Patents by Inventor Jui-Ming SHIH
Jui-Ming SHIH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230377912Abstract: A method includes rotating a wafer, dispensing a liquid from a center of the wafer to a peripheral edge of the wafer to control a temperature of the wafer, and etching an etch layer of the wafer with an etchant during or after dispensing the liquid. The liquid is dispensed through a nozzle.Type: ApplicationFiled: July 28, 2023Publication date: November 23, 2023Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Manish Kumar SINGH, Bo-Wei CHOU, Jui-Ming SHIH, Wen-Yu KU, Ping-Jung HUANG, Pi-Chun YU
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Patent number: 11784065Abstract: A method includes rotating a wafer, dispensing a liquid from a center of the wafer to an edge of the wafer to control a temperature of the wafer, and etching an etch layer of the wafer with an etchant during or after dispensing the liquid. The liquid is dispensed through a nozzle.Type: GrantFiled: May 6, 2019Date of Patent: October 10, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Manish Kumar Singh, Bo-Wei Chou, Jui-Ming Shih, Wen-Yu Ku, Ping-Jung Huang, Pi-Chun Yu
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Patent number: 11495684Abstract: An embodiment method includes forming a patterned etch mask over a target layer and patterning the target layer using the patterned etch mask as a mask to form a patterned target layer. The method further includes performing a first cleaning process on the patterned etch mask and the patterned target layer, the first cleaning process including a first solution. The method additionally includes performing a second cleaning process to remove the patterned etch mask and form an exposed patterned target layer, the second cleaning process including a second solution. The method also includes performing a third cleaning process on the exposed patterned target layer, and performing a fourth cleaning process on the exposed patterned target layer, the fourth cleaning process comprising the first solution.Type: GrantFiled: April 27, 2020Date of Patent: November 8, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chun-Han Chu, Nai-Chia Chen, Ping-Jung Huang, Tsung-Min Chuo, Jui-Ming Shih, Bi-Ming Yen
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Publication number: 20200259017Abstract: An embodiment method includes forming a patterned etch mask over a target layer and patterning the target layer using the patterned etch mask as a mask to form a patterned target layer. The method further includes performing a first cleaning process on the patterned etch mask and the patterned target layer, the first cleaning process including a first solution. The method additionally includes performing a second cleaning process to remove the patterned etch mask and form an exposed patterned target layer, the second cleaning process including a second solution. The method also includes performing a third cleaning process on the exposed patterned target layer, and performing a fourth cleaning process on the exposed patterned target layer, the fourth cleaning process comprising the first solution.Type: ApplicationFiled: April 27, 2020Publication date: August 13, 2020Inventors: Chun-Han Chu, Nai-Chia Chen, Ping-Jung Huang, Tsung-Min Chuo, Jui-Ming Shih, Bi-Ming Yen
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Patent number: 10636908Abstract: An embodiment method includes forming a patterned etch mask over a target layer and patterning the target layer using the patterned etch mask as a mask to form a patterned target layer. The method further includes performing a first cleaning process on the patterned etch mask and the patterned target layer, the first cleaning process including a first solution. The method additionally includes performing a second cleaning process to remove the patterned etch mask and form an exposed patterned target layer, the second cleaning process including a second solution. The method also includes performing a third cleaning process on the exposed patterned target layer, and performing a fourth cleaning process on the exposed patterned target layer, the fourth cleaning process comprising the first solution.Type: GrantFiled: November 30, 2018Date of Patent: April 28, 2020Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-Han Chu, Nai-Chia Chen, Ping-Jung Huang, Tsung-Min Chuo, Jui-Ming Shih, Bi-Ming Yen
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Patent number: 10553720Abstract: An embodiment method includes forming a patterned etch mask over a target layer and patterning the target layer using the patterned etch mask as a mask to form a patterned target layer. The method further includes performing a first cleaning process on the patterned etch mask and the patterned target layer, the first cleaning process including a first solution. The method additionally includes performing a second cleaning process to remove the patterned etch mask and form an exposed patterned target layer, the second cleaning process including a second solution. The method also includes performing a third cleaning process on the exposed patterned target layer, and performing a fourth cleaning process on the exposed patterned target layer, the fourth cleaning process comprising the first solution.Type: GrantFiled: October 27, 2017Date of Patent: February 4, 2020Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-Han Chu, Nai-Chia Chen, Jui-Ming Shih, Ping-Jung Huang, Tsung-Min Chuo, Bi-Ming Yen
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Publication number: 20190259636Abstract: A method includes rotating a wafer, dispensing a liquid from a center of the wafer to an edge of the wafer to control a temperature of the wafer, and etching an etch layer of the wafer with an etchant during or after dispensing the liquid. The liquid is dispensed through a nozzle.Type: ApplicationFiled: May 6, 2019Publication date: August 22, 2019Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Manish Kumar SINGH, Bo-Wei CHOU, Jui-Ming SHIH, Wen-Yu KU, Ping-Jung HUANG, Pi-Chun YU
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Patent number: 10283384Abstract: A method for etching an etch layer formed on a front side of a wafer and a wafer etching apparatus are provided. The wafer etching apparatus includes a first flow channel, a temperature-regulating module, and a second flow channel. The first flow channel is configured to carry a preheated/precooled liquid for controlling a temperature of a wafer. The temperature-regulating module is coupled to the first flow channel. The temperature-regulating module is configured to control a temperature of the liquid in the first flow channel. The second flow channel is configured to carry an etchant for etching an etch layer formed on a front side of the wafer. The method includes: controlling the temperature of the wafer by using the preheated/precooled liquid; and etching the etch layer with the etchant.Type: GrantFiled: April 27, 2015Date of Patent: May 7, 2019Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Manish Kumar Singh, Bo-Wei Chou, Jui-Ming Shih, Wen-Yu Ku, Ping-Jung Huang, Pi-Chun Yu
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Publication number: 20190097052Abstract: An embodiment method includes forming a patterned etch mask over a target layer and patterning the target layer using the patterned etch mask as a mask to form a patterned target layer. The method further includes performing a first cleaning process on the patterned etch mask and the patterned target layer, the first cleaning process including a first solution. The method additionally includes performing a second cleaning process to remove the patterned etch mask and form an exposed patterned target layer, the second cleaning process including a second solution. The method also includes performing a third cleaning process on the exposed patterned target layer, and performing a fourth cleaning process on the exposed patterned target layer, the fourth cleaning process comprising the first solution.Type: ApplicationFiled: November 30, 2018Publication date: March 28, 2019Inventors: Chun-Han Chu, Nai-Chia Chen, Ping-Jung Huang, Tsung-Min Chuo, Jui-Ming Shih, Bi-Ming Yen
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Publication number: 20180151735Abstract: An embodiment method includes forming a patterned etch mask over a target layer and patterning the target layer using the patterned etch mask as a mask to form a patterned target layer. The method further includes performing a first cleaning process on the patterned etch mask and the patterned target layer, the first cleaning process including a first solution. The method additionally includes performing a second cleaning process to remove the patterned etch mask and form an exposed patterned target layer, the second cleaning process including a second solution. The method also includes performing a third cleaning process on the exposed patterned target layer, and performing a fourth cleaning process on the exposed patterned target layer, the fourth cleaning process comprising the first solution.Type: ApplicationFiled: October 27, 2017Publication date: May 31, 2018Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-Han Chu, Nai-Chia Chen, Jui-Ming Shih, Ping-Jung Huang, Tsung-Min Chuo, Bi-Ming Yen
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Publication number: 20160314994Abstract: A method for etching an etch layer formed on a front side of a wafer and a wafer etching apparatus are provided. The wafer etching apparatus includes a first flow channel, a temperature-regulating module, and a second flow channel. The first flow channel is configured to carry a preheated/precooled liquid for controlling a temperature of a wafer. The temperature-regulating module is coupled to the first flow channel. The temperature-regulating module is configured to control a temperature of the liquid in the first flow channel. The second flow channel is configured to carry an etchant for etching an etch layer formed on a front side of the wafer. The method includes: controlling the temperature of the wafer by using the preheated/precooled liquid; and etching the etch layer with the etchant.Type: ApplicationFiled: April 27, 2015Publication date: October 27, 2016Inventors: Manish Kumar SINGH, Bo-Wei CHOU, Jui-Ming SHIH, Wen-Yu KU, Ping-Jung HUANG, Pi-Chun YU