Patents by Inventor Julien Michelot
Julien Michelot has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 9099366Abstract: A photosite is formed in a semiconductor substrate and includes a photodiode confined in a direction orthogonal to the surface of the substrate. The photodiode includes a semiconductor zone for storing charge that is formed in an upper semiconductor region having a first conductivity type and includes a main well of a second conductivity type opposite the first conductivity type and laterally pinned in a first direction parallel to the surface of the substrate. The photodiode further includes an additional semiconductor zone including an additional well having the second conductivity type that is buried under and makes contact with the main well.Type: GrantFiled: June 21, 2012Date of Patent: August 4, 2015Assignees: STMicroelectronics SA, STMicroelectronics (Crolles 2) SASInventors: Francois Roy, Julien Michelot
-
Patent number: 9099604Abstract: A method for manufacturing an image sensor, including the successive steps of: forming columns of a semiconductor material; forming one or several pixels at a first end of each of the columns; and deforming the structure so that the second ends of each of the columns come closer to each other or draw away from each other to form a surface in the shape of a polyhedral cap.Type: GrantFiled: April 8, 2013Date of Patent: August 4, 2015Assignees: STMicroelectronics (Crolles 2) SAS, STMicroelectronics S.A.Inventors: François Roy, Lucile Broussous, Julien Michelot, Jean-Pierre Oddou
-
Publication number: 20150021668Abstract: An image sensor cell formed inside and on top of a substrate of a first conductivity type includes: a storage region of the second conductivity type; a read region of the second conductivity type; a transfer region located between the storage region and the read region; and a transfer gate topping the transfer region and which does not or does not totally top the storage region. The transfer region comprises a first area of the first conductivity type in the vicinity of the storage region, and a second area of the second conductivity type extending between the first area and the read region.Type: ApplicationFiled: July 18, 2014Publication date: January 22, 2015Inventors: Francois Roy, Julien Michelot, Pascale Mazoyer
-
Patent number: 8803057Abstract: A method of resetting a photosite is disclosed. Photogenerated charges accumulated in the photosite are reset by recombining the photogenerated charges with charges of opposite polarity.Type: GrantFiled: July 18, 2011Date of Patent: August 12, 2014Assignees: STMicroelectronics (Crolles 2) SAS, STMicroelectronics SAInventors: François Roy, Julien Michelot
-
Patent number: 8791512Abstract: An imaging device is formed in a semiconductor substrate. The device includes a matrix array of photosites. Each photosite is formed of a semiconductor region for storing charge, a semiconductor region for reading charge specific to said photosite, and a charge transfer circuit configured so as to permit a transfer of charge between the charge storage region and the charge reading region. Each photosite further includes at least one buried first electrode. At least one part of that buried first electrode bounds at least one part of the charge storage region. The charge transfer circuit for each photosite includes at least one second buried electrode.Type: GrantFiled: September 23, 2011Date of Patent: July 29, 2014Assignees: STMicroelectronics (Crolles 2) SAS, STMicroelectronics SAInventors: Francois Roy, Julien Michelot
-
Patent number: 8686483Abstract: A photosite may include, in a semi-conductor substrate, a photodiode pinched in the direction of the depth of the substrate including a charge storage zone, and a charge transfer transistor to transfer the stored charge. The charge storage zone may include a pinching in a first direction passing through the charge transfer transistor defining a constriction zone adjacent to the charge transfer transistor.Type: GrantFiled: February 16, 2012Date of Patent: April 1, 2014Assignees: STMicroelectronics SA, STMicroelectronics (Crolles 2) SASInventors: Julien Michelot, Francois Roy, Frederic Lalanne
-
Patent number: 8674283Abstract: A method of fabricating an image sensor includes the steps of: forming at least two photosites in a semiconductor substrate; forming a trench between the photosites; forming a thin liner on at least the sidewalls of the trench; depositing a conductive material having a first refractive index in the trench; and forming a region surrounded by the conductive material and having a second refractive index lower than the first index of refraction within the conductive material in the trench.Type: GrantFiled: December 21, 2011Date of Patent: March 18, 2014Assignees: STMicroelectronics (Crolles 2) SAS, STMicroelectronics SAInventors: Francois Roy, Flavien Hirigoyen, Julien Michelot
-
Patent number: 8664578Abstract: An image sensor having a semiconductor substrate, at least two photosites in the substrate and an isolation region between the photosites. The isolation region has a first trench covered by a thin electrically insulating liner and filled with an electrically conductive material, the conductive material has a second trench at least partially filled with an optically isolating material.Type: GrantFiled: December 21, 2011Date of Patent: March 4, 2014Assignee: STMicroelectronics SAInventors: Flavien Hirigoyen, Julien Michelot
-
Publication number: 20130049155Abstract: A photosite is formed in a semiconductor substrate and includes a photodiode confined in a direction orthogonal to the surface of the substrate. The photodiode includes a semiconductor zone for storing charge that is formed in an upper semiconductor region having a first conductivity type and includes a main well of a second conductivity type opposite the first conductivity type and laterally pinned in a first direction parallel to the surface of the substrate. The photodiode further includes an additional semiconductor zone including an additional well having the second conductivity type that is buried under and makes contact with the main well.Type: ApplicationFiled: June 21, 2012Publication date: February 28, 2013Applicants: STMICROELECTRONICS (CROLLES 2) SAS, STMICROELECTRONICS S.A.Inventors: Francois Roy, Julien Michelot
-
Publication number: 20120211804Abstract: A photosite may include, in a semi-conductor substrate, a photodiode pinched in the direction of the depth of the substrate including a charge storage zone, and a charge transfer transistor to transfer the stored charge. The charge storage zone may include a pinching in a first direction passing through the charge transfer transistor defining a constriction zone adjacent to the charge transfer transistor.Type: ApplicationFiled: February 16, 2012Publication date: August 23, 2012Applicants: STMicroelectronics (Crolles 2) SAS, STMicroelectronics SAInventors: Julien MICHELOT, Francois Roy, Frederic Lalanne
-
Publication number: 20120161213Abstract: An imaging device is formed in a semiconductor substrate. The device includes a matrix array of photosites. Each photosite is formed of a semiconductor region for storing charge, a semiconductor region for reading charge specific to said photosite, and a charge transfer circuit configured so as to permit a transfer of charge between the charge storage region and the charge reading region. Each photosite further includes at least one buried first electrode. At least one part of that buried first electrode bounds at least one part of the charge storage region. The charge transfer circuit for each photosite includes at least one second buried electrode.Type: ApplicationFiled: September 23, 2011Publication date: June 28, 2012Applicant: STMICROELECTRONICS (CROLLES 2) SASInventors: Francois Roy, Julien Michelot
-
Publication number: 20120153128Abstract: A method of fabricating an image sensor includes the steps of: forming at least two photosites in a semiconductor substrate; forming a trench between the photosites; forming a thin liner on at least the sidewalls of the trench; depositing a conductive material having a first refractive index in the trench; and forming a region surrounded by the conductive material and having a second refractive index lower than the first index of refraction within the conductive material in the trench.Type: ApplicationFiled: December 21, 2011Publication date: June 21, 2012Applicants: STMICROELECTRONICS SA, STMICROELECTRONICS (CROLLES 2) SASInventors: Francois Roy, Flavien Hirigoyen, Julien Michelot
-
Publication number: 20120153127Abstract: An image sensor having a semiconductor substrate, at least two photosites in the substrate and an isolation region between the photosites. The isolation region has a first trench covered by a thin electrically insulating liner and filled with an electrically conductive material, the conductive material has a second trench at least partially filled with an optically isolating material.Type: ApplicationFiled: December 21, 2011Publication date: June 21, 2012Applicant: STMICROELECTRONICS SAInventors: Flavien Hirigoyen, Julien Michelot
-
Publication number: 20120018619Abstract: A method of resetting a photosite is disclosed. Photogenerated charges accumulated in the photosite are reset by recombining the photogenerated charges with charges of opposite polarity.Type: ApplicationFiled: July 18, 2011Publication date: January 26, 2012Applicants: STMicroelectronics SA, STMicroelectronics (Crolles 2) SASInventors: François Roy, Julien Michelot