Abstract: A lubricating oil composition containing a base oil (A), a molybdenum-based friction modifier (B), a metal-based detergent (C), and a dispersant (D), in which the dispersant (D) contains a non-boron-modified polyisobutenyl succinic bisimide (D1). The IR spectrum of the non-boron-modified polyisobutenyl succinic bisimide (D1) is determined by an FT-IR method, having a ratio [Abs (1705 cm?1)/Abs (1390 cm?1)] of a peak intensity Abs (1705 cm?1) at 1705 cm?1 to a peak intensity Abs (1390 cm?1) at 1390 cm?1 is 7.5 or less. A content of the non-boron-modified polyisobutenyl succinic bisimide (D1) is 50 mass % or more based on a total amount of the dispersant (D), and contains a kinematic viscosity at 100° C. is 9.3 mm2/s or less. The lubricating oil composition has an excellent effect of reducing a friction coefficient while containing a molybdenum-based friction modifier and a succinimide compound.

Abstract: A crucible for growing a single-crystal in which a raw material melt for growing the single-crystal is solidified while being accommodated includes a side wall part configured to surround the raw material melt and a bottom part configured to support the raw material melt while being continuous with the side wall part, in which the side wall part has circumferential length redundancy inside the side wall part in a cross-sectional view. The side wall part has a portion where the circumference length is redundant inside any portion in the cross-sectional view, and when the crucible for growing a single-crystal is cooled in a cooling process after the single-crystal growth, the portion where the circumference length is redundant inside in the cross-sectional view is expanded to an outside of the crucible for growing a single-crystal.

Abstract: A vibration device includes: a glass vibration plate including a plurality of glass plates being laminated, and a solid-phase intermediate layer between at least a pair of the glass plates among the glass plates; a vibrator fixed to the glass vibration plate and configured to vibrate the glass vibration plate, in which the glass vibration plate includes a temperature adjustment unit configured to adjust a temperature of the intermediate layer.

Abstract: A plated steel sheet for hot stamping according to one aspect of the present invention includes a steel sheet, a plating layer formed on either surface or both surfaces of the steel sheet and having an Al content of 60 mass % or more, and a surface film layer formed on the plating layer. A thickness t of the plating layer is 10 to 60 ?m. An average crystal grain diameter of the plating layer in a thickness range from an interface between the plating layer and the surface film layer to a position at ? of the thickness t is 2t/3 or less and 15.0 ?m or less. A surface film layer contains particles containing one or more elements selected from A group elements consisting of Sc, V, Mn, Fe, Co, Ce, Nb, Mo, and W. A total content of the A group elements is 0.01 to 10.0 g/m2. An average grain diameter of the particles containing the A group elements is 0.05 to 3.0 ?m.

Abstract: An object is to provide technology that enables cost reduction or downsizing of semiconductor packages. The wiring element includes a second substrate, a plurality of first relay pads arranged on a surface of the second substrate opposite to the conductor substrate and connected to each of the control pads of the plurality of semiconductor elements by wires, a plurality of second relay pads arranged on the surface of the second substrate opposite to the conductor substrate, the number thereof being equal to or lower than the number of the plurality of first relay pads, and a plurality of wiring portions arranged on the surface of the second substrate opposite to the conductor substrate and selectively connecting the plurality of first relay pads and the plurality of second relay pads.

Abstract: To prevent dielectric breakdown of a Schottky barrier diode using gallium oxide. A Schottky barrier diode has a drift layer provided on a semiconductor substrate, an anode electrode, and a cathode electrode. A width W1 of an outer peripheral trench formed in the drift layer is larger than a width W2 of a center trench. An outer peripheral wall S1 of the outer peripheral trench is curved so as to approach vertical toward the outside, while an inner peripheral wall S2 thereof is closer to vertical than the outer peripheral wall S1. This relaxes an electric field which occurs at the outer peripheral bottom portion of the outer peripheral trench upon application of a backward voltage.

Abstract: A power semiconductor module includes a circuit substrate, a power semiconductor device including a semiconductor substrate, and at least one bonding portion. The at least one bonding portion includes a first metal member distal to the semiconductor substrate, a second metal member proximal to the semiconductor substrate, and a bonding layer that bonds the first metal member and the second metal member to each other. At an identical temperature, 0.2% offset yield strength of the first metal member is smaller than the 0.2% offset yield strength of the second metal member and is smaller than shear strength of the bonding layer.

Abstract: An object is to provide technology that enables cost reduction or downsizing of semiconductor packages. The wiring element includes a second substrate, a plurality of first relay pads arranged on a surface of the second substrate opposite to the conductor substrate and connected to each of the control pads of the plurality of semiconductor elements by wires, a plurality of second relay pads arranged on the surface of the second substrate opposite to the conductor substrate, the number thereof being equal to or lower than the number of the plurality of first relay pads, and a plurality of wiring portions arranged on the surfaceof the second substrate opposite to the conductor substrate and selectively connecting the plurality of first relay pads and the plurality of second relay pads.

Abstract: A semiconductor device includes a base plate, a substrate, a semiconductor element, a case, and a wiring terminal. The case is disposed on the base plate so as to cover the substrate and the semiconductor element. The wiring terminal is electrically connected to the semiconductor element. The case includes a first case unit and a second case unit that is separate from the first case unit. The wiring terminal includes a first wiring unit and a second wiring unit. The first wiring unit is disposed so as to protrude from an inside to an outside of the case, and is electrically connected to the semiconductor element. The second wiring unit is bent with respect to the first wiring unit and disposed outside the case. The first case unit and the second case unit are disposed so as to sandwich the first wiring unit.

Abstract: A radiant heat protection device, a radiant heat protection method, and a service vehicle include a radiant heat reflector (51) having a reflective surface (51a) that reflects radiant heat (H), a coolant retainer (52) disposed on a back surface (51b) of the reflective surface (51a) of the radiant heat reflector (51) and capable of retaining coolant (C), and a coolant feed device (53) configured to feed the coolant (C) to the coolant retainer (52).

Abstract: A semiconductor device includes a base plate, a substrate, a semiconductor element, a case, and a wiring terminal. The case is disposed on the base plate so as to cover the substrate and the semiconductor element. The wiring terminal is electrically connected to the semiconductor element. The case includes a first case unit and a second case unit that is separate from the first case unit. The wiring terminal includes a first wiring unit and a second wiring unit. The first wiring unit is disposed so as to protrude from an inside to an outside of the case, and is electrically connected to the semiconductor element. The second wiring unit is bent with respect to the first wiring unit and disposed outside the case. The first case unit and the second case unit are disposed so as to sandwich the first wiring unit.

Abstract: A power semiconductor module includes a circuit substrate, a power semiconductor device including a semiconductor substrate, and at least one bonding portion. The at least one bonding portion includes a first metal member distal to the semiconductor substrate, a second metal member proximal to the semiconductor substrate, and a bonding layer that bonds the first metal member and the second metal member to each other. At an identical temperature, 0.2% offset yield strength of the first metal member is smaller than the 0.2% offset yield strength of the second metal member and is smaller than shear strength of the bonding layer.

Abstract: Provided are curable adhesives, along with adhesive tapes, laminates, and laminated mirror buttons that include the curable adhesive. The curable adhesive includes a (meth)acrylate polymer, a curable oxetane compound, a polymer filler, and a photoinitiator for curable oxetane compounds. The curable adhesive, when cured, can provide excellent interfacial failure resistance.

Abstract: An aqueous adhesive composition in an embodiment of the present disclosure includes a particulate polymer containing a (meth)acrylate polymer and a chlorinated polyolefin.

Abstract: Provided is a semiconductor device free from chipping of a thin semiconductor element during transportation. The semiconductor device includes: a thin semiconductor element including a front-side electrode on the front side of the semiconductor element, and including a back-side electrode on the back side of the semiconductor element; a metallic member formed on at least one of the front-side electrode and the back-side electrode, the metallic member having a thickness equal to or greater than the thickness of the semiconductor element; and a resin member in contact with the lateral side of the metallic member and surrounding the periphery of the metallic member, with a part of the front side of the semiconductor element being exposed.

Abstract: An industrial machinery includes: a drive mechanism driving a control target that moves work or a tool; a motor; a first sensor detecting a position of the control target; a second sensor detecting a position of the motor; a current controller controlling a supply current to the motor; a servo controller outputting a torque instruction to the current controller; and a numerical controller calculating a processing force of the control target to the work based on position information on the control target acquired from the first sensor, position information on the motor acquired from the second sensor, and the torque instruction, the numerical controller determining that the tool is in failure if an absolute value of a first component of the processing force becomes equal to or larger than a first threshold value while processing the work, the first component having a frequency lower than a predetermined frequency.

Abstract: An object is to provide technology that enables cost reduction or downsizing of semiconductor packages. The wiring element includes a second substrate, a plurality of first relay pads arranged on a surface of the second substrate opposite to the conductor substrate and connected to each of the control pads of the plurality of semiconductor elements by wires, a plurality of second relay pads arranged on the surface of the second substrate opposite to the conductor substrate, the number thereof being equal to or lower than the number of the plurality of first relay pads, and a plurality of wiring portions arranged on the surfaceof the second substrate opposite to the conductor substrate and selectively connecting the plurality of first relay pads and the plurality of second relay pads.

Abstract: The invention provides a method for producing a substrate for supporting cells, including a humidification step of humidifying the periphery of a non-fluorine resin based substrate, and a UV irradiation step of irradiating the substrate with UV in an oxygen and/or ozone containing atmosphere during and/or after the humidification step. The invention also provides a substrate for supporting cells, which is a non-fluorine resin based substrate. The substrate has a cell supporting surface for supporting cells, containing a component capable of generating C7H5O+ molecules by beam irradiation of a time-of-flight secondary ion mass spectrometer, such that cells are supported on the cell-supporting surface.

Abstract: An object is to provide a technique capable of suppressing a corrosion of a first electrode and a second electrode. A semiconductor element includes a semiconductor substrate, an Al electrode, a polyimide member selectively disposed on the Al electrode, and an Ni electrode. The polyimide member includes a protruding part which protrudes in a plane direction of an upper surface of the Al electrode and which has a lower portion having contact with the Al electrode in a cross-sectional view, in at least part of a peripheral part of the polyimide member in a top view. The Ni electrode is disposed on the Al electrode and the protruding part.

Abstract: Provided is a semiconductor device free from chipping of a thin semiconductor element during transportation. The semiconductor device includes: a thin semiconductor element including a front-side electrode on the front side of the semiconductor element, and including a back-side electrode on the back side of the semiconductor element; a metallic member formed on at least one of the front-side electrode and the back-side electrode, the metallic member having a thickness equal to or greater than the thickness of the semiconductor element; and a resin member in contact with the lateral side of the metallic member and surrounding the periphery of the metallic member, with a part of the front side of the semiconductor element being exposed.