Abstract: A structured light projector for generating a far-field image of light dots in a defined pattern is proposed, where the structured light projector includes a light source providing as an output a non-collimated light beam and a specialized diffractive optical element disposed to intercept the non-collimated light beam. The specialized diffractive optical element is formed to exhibit a non-uniform pattern of grating features configured to compensate for the non-planar wavefront and phase retardation of the non-collimated output beam, providing as an output of the projector an interference pattern of light dots exhibiting the desired configuration.

Abstract: The illumination module for emitting light (5) can operate in at least two different modes, wherein in each of the modes, the emitted light (5) has a different light distribution. The module has a mode selector (10) for selecting the mode in which the module operates, and it has an optical arrangement. The arrangement includes—a microlens array (LL1) with a multitude of transmissive or reflective microlenses (2) which are regularly arranged at a lens pitch P (P1);—an illuminating unit for illuminating the microlens array (LL1). The illuminating unit includes a first array of light sources (S1) operable to emit light of a first wavelength L1 each and having an aperture each. The apertures are located in a common emission plane which is located at a distance D (D1) from the microlens array (LL1). In a first one of the modes, for the lens pitch P, the distance D and the wavelength L1 applies P2=2·L1·D/N wherein N is an integer with N?1.

Abstract: An optoelectronic module includes a spacer with an optical component mounting surface, a fluid permeable channel, and a module mounting surface. The fluid permeable channel and module mounting surface allow the channels to be sealed to foreign matter during certain manufacturing steps and to remain free from blockages, such as solidified flux, during certain manufacturing steps. Further, the channels can permit heat to escape from the optoelectronic module during operation.

Abstract: An optoelectronic module includes a spacer with an optical component mounting surface, a fluid permeable channel, and a module mounting surface. The fluid permeable channel and module mounting surface allow the channels to be sealed to foreign matter during certain manufacturing steps and to remain free from blockages, such as solidified flux, during certain manufacturing steps. Further, the channels can permit heat to escape from the optoelectronic module during operation.

Abstract: A structured light projector for generating a far-field image of light dots in a defined pattern is proposed, where the structured light projector includes a light source providing as an output a non-collimated light beam and a specialized diffractive optical element disposed to intercept the non-collimated light beam. The specialized diffractive optical element is formed to exhibit a non-uniform pattern of grating features configured to compensate for the non-planar wavefront and phase retardation of the non-collimated output beam, providing as an output of the projector an interference pattern of light dots exhibiting the desired configuration.

Abstract: An apparatus for producing structured light comprises a first optical arrangement which comprises a microlens array (L1) comprising a multitude of transmissive or reflective microlenses (2) which are regularly arranged at a lens pitch P and an illumination unit for illuminating the microlens array. The illumination unit comprises an array (S1) of light sources (1) for emitting light of a wavelength L each and having an aperture each, wherein the apertures are located in a common emission plane which is located at a distance D from the microlens array. For the lens pitch P, the distance D and the wavelength L, the following equation applies P2=2LD/N, wherein N is an integer with N?1. High-contrast high-intensity light patterns can be produced. Devices comprising such apparatuses can be used for depth mapping.

Abstract: The illumination module for emitting light (5) can operate in at least two different modes, wherein in each of the modes, the emitted light (5) has a different light distribution. The module has a mode selector (10) for selecting the mode in which the module operates, and it has an optical arrangement. The arrangement includes—a microlens array (LL1) with a multitude of transmissive or reflective microlenses (2) which are regularly arranged at a lens pitch P (P1);—an illuminating unit for illuminating the microlens array (LL1). The illuminating unit includes a first array of light sources (S1) operable to emit light of a first wavelength L1 each and having an aperture each. The apertures are located in a common emission plane which is located at a distance D (D1) from the microlens array (LL1). In a first one of the modes, for the lens pitch P, the distance D and the wavelength L1 applies P2=2·L1·D/N wherein N is an integer with N?1.

Abstract: An apparatus for producing structured light comprises a first optical arrangement which comprises a microlens array (L1) comprising a multitude of transmissive or reflective microlenses (2) which are regularly arranged at a lens pitch P and an illumination unit for illuminating the microlens array. The illumination unit comprises an array (S1) of light sources (1) for emitting light of a wavelength L each and having an aperture each, wherein the apertures are located in a common emission plane which is located at a distance D from the microlens array. For the lens pitch P, the distance D and the wavelength L, the following equation applies P2=2LD/N, wherein N is an integer with N?1. High-contrast high-intensity light patterns can be produced. Devices comprising such apparatuses can be used for depth mapping.

Abstract: A high power laser source comprises a bar of laser diodes having a first coefficient of thermal expansion CTEbar on a submount having a second coefficient CTEsub and a cooler having a third coefficient CTEcool. The submount/cooler assembly shows an effective fourth coefficient CTEeff differing from CTEbar. This difference leads to a deformation of the crystal lattice of the lasers' active regions by mechanical stress. CTEeff is selected to be either lower than both CTEbar and CTEcool or is selected to be between CTEbar and CTEcool. The submount may either comprise layers of materials having different CTEs, e.g., a Cu layer of 10-40 ?m thickness and a Mo layer of 100-400 ?m thickness, or a single material with a varying CTEsub. Both result in a CTEsub varying across the submount's thickness.

Abstract: A high power laser source comprises a bar of laser diodes having a first coefficient of thermal expansion CTEbar on a submount having a second coefficient CTEsub and a cooler having a third coefficient CTEcool. The submount/cooler assembly shows an effective fourth coefficient CTEeff differing from CTEbar. This difference leads to a deformation of the crystal lattice of the lasers' active regions by mechanical stress. CTEeff is selected to be either lower than both CTEbar and CTEcool or is selected to be between CTEbar and CTEcool. The submount may either comprise layers of materials having different CTEs, e.g., a Cu layer of 10-40 ?m thickness and a Mo layer of 100-400 ?m thickness, or a single material with a varying CTEsub. Both result in a CTEsub varying across the submount's thickness.

Abstract: A high power laser source comprises at least a bar of laser diodes with a first coefficient of thermal expansion (CTEbar), a submount onto which said laser bar is affixed with a second coefficient of thermal expansion (CTEsub), and a cooler onto which said submount is affixed with a third coefficient of thermal expansion (CTEcool). The submount/cooling assembly exhibits an effective fourth coefficient of expansion (CTEeff). According to the invention, mechanical stress exerted to the laser bar improves reliability and optical performance. To effect this, CTEeff must differ from CTEbar, CTEeff?CTEbar. Preferably, CTEeff should differ by a predetermined amount from CTEbar. The difference is achieved in two ways: either by selecting CTEsub>CTEbar and CTEsub?CTEcool, or by selecting CTEsub<CTEbar and CTEsub<CTEcool. Thereby, all coefficients must be selected such that CTEeff differs from CTEbar: CTEeff?CTEbar, preferably by a percentage of 5% or by a predetermined amount of +/?3-4×10?7K?1.

Abstract: A vertical cavity apparatus includes first and second mirrors, a substrate and at least first and second active regions positioned between the first and second mirrors. At least one of the first and second mirrors is a fiber with a grating. At least a first tunnel junction is positioned between the first and second mirrors.

Abstract: A vertical cavity apparatus includes first and second mirrors, a substrate, first and second active regions and a plurality of individual active regions. Each of an individual active region is positioned between the first and second active regions. A first oxide layer is positioned between the first mirror and the second mirror. A plurality of tunnel junctions are positioned between the first and second mirrors.

Abstract: A vertical cavity apparatus includes first and second mirrors, a substrate and at least first and second active regions positioned between the first and second mirrors. At least one of the first and second mirrors is a fused mirror. At least a first tunnel junction is positioned between the first and second mirrors.

Abstract: A vertical cavity apparatus includes a first mirror, a substrate and a second mirror coupled to the substrate. At least a first and a second active region are each positioned between the first and second mirrors. At least a first oxide layer is positioned between the first and second mirrors. At least a first tunnel junction is positioned between the first and second mirrors.

Abstract: A vertical cavity apparatus includes first and second mirrors, a substrate and at least first and second active regions positioned between the first and second mirrors. A first etched layer is positioned between the first and second mirrors. A first tunnel junction is positioned between the first and second mirrors.

Abstract: A vertical cavity apparatus includes first and second mirrors, a substrate and at least first and second active regions positioned between the first and second mirrors. At least one of the first and second mirrors is a lattice relaxed mirror. At least a first tunnel junction is positioned between the first and second mirrors.

Abstract: A vertical cavity apparatus includes first and second mirrors, a substrate and at least first and second active regions positioned between the first and second mirrors. At least one of the first and second mirrors is a dielectric mirror. At least a first tunnel junction is positioned between the first and second mirrors.

Abstract: A vertical cavity apparatus includes a first mirror, a substrate and a second mirror coupled to the substrate. At least a first and a second active region are each positioned between the first and second mirrors. At least a first ion implantation layer is positioned between the first and second mirrors. At least a first tunnel junction is positioned between the first and second mirrors.

Abstract: Two semiconductor layers of the laser form a tunnel junction enabling an electrical current for pumping the laser to pass from an N doped semiconductor Bragg mirror to a P doped injection layer belonging to the light-amplifying structure. The Bragg mirror co-operates with another mirror of the same type having the same doping to include said structure in an optical cavity of the laser. In a variant, the tunnel junction may be buried and located so as to constitute confinement means for said pumping current. The laser can be used in an optical fiber communications network.