Abstract: Methods of manufacturing memory devices having memory cells and corresponding selectors, and associated systems and devices, are disclosed herein. In one embodiment, a method of manufacturing a memory device includes (a) removing a protection layer formed over the memory cells and (b) forming a cap layer over the memory cells before forming a conductive via through the memory device. The cap layer is configured to protect the memory cells during operation and can comprise a resistive material. The protection layer can be more efficiently removed with improved process margin and less device health impact using a polishing process before the conductive via is formed, thus increasing the manufacturing margin of the memory device.

Abstract: Methods of manufacturing memory devices having memory cells and corresponding selectors, and associated systems and devices, are disclosed herein. In one embodiment, a method of manufacturing a memory device includes (a) removing a protection layer formed over the memory cells and (b) forming a cap layer over the memory cells before forming a conductive via through the memory device. The cap layer is configured to protect the memory cells during operation and can comprise a resistive material. The protection layer can be more efficiently removed with improved process margin and less device health impact using a polishing process before the conductive via is formed, thus increasing the manufacturing margin of the memory device.

Abstract: Methods of manufacturing memory devices having memory cells and corresponding selectors, and associated systems and devices, are disclosed herein. In one embodiment, a method of manufacturing a memory device includes (a) removing a protection layer formed over the memory cells and (b) forming a cap layer over the memory cells before forming a conductive via through the memory device. The cap layer is configured to protect the memory cells during operation and can comprise a resistive material. The protection layer can be more efficiently removed with improved process margin and less device health impact using a polishing process before the conductive via is formed, thus increasing the manufacturing margin of the memory device.

Abstract: Methods of manufacturing memory devices having memory cells and corresponding selectors, and associated systems and devices, are disclosed herein. In one embodiment, a method of manufacturing a memory device includes (a) removing a protection layer formed over the memory cells and (b) forming a cap layer over the memory cells before forming a conductive via through the memory device. The cap layer is configured to protect the memory cells during operation and can comprise a resistive material. The protection layer can be more efficiently removed with improved process margin and less device health impact using a polishing process before the conductive via is formed, thus increasing the manufacturing margin of the memory device.

Abstract: A method of creating biocompatible polymeric structures includes the steps of: providing a biocompatible polymer including a strained cycloalkyne end group; forming a polymeric structure from the biocompatible polymer such that the strained cycloalkyne end group remains on the biocompatible polymer; providing an azide tethered molecule; and, after forming the polymeric structure, reacting the azide tethered molecule with the cycloalkyne in an azide alkyne cycloaddition reaction to further functionalize the polymeric structure.

Abstract: A method of creating biocompatible polymeric structures includes the steps of: providing a biocompatible polymer including a strained cycloalkyne end group; forming a polymeric structure from the biocompatible polymer such that the strained cycloalkyne end group remains on the biocompatible polymer; providing an azide tethered molecule; and, after forming the polymeric structure, reacting the azide tethered molecule with the cycloalkyne in an azide alkyne cycloaddition reaction to further functionalize the polymeric structure.