conducting metal. The second material layer is disposed on the third material layer. The first material layer is disposed on the second material layer. A source electrode is disposed on the first material layer. A drain electrode is disposed on the first material layer. A plurality of gold nanostructures are disposed on an active channel of the FET. The plurality of gold nanostructures are electrically isolated from the source electrode, drain electrode and gate electrode. The plurality of gold nanostructures contribute to a drain current of the FET based at least in part on plasmonic absorption of photons.