Abstract: A photoresist composition includes a mixture. The mixture includes a first photosensitive material and a second photosensitive material. The first photosensitive material is a 6-Sn oxide cluster, a 12-Sn oxide cluster or a combination thereof. The second photosensitive material has a composition being different from a composition of the first photosensitive material.

Abstract: A method of manufacturing a semiconductor device includes the following steps. A photoresist layer is formed over a material layer on a substrate. The photoresist layer has a composition including a solvent and a first photo-active compound dissolved in the solvent. The first photo-active compound is represented by the following formula (A1) or formula (A2): Zr12O8(OH)14(RCO2)18 ??Formula (A1); or Hf6O4(OH)6(RCO2)10 ??Formula (A2). R in the formula (A1) and R in the formula (A2) each include one of the following formulae (1) to (6): The photoresist layer is patterned. The material layer is etched using the photoresist layer as an etch mask.

Abstract: A method of manufacturing a semiconductor device includes the following steps. A photoresist layer is formed over a material layer on a substrate. The photoresist layer has a composition including a solvent and a first photo-active compound dissolved in the solvent. The first photo-active compound is represented by the following formula (Al) or formula (A2): Zr12O8(OH)14(RCO2)18??Formula (A1); or Hf6O4(OH)6(RCO2)10??Formula (A2). R in the formula (A1) and R in the formula (A2) each include one of the following formulae (1) to (6): The photoresist layer is patterned. The material layer is etched using the photoresist layer as an etch mask.

Abstract: The present disclosure is directed to organotin cluster compounds having formula (I) and their use as photoresists in extreme ultraviolet lithography processes.

Abstract: A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate, selectively exposing the photoresist layer to an EUV radiation, and developing the selectively exposed photoresist layer. The photoresist layer has a composition including a solvent and a photo-active compound dissolved in the solvent and composed of a molecular cluster compound incorporating hexameric tin and two chloro ligands.

Abstract: The present disclosure is directed to organotin cluster compounds having formula (I) and their use as photoresists in extreme ultraviolet lithography processes.

Abstract: The present disclosure is directed to organotin cluster compounds having formula (I) and their use as photoresists in extreme ultraviolet lithography processes.

Abstract: The present disclosure is directed to organotin cluster compounds having formula (I) and their use as photoresists in extreme ultraviolet lithography processes.

Abstract: An atomic layer deposition method is provided. The atomic layer deposition method includes the following steps. A substrate is placed in a reaction chamber. At least one deposition cycle is performed to deposit a metal film on the substrate. The at least one deposition cycle includes the following steps. A metal precursor is introduced in the reaction chamber. A hydrogen plasma is introduced to be reacted with the metal precursor adsorbed on the substrate to form the metal film. An annealing process is performed on the metal film. The at least one deposition cycle is performed in a hydrogen atmosphere under UV light irradiation.

Abstract: An atomic layer deposition method is provided. The atomic layer deposition method includes the following steps. A substrate is placed in a reaction chamber. At least one deposition cycle is performed to deposit a metal film on the substrate. The at least one deposition cycle includes the following steps. A metal precursor is introduced in the reaction chamber. A hydrogen plasma is introduced to be reacted with the metal precursor adsorbed on the substrate to form the metal film. An annealing process is performed on the metal film. The at least one deposition cycle is performed in a hydrogen atmosphere under UV light irradiation.

Abstract: An organic electroluminescent material of the formula: wherein M is at least one selected from the group consisting of —CH2—, —CH2CH2—, —CH2CH2CH2—, —CH2C(CH3)2CH2—, and —CH2YCH2—, X is at least one selected from the group consisting of oxygen, sulfur, nitrogen, carbon, alkyl, silicon, silyl, phosphorus, aryl, and polyaryl, and n is depending on the amount of free radicals of X. Y is at least one selected from the group consisting of oxygen, sulfur, nitrogen and SiR1R2. Wherein, R1 and R2 is at least one selected from the group consisting of substituted or unsubstituted alkyl having 1 to 10 carbon atoms, and substituted or unsubstituted aryl having 6 to 30 carbon atoms. This invention also discloses an organic electroluminescent element having the organic electroluminescent material.

Abstract: An organic electroluminescent material of the formula: 1