Abstract: A method for detecting photolithographic hotspots is disclosed. After receiving layout data, an aerial image simulation is conducted to extract aerial image intensity indices. Based on the combination of one or more aerial image intensity indices, various aerial image detectors are generated. The value of aerial image detectors is verified to determine the position and type of the photolithographic hotspots.

Abstract: A method for detecting photolithographic hotspots is disclosed. After receiving layout data, an aerial image simulation is conducted to extract aerial image intensity indices. Based on the combination of one or more aerial image intensity indices, various aerial image detectors are generated. The value of aerial image detectors is verified to determine the position and type of the photolithographic hotspots.

Abstract: A half-tone phase shift mask including at least a mask substrate, a half-tone phase shift layer and a sheltering layer. The half-tone phase shift layer is a strip-like profile that forms on the surface of the mask substrate. The sheltering layer is formed on the two ends of the half-tone phase shift layer so that a portion of the half-tone phase shift layer is exposed. The sheltering layer has a width greater than the half-tone phase shift layer.

Abstract: A method of forming a plurality of isolated and closed patterns arranged in an array in a photoresist layer. A phase shift mask is provided. A plurality of first phase shift transparent regions, a plurality of second phase shift transparent regions, and a non-phase shift region are included on the phase shift mask. The first phase shift transparent regions and the second phase shift transparent regions are regularly interlaced in an array. Each of the first phase shift transparent regions and each of the second phase shift transparent regions are separated by the non-phase shift region. An exposure process is perform to form the closed patterns corresponding to the first phase shift transparent regions and the second phase shift transparent regions in the photoresist layer.

Abstract: A method of forming a plurality of isolated and closed patterns arranged in an array in a photoresist layer. A phase shift mask is provided. A plurality of first phase shift transparent regions, a plurality of second phase shift transparent regions, and a non-phase shift region are included on the phase shift mask. The first phase shift transparent regions and the second phase shift transparent regions are regularly interlaced in an array. Each of the first phase shift transparent regions and each of the second phase shift transparent regions are separated by the non-phase shift region. An exposure process is perform to form the closed patterns corresponding to the first phase shift transparent regions and the second phase shift transparent regions in the photoresist layer.

Abstract: A half-tone phase shift mask including at least a mask substrate, a half-tone phase shift layer and a sheltering layer. The half-tone phase shift layer is a strip-like profile that forms on the surface of the mask substrate. The sheltering layer is formed on the two ends of the half-tone phase shift layer so that a portion of the half-tone phase shift layer is exposed. The sheltering layer has a width greater than the half-tone phase shift layer.

Abstract: A method and system for analyzing the stepping of a reticle mask. A reticle mask includes a first and second corner mask for blocking exposure of a first rectangular area on the wafer surface, a third corner mask for blocking exposure of a second rectangular area on the wafer surface, wherein the first rectangular area is larger than the second rectangular area, and a fourth corner mask of the reticle mask for allowing exposure of a third rectangular area that is smaller than the second rectangular area. A metrology machine produces alignment adjustment values of the result of stepping the reticle mask over the wafer's surface according to reticle mask overlapped exposed corners. The alignment adjustment values comprise an x and y value, and a rotation value. The alignment adjustment values are determined from the difference between the centers of the overlapping results of the third and fourth corner mask.

Abstract: A multi-exposure process. By performing the multi-exposure process, the size of the line width can be enlarged or shrunk by the precondition of the fixed pitch. Moreover, the line width can be shrunk to a level even smaller than the resolving power of the stepper or the scanner. Additionally, by using the invention, the exposure energy, the exposure time and the exposure DOF can be fixed while the exposure process is performed. Therefore, the process window is increased and the yield is enhanced. Furthermore, the processing sequence according to the invention is simpler than the conventional photolithography processing sequence, so that the throughput can be increased.