Patents by Inventor Jui-Wen Wang

Jui-Wen Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11984478
    Abstract: A method includes forming a first portion of a spacer layer over a first fin and a second portion of the spacer layer over a second fin, performing a first etching process to recess the first portion of the spacer layer with respect to the second portion of the spacer layer to form first spacers on sidewalls of the first fin, subsequently performing a second etching process to recess the second portion of the spacer layer with respect to the first spacers to form second spacers on sidewalls of the second fin, where the second spacers are formed to a height greater than that of the first spacers, and forming a first epitaxial source/drain feature and a second epitaxial source/drain feature between the first spacers and the second spacers, respectively, where the first epitaxial source/drain feature is larger than that of the second epitaxial source/drain feature.
    Type: Grant
    Filed: June 8, 2021
    Date of Patent: May 14, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shu Wen Wang, Chih-Teng Liao, Chih-Shan Chen, Jui Fu Hsieh, Dave Lo
  • Publication number: 20240154015
    Abstract: A method includes forming a first fin and a second fin protruding from a frontside of a substrate, forming a gate stack over the first and second fins, forming a dielectric feature dividing the gate stack into a first segment engaging the first fin and a second segment engaging the second fin, and growing a first epitaxial feature on the first fin and a second epitaxial feature on the second fin. The dielectric feature is disposed between the first and second epitaxial features. The method also includes performing an etching process on a backside of the substrate to form a backside trench, and forming a backside via in the backside trench. The backside trench exposes the dielectric feature and the first and second epitaxial features. The backside via straddles the dielectric feature and is in electrical connection with the first and second epitaxial features.
    Type: Application
    Filed: March 22, 2023
    Publication date: May 9, 2024
    Inventors: Jui-Lin CHEN, Hsin-Wen SU, Chih-Ching WANG, Chen-Ming LEE, Chung-I YANG, Yi-Feng TING, Jon-Hsu HO, Lien-Jung HUNG, Ping-Wei WANG
  • Patent number: 11968817
    Abstract: A semiconductor device includes a fin structure. A source/drain region is formed on the fin structure. A first gate structure is disposed over the fin structure. A source/drain contact is disposed over the source/drain region. The source/drain contact has a protruding segment that protrudes at least partially over the first gate structure. The source/drain contact electrically couples together the source/drain region and the first gate structure.
    Type: Grant
    Filed: February 28, 2022
    Date of Patent: April 23, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Jui-Lin Chen, Chao-Yuan Chang, Ping-Wei Wang, Fu-Kai Yang, Ting Fang, I-Wen Wu, Shih-Hao Lin
  • Patent number: 11942145
    Abstract: The present disclosure describes a method for memory cell placement. The method can include placing a memory cell region in a layout area and placing a well pick-up region and a first power supply routing region along a first side of the memory cell region. The method also includes placing a second power supply routing region and a bitline jumper routing region along a second side of the memory cell region, where the second side is on an opposite side to that of the first side. The method further includes placing a device region along the second side of the memory cell region, where the bitline jumper routing region is between the second power supply routing region and the device region.
    Type: Grant
    Filed: May 6, 2022
    Date of Patent: March 26, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chih-Chuan Yang, Jui-Wen Chang, Feng-Ming Chang, Kian-Long Lim, Kuo-Hsiu Hsu, Lien Jung Hung, Ping-Wei Wang
  • Publication number: 20240035970
    Abstract: A method and device for identifying the washing quality of a feather material are applied to a feather material washing apparatus and essentially entail: a sampling unit that takes an appropriate amount of the water discharged from the feather material washing apparatus as a water sample, an impurity removing module that removes feather fiber and impurities that may compromise inspection accuracy, and a laser sensing device that senses, while the water sample is static, a transparency value of a portion of the water sample that extends across a predetermined distance, in order to identify the washing quality of a washed feather material. The method and device for identifying the washing quality of a feather material exercise intelligent judgment to enable a consistent standard, to ensure the efficiency and quality of a feather material washing procedure, and to reduce the associated costs.
    Type: Application
    Filed: July 26, 2022
    Publication date: February 1, 2024
    Applicant: KWONG LUNG ENTERPRISE CO., LTD.
    Inventors: Jui-Wen WANG, Yuan-Fu LIN, Chun-Hao MIAO, Wei-Lun LAN, Che-Wei CHIEN
  • Patent number: 11669603
    Abstract: A clothing pattern making management system, applicable to a server and used for allowing users to connect and manage a plurality of clothing pattern making data via a network, at least including a database and a login and authority management module, a search and viewing module, a connection and upload module, and a management and download module. Through the data connection to a business system, the system is able to facilitate the users to perform data upload and management in order to achieve proper preservation and management of a large quantity of pattern drawings for various styles of clothes and for all stages, and to achieve the effects of learning exchange and passing on of techniques.
    Type: Grant
    Filed: June 8, 2020
    Date of Patent: June 6, 2023
    Assignee: KWONG LUNG ENTERPRISE CO., LTD.
    Inventors: Jui-Wen Wang, Chia-Hua Chang, Chun-Lung Ho
  • Publication number: 20220042368
    Abstract: An intelligent window allowing ventilation has an outer frame, a sliding frame, an upper locking rod, a lower locking rod, a driving module, a power supply module, and a switch assembly. The sliding frame is slidably mounted in the outer frame. The switch assembly controls the driving module to selectively drive the upper locking rod and the lower locking rod to two locking positions respectively, two ventilation positions respectively or two unlocking positions respectively. Since no handle is needed, an appearance of the intelligent window is neat and scenery outside the intelligent window would not be sheltered. In addition, by actuating the switch module to electrically drive the upper locking rod and the lower locking rod, a user is able to switch the intelligent window to a locked state, a ventilation state or a unlocked state. It is labor-saving and simple in operation.
    Type: Application
    Filed: February 18, 2021
    Publication date: February 10, 2022
    Inventor: Jui-Wen WANG
  • Publication number: 20210378339
    Abstract: A clothing pattern making management system, applicable to a server and used and used for allowing users to connect and manage a plurality of clothing pattern making data via a network, at least includes a database and a login and authority management module, a search and viewing module, a connection and upload module, a management and download module. Through the data connection to a business system, the system is able to facilitate the users to perform data upload and management in order to achieve proper preservation and management of large quantity of pattern drawings for various styles of clothes and for all stages, and to achieve the effects of learning exchange and passing on of techniques.
    Type: Application
    Filed: June 8, 2020
    Publication date: December 9, 2021
    Applicant: KWONG LUNG ENTERPRISE CO., LTD.
    Inventors: Jui-Wen WANG, Chia-Hua CHANG, Chun-Lung HO
  • Patent number: 9133655
    Abstract: A multistage lock has a stationary frame, an inner frame, an outer frame mounted between the stationary and inner frames, multiple stops mounted on the stationary and inner frames, two sliding panels mounted on the outer frame and a handle assembly connected to the sliding panels. Stopping protrusions of the stops selectively engage limiting protrusions on the sliding panels when the at least one handle is turned. Consequently, the inner and outer frames are selectively opened. The multistage lock has a simplified structure and allows people to decide whether a door panel (window) is open according to situations and weather outdoors.
    Type: Grant
    Filed: December 18, 2013
    Date of Patent: September 15, 2015
    Inventor: Jui-Wen Wang
  • Publication number: 20140102009
    Abstract: A multistage lock has a stationary frame, an inner frame, an outer frame mounted between the stationary and inner frames, multiple stops mounted on the stationary and inner frames, two sliding panels mounted on the outer frame and a handle assembly connected to the sliding panels. Stopping protrusions of the stops selectively engage limiting protrusions on the sliding panels when the at least one handle is turned. Consequently, the inner and outer frames are selectively opened. The multistage lock has a simplified structure and allows people to decide whether a door panel (window) is open according to situations and weather outdoors.
    Type: Application
    Filed: December 18, 2013
    Publication date: April 17, 2014
    Inventor: Jui-Wen WANG
  • Patent number: 8641102
    Abstract: A multistage lock has a stationary frame, an inner frame, an outer frame mounted between the stationary and inner frames, multiple stops mounted on the stationary and inner frames, two sliding panels mounted on the outer frame and a handle assembly connected to the sliding panels. Stopping protrusions of the stops selectively engage limiting protrusions on the sliding panels when the at least one handle is turned. Consequently, the inner and outer frames are selectively opened. The multistage lock has a simplified structure and allows people to decide whether a door panel (window) is open according to situations and weather outdoors.
    Type: Grant
    Filed: October 29, 2010
    Date of Patent: February 4, 2014
    Inventor: Jui-Wen Wang
  • Publication number: 20110248515
    Abstract: A multistage lock has a stationary frame, an inner frame, an outer frame mounted between the stationary and inner frames, multiple stops mounted on the stationary and inner frames, two sliding panels mounted on the outer frame and a handle assembly connected to the sliding panels. Stopping protrusions of the stops selectively engage limiting protrusions on the sliding panels when the at least one handle is turned. Consequently, the inner and outer frames are selectively opened. The multistage lock has a simplified structure and allows people to decide whether a door panel (window) is open according to situations and weather outdoors.
    Type: Application
    Filed: October 29, 2010
    Publication date: October 13, 2011
    Inventor: Jui-Wen Wang
  • Publication number: 20060091384
    Abstract: A substrate testing apparatus with full contact configuration. The apparatus includes a jig and a full-contact probe substrate. The jig has a conductive tape disposed thereon for fully electrically connecting a plurality of first connecting pads disposed on an upper surface of a substrate strip. The full-contact probe substrate has a contact surface and includes a plurality of conductive bumps and contact pads. The conductive bumps are disposed on the contact surface, and are used for individually probing a plurality of corresponding second connecting pads disposed on a lower surface of the substrate strip. The contact pads are electrically connected to the conductive bumps. The substrate strip is fully tested by means of the jig and the full-contact probe substrate.
    Type: Application
    Filed: October 17, 2005
    Publication date: May 4, 2006
    Applicant: Advanced Semiconductor Engineering, Inc.
    Inventors: Chung-Hsiung Ho, Jui-Wen Wang, Tien-Ming Shih, Kuang-Lin Lo