Abstract: The present invention provides a display device which can prevent the deterioration of a transparent conductive film attributed to a cell reaction without pushing up a cost of a film forming device. The display device includes a first conductive layer which is formed of a transparent conductive film containing indium oxide as a main component, a conductive background layer which is formed on the first conductive layer, a second conductive layer which is formed of a film containing Al as a main component on the background layer, and a third conductive layer which is formed of the same material as the second conductive layer on the second conductive layer. On an interface between the second conductive layer and the third conductive layer, positions of grain boundaries are arranged discontinuously. Further, the background layer is a film which contains any one of Mo, Ti and Ta as a main component. Still further, the third conductive layer is used as a reflective electrode.

Abstract: The present invention prevents the diffusion of an aluminum element into a polysilicon layer in a heating step when an aluminum-based conductive layer is used in a source/drain electrode which is in contact with low-temperature polysilicon whereby the occurrence of defective display can be obviated. An aluminum-based conductive layer is used in a source/drain electrode and a barrier layer made of molybdenum or a molybdenum alloy layer is formed between the aluminum-based conductive layer and a polysilicon layer. Further, a molybdenum oxide nitride film formed by the rapid heat treatment (rapid heat annealing) in a nitrogen atmosphere is formed over a surface of the molybdenum or the molybdenum alloy which constitutes the barrier layer.

Abstract: An endless belt transports a recording medium through image forming sections and transfers toner images from corresponding ones of the image forming sections onto the recording medium. The endless belt has a surface resistivity and a volume resistivity. The surface resistivity and the volume resistivity are related such that 0.3 ?(log ? s?log ? v)?1.3 where ? s is the surface resistivity in ?/? measured after a voltage of substantially 500 V is applied to the endless belt for ten seconds and ? v is the volume resistivity in ?·cm ten after a voltage of substantially 250 V is applied to the endless belt for ten seconds.

Abstract: The generation of a projecting intensity distribution in an irradiation laser beam used for forming a polycrystalline semiconductor film is prevented by irradiating the laser beam onto an amorphous semiconductor film to crystallize it while it is being scanned. A dog-ear removing filter for eliminating diffracted light that occurs at boundaries of lenses and acts as a cause of development of dog-ears in the light intensity distribution is disposed in an optical system to cause the light intensity distribution in the irradiation laser beam to be uniform. As a result, by removing the dog ear distributions, the necessity for making the light intensity distribution of the laser beam blur is eliminated, and, consequently, a distribution of high energy efficiency can be maintained and the throughput is improved.

Abstract: The present invention prevents the diffusion of an aluminum element into a polysilicon layer in a heating step when an aluminum-based conductive layer is used in a source/drain electrode which is in contact with low-temperature polysilicon whereby the occurrence of defective display can be obviated. An aluminum-based conductive layer is used in a source/drain electrode and a barrier layer made of molybdenum or a molybdenum alloy layer is formed between the aluminum-based conductive layer and a polysilicon layer. Further, a molybdenum oxide nitride film formed by the rapid heat treatment (rapid heat annealing) in a nitrogen atmosphere is formed over a surface of the molybdenum or the molybdenum alloy which constitutes the barrier layer.

Abstract: The average film thickness of an amorphous silicon film formed on a substrate is measured. Then, the amorphous silicon film is irradiated with a laser beam to form a polysilicon film. The grain size distribution of the polysilicon film is measured. An optimum value of energy density of laser beam irradiation is calculated on the basis of grain size values measured at two points A and B of the polysilicon film. Then, the average film thickness of a next amorphous silicon film is measured. A value of energy density of laser beam irradiation is calculated on the basis of the average film thickness of the next amorphous silicon film and the average film thickness of the previous amorphous silicon film. The value of energy density is fed back to a laser beam irradiation system.

Abstract: A surface roughness of a polycrystalline semiconductor film to be formed by a laser annealing method is reduced. A transmittance distribution filter is disposed at the optical system of a laser annealing apparatus. The transmittance distribution filter controls an irradiation light intensity distribution along a scanning direction of a substrate formed with an amorphous silicon semiconductor thin film to have a distribution having an energy part equal to or higher than a fine crystal threshold on a high energy light intensity side and an energy part for melting and combining only a surface layer. This transmittance distribution filter is applied to an excimer laser annealing method, a phase shift stripe method or an SLS method respectively using a general line beam to thereby reduce the height of protrusions on a polycrystalline surface.

Abstract: The present invention prevents the diffusion of an aluminum element into a polysilicon layer in a heating step when an aluminum-based conductive layer is used in a source/drain electrode which is in contact with low-temperature polysilicon whereby the occurrence of defective display can be obviated. An aluminum-based conductive layer is used in a source/drain electrode and a barrier layer made of molybdenum or a molybdenum alloy layer is formed between the aluminum-based conductive layer and a polysilicon layer. Further, a molybdenum oxide nitride film formed by the rapid heat treatment (rapid heat annealing) in a nitrogen atmosphere is formed over a surface of the molybdenum or the molybdenum alloy which constitutes the barrier layer.

Abstract: An image display device using transistors each having a polycrystalline semiconductor layer constructed so that drain and source regions are fully activated, and a manufacturing method thereof. The polycrystalline semiconductor layer is so provided that impurity concentrations are easy to control in LDD regions . The image display device further uses transistors having a gate electrode on an upper surface of the semiconductor layer with an insulating film therebetween, a drain region formed on one side of the gate electrode, and a source region formed on another side of the gate electrode. An activated P-type impurity is added to the area underlying the gate electrode, and an activated N-type impurity is added to the area excluding the area underlying the gate electrode.

Abstract: A glass-impregnated, fiber-reinforced ceramic comprises a ceramic matrix having open voids, inorganic fibers embedded in the ceramic matrix in a regular or irregular orientation, and a glass matrix filling up the open voids in the ceramic matrix. The glass-impregnated, fiber-reinforced ceramic is manufactured by a manufacturing method comprising the steps of forming a fiber-reinforced ceramic comprising the ceramic matrix having open voids, and inorganic fibers embedded in the ceramic matrix, impregnating the fiber-reinforced ceramic with a glass precursor solution containing a glass precursor to stop up the open voids of the ceramic matrix with the glass precursor solution, and subjecting the fiber-reinforced ceramic impregnated with the solution to a heat treatment.

Abstract: A glass-impregnated, fiber-reinforced ceramic comprises a ceramic matrix having open voids, inorganic fibers embedded in the ceramic matrix in a regular or irregular orientation, and a glass matrix filling up the open voids in the ceramic matrix. The glass-impregnated, fiber-reinforced ceramic is manufactured by a manufacturing method comprising the steps of forming a fiber-reinforced ceramic comprising the ceramic matrix having open voids, and inorganic fibers embedded in the ceramic matrix, impregnating the fiber-reinforced ceramic with a glass precursor solution containing a glass precursor to stop up the open voids of the ceramic matrix with the glass precursor solution, and subjecting the fiber-reinforced ceramic impregnated with the solution to a heat treatment.

Abstract: A glass-impregnated, fiber-reinforced ceramic comprises a ceramic matrix having open voids, inorganic fibers embedded in the ceramic matrix in a regular or irregular orientation, and a glass matrix filling up the open voids in the ceramic matrix. The glass-impregnated, fiber-reinforced ceramic is manufactured by a manufacturing method comprising the steps of forming a fiber-reinforced ceramic comprising the ceramic matrix having open voids, and inorganic fibers embedded in the ceramic matrix, impregnating the fiber-reinforced ceramic with a glass precursor solution containing a glass precursor to stop up the open voids of the ceramic matrix with the glass precursor solution, and subjecting the fiber-reinforced ceramic impregnated with the solution to a heat treatment.