Abstract: A method of manufacturing a semiconductor device includes the following steps. A photoresist layer is formed over a material layer on a substrate. The photoresist layer has a composition including a solvent and a first photo-active compound dissolved in the solvent. The first photo-active compound is represented by the following formula (Al) or formula (A2): Zr12O8(OH)14(RCO2)18??Formula (A1); or Hf6O4(OH)6(RCO2)10??Formula (A2). R in the formula (A1) and R in the formula (A2) each include one of the following formulae (1) to (6): The photoresist layer is patterned. The material layer is etched using the photoresist layer as an etch mask.

Abstract: The present invention relates to the use of compounds of formula (I) and formula (II) and/or pharmaceutically acceptable salts of the aforementioned compounds in the treatment of meningioma and the reduction of the recurrence rate of meningioma. In formulas (I) and (II), R1 is C1-C20 alkyl, C3-C10 cycloalkyl, C6-C20 aryl, C1-C20 alkoxy, C6-C20 aryloxy, or halogen; p is 0 to 3; R2 is H, C1-C20 alkyl, or C6-C20 aryl; and R3 is H, C1-C20 alkyl, C3-C10 cycloalkyl, or C6-C20 aryl.

Abstract: The present disclosure provides devices and methods for obtaining images of body parts, implants, bones, and other areas of a patient that are involved in plastic or reconstructive surgery. A scanning device obtains an image of a body part of a patient to be replicated, sends it to a computer for review and/or manipulation, and the computer sends it to a printer or fabricator for reproduction. The scanning device, computer, and/or printer can be co-located, meaning that they are within the same facility. As an alternative to scanning the patient's body part, the computer of the present disclosure can obtain an image of the required body part from a stored set of anthropometric data on a database. The surgeon can modify the part produced from the anthropometric data as needed.

Abstract: A semiconductor device and its method of manufacture are provided. Embodiments forming an active region in a semiconductor substrate, wherein the active region is bounded by an isolation region; forming a first doped region within the active region; forming a gate electrode over the active region, wherein the gate electrode overlies a portion of the first doped region; forming at least one dielectric layer over sidewalls of the gate electrode; forming a pair of spacers on the dielectric layer; and forming a second doped region substantially within the portion of the first doped region adjacent the one of the spacers and spaced apart from the one of the spacers. The first and second doped regions may form a double diffused drain structure as in an HVMOS transistor.

Abstract: A semiconductor device and its method of manufacture are provided. Embodiments forming an active region in a semiconductor substrate, wherein the active region is bounded by an isolation region; forming a first doped region within the active region; forming a gate electrode over the active region, wherein the gate electrode overlies a portion of the first doped region; forming at least one dielectric layer over sidewalls of the gate electrode; forming a pair of spacers on the dielectric layer; and forming a second doped region substantially within the portion of the first doped region adjacent the one of the spacers and spaced apart from the one of the spacers. The first and second doped regions may form a double diffused drain structure as in an HVMOS transistor.

Abstract: A semiconductor device and its method of manufacture are provided. Embodiments include forming a first doped region and a second doped region. The first and second doped regions may form a double diffused drain structure as in an HVMOS transistor. A gate-side boundary of the first doped region underlies part of the gate electrode. The second doped region is formed within the first doped region adjacent the gate electrode. A gate-side boundary of the second doped region is separated from a closest edge of a gate electrode spacer by a first distance. An isolation region-side boundary of the second doped region is separated from a closest edge of a nearest isolation region by a second distance.

Abstract: A semiconductor device and its method of manufacture are provided. Embodiments include forming a first doped region and a second doped region. The first and second doped regions may form a double diffused drain structure as in an HVMOS transistor. A gate-side boundary of the first doped region underlies part of the gate electrode. The second doped region is formed within the first doped region adjacent the gate electrode. A gate-side boundary of the second doped region is separated from a closest edge of a gate electrode spacer by a first distance. An isolation region-side boundary of the second doped region is separated from a closest edge of a nearest isolation region by a second distance.