Abstract: An embodiment method includes: forming fins extending from a semiconductor substrate; depositing an inter-layer dielectric (ILD) layer on the fins; forming masking layers on the ILD layer; forming a cut mask on the masking layers, the cut mask including a first dielectric material, the cut mask having first openings exposing the masking layers, each of the first openings surrounded on all sides by the first dielectric material; forming a line mask on the cut mask and in the first openings, the line mask having slot openings, the slot openings exposing portions of the cut mask and portions of the masking layers, the slot openings being strips extending perpendicular to the fins; patterning the masking layers by etching the portions of the masking layers exposed by the first openings and the slot openings; and etching contact openings in the ILD layer using the patterned masking layers as an etching mask.

Abstract: An SRAM device and method of forming include pass gate (PG), pull-down (PD), and pull-up (PU) transistors. A first gate line of the PG and a second gate line of the PD and the PU extend in a first direction. A common source/drain of the PG, PD, and PU transistors interposes the first and second gate lines and another source/drain of the PG transistor. A first contact extends from the common source/drain and a second contact extends from the another source/drain. A third contact is disposed above the second contact with a first width in the first direction and a first length in a second direction, first length being greater than the first width.

Abstract: A display device includes a first display unit emitting a green light having a first output spectrum corresponding to a highest gray level of the display device and a second display unit emitting a blue light having a second output spectrum corresponding to the highest gray level of the display device. The first output spectrum has a main wave with a first peak. The second output spectrum has a main wave with a second peak and a sub wave with a sub peak. The second peak corresponds to a main wavelength, the sub peak corresponds to a sub wavelength, and the main wavelength is less than the sub wavelength. An intensity of the second peak is greater than an intensity of the sub peak and an intensity of the first peak.

Abstract: A semiconductor device includes a fin structure. A source/drain region is formed on the fin structure. A first gate structure is disposed over the fin structure. A source/drain contact is disposed over the source/drain region. The source/drain contact has a protruding segment that protrudes at least partially over the first gate structure. The source/drain contact electrically couples together the source/drain region and the first gate structure.

Abstract: A method of performing automatic tuning on a deep learning model includes: utilizing an instruction-based learned cost model to estimate a first type of operational performance metrics based on a tuned configuration of layer fusion and tensor tiling; utilizing statistical data gathered during a compilation process of the deep learning model to determine a second type of operational performance metrics based on the tuned configuration of layer fusion and tensor tiling; performing an auto-tuning process to obtain a plurality of optimal configurations based on the first type of operational performance metrics and the second type of operational performance metrics; and configure the deep learning model according to one of the plurality of optimal configurations.

Abstract: An electronic device includes a light emitting diode and a light converting layer disposed on the light emitting diode. The electronic device emits a green output light under an operation of a highest brightness. The green output light has an output spectrum. An intensity integral of the output spectrum from 380 nm to 489 nm is defined as a first intensity integral. An intensity integral of the output spectrum from 490 nm to 780 nm is defined as a second intensity integral. A ratio of the first intensity integral over the second intensity integral is defined as a first ratio, and the first ratio is greater than 0% and less than or equal to 7.5%.

Abstract: An electron microscope specimen includes a first electron-transport layer, a second electron-transport layer, a spacer layer, and a carrier layer. The second electron-transport layer has a first opening, a second opening, and a viewing area, wherein the viewing area is between the first opening and the second opening. The spacer layer is sandwiched between the first electron-transport layer and the second electron-transport layer, and the spacer layer has an accommodating space communicating with the first opening and the second opening. The carrier layer is disposed on the second electron-transport layer, and has a viewing window, a first injection hole, and a second injection hole, wherein the viewing window is substantially aligned with the viewing area and the accommodating space, and the first injection hole and the second injection hole respectively communicate with the first opening and the second opening.

Abstract: An electron microscope specimen includes a first electron-transport layer, a second electron-transport layer, a spacer layer, and a carrier layer. The second electron-transport layer has a first opening, a second opening, and a viewing area, wherein the viewing area is between the first opening and the second opening. The spacer layer is sandwiched between the first electron-transport layer and the second electron-transport layer, and the spacer layer has an accommodating space communicating with the first opening and the second opening. The carrier layer is disposed on the second electron-transport layer, and has a viewing window, a first injection hole, and a second injection hole, wherein the viewing window is substantially aligned with the viewing area and the accommodating space, and the first injection hole and the second injection hole respectively communicate with the first opening and the second opening.