Abstract: A semiconductor device includes a substrate including an active region including a central active region extending in a first direction and first to fourth extended active regions extending from an edge of the central active region in a second direction perpendicular to the first direction, and a device isolation layer defining the active region; and first to fourth gate structures on the active region and spaced apart from one another, wherein the central active region, the first to fourth extended active regions, and the first to fourth gate structures constitute first to fourth pass transistors, the first to fourth pass transistors share one drain region on the central active region, and the active region has an H shape in a plan view.

Abstract: An electronic device and method are disclosed. The electronic device includes a display an extended screen area that is exposed or stowed, according to a change in a state of the display of the electronic device, communication circuitry configured to transceive a signal to or using an angle-of-arrival (AOA) antenna disposed within the extended screen area, a memory, and a processor. The processor implements the method, including: determining a position of the electronic device relative to an external electronic device, using the communication circuitry, executing a sharing operation with the external electronic device, identifying whether the display of the electronic device is disposed in a first state or a second state, based on detecting that the display is disposed in the first state, perform a first positioning operation for the external electronic device, and displaying a sharing interface according to the first positioning operation on the display.

Abstract: A method of processing an image based on super-resolution includes: sequentially performing a plurality of computing operations on a low-resolution input image using a super-resolution convolutional neural network (SRCNN) to generate a residual image, performing an interpolation operation on the low-resolution input image to generate an interpolation image and adding the residual image to the interpolation image to generate a high-resolution image. The high-resolution output image has a resolution higher than that of the low-resolution input image. The SRCNN includes a plurality of computation layers for performing the plurality of computing operations. The plurality of computation layers include a plurality of convolutional layers, and a deconvolutional layer for post-up-sampling. The deconvolutional layer is a last computation layer among the plurality of computation layers.

Abstract: Disclosed is a method for repairing a null pointer exception performed by a computing device including a processor, which includes: obtaining an original program; and obtaining, by using a classification model, a patch program from the original program by repairing an error of the original program; and, in which the classification model may be trained in advance by using a null processing pattern dataset obtained from at least one program.

Abstract: Disclosed are a substrate processing apparatus and a substrate processing method that allow a chemical liquid to penetrate deeply into a gap between patterns of a substrate. The substrate processing apparatus includes a chamber having a processing space defined therein in which a substrate is processed; a chuck installed in the processing space and configured to support the substrate thereon; a chemical liquid supply formed on top of the chuck and configured to supply a chemical liquid droplet toward an upper surface of the substrate supported on the chuck; and a pressurizer formed on top of the chuck and configured to pressurize the chemical liquid droplet supplied on the upper surface of the substrate so that the pressed chemical liquid droplet fills a gap between patterns formed on the substrate.

Abstract: Disclosed are a substrate processing apparatus that allow a chemical liquid to penetrate deeply into a gap between patterns of a substrate. The substrate processing apparatus includes a housing having a processing space defined therein in which a substrate is processed; a substrate support installed in the processing space so as to be rotatable about a rotation axis and configured to support the substrate; a chemical liquid supply disposed on top of the substrate support and configured to spray a chemical liquid toward an upper surface of the substrate supported on the substrate support; and a controller configured to repeatedly apply a first rotation control signal and a second rotation control signal indicating different rotation speeds to the substrate support so as to generate an inertial behavior of the chemical liquid coated on the substrate.

Abstract: Provided is a substrate processing apparatus and substrate processing method capable of allowing a liquid chemical to penetrate deeply into patterns of a substrate, the substrate processing apparatus including a housing for forming a treatment space where a substrate is processed, a substrate supporter mounted in the treatment space to rotate about a rotational axis, and provided to support the substrate, a liquid chemical supplier provided above the substrate supporter to eject a liquid chemical toward an upper surface of the substrate supported by the substrate supporter, and an ejector provided at a side of the treatment space to eject a heat transfer medium with a temperature different from the temperature of the liquid chemical onto the substrate.

Abstract: A semiconductor device includes a substrate that includes an element separation film, an active region defined by the element separation film and arranged in a first direction, and a trench positioned across the active region and the element separation film, a bit line contact that is positioned within the trench and is connected to the active region, a bit line structure that is connected to the substrate through the bit line contact and that extends in a second direction different from the first direction across the active region, and a first contact spacer, a second contact spacer, and a third contact spacer within the trench and around the bit line contact, the first contact spacer being continuous within the trench, and each of the second contact spacer and the third contact spacer being separated into at least two discrete parts within the trench.

Abstract: A NAND flash device may include a peripheral circuit including a transistor, a substrate, and a device isolation region defining an active region of the substrate. The transistor may include a first gate structure on the active region. The transistor may include source and drain regions extending in a first direction in the active region on both sides of the first gate structure, which may include a first lightly-doped source and drain region adjacent to the first gate structure and a second lightly-doped source and drain region integrally connected thereto. The second lightly-doped source and drain region may be arranged farther from the first gate structure than the first lightly-doped source and drain region. The second lightly-doped source and drain region may have a smaller width in the second direction than a width of the first lightly-doped source and drain region in the second direction.

Abstract: Provided are a display apparatus including: a substrate; a pixel circuit disposed over the substrate and comprising a thin film transistor and a storage capacitor; an insulating layer covering the pixel circuit; a bridge electrode disposed over the insulating layer and electrically connected to the pixel circuit through a contact hole formed in the insulating layer; a pixel electrode disposed over the insulating layer and electrically connected to the bridge electrode; a pixel definition layer disposed over the pixel electrode and including an opening overlapping a portion of the pixel electrode; an opposite electrode over the pixel electrode; and an emission layer disposed between the pixel electrode and the opposite electrode, wherein the pixel electrode does not overlap the contact hole of the insulating layer in a plan view.

Abstract: A display device includes a substrate, a pixel electrode disposed on the substrate, a bank layer disposed on the pixel electrode, where the bank layer includes a first portion in which a pixel opening exposing at least a portion of the pixel electrode is defined, where the first portion includes a surface inclined by a first angle with respect to the pixel electrode, a second portion spaced apart from the first portion and including a first surface, a second surface disposed below the first surface to be spaced apart from the first surface, and a third surface connecting the first surface and the second surface to each other, and a third portion connecting the first portion and the second portion to each other.

Abstract: A nanorod light emitting device, a method of manufacturing the same, and a display apparatus including the nanorod light emitting device are provided. The nanorod light emitting device includes a first semiconductor layer doped with a first conductivity type, a light emitting layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the light emitting layer and doped with a second conductivity type that is electrically opposite to the first conductivity type, wherein a distance between a lower surface of the first semiconductor layer and an upper surface of the second semiconductor layer is in a range of about 2 ?m to about 10 ?m, wherein a difference between a diameter of the upper surface of the second semiconductor layer and the lower surface of the first semiconductor layer is 10% or less of a diameter of the upper surface of the second semiconductor layer.

Abstract: A micro light emitting display apparatus and a method of manufacturing the micro light emitting display apparatus are disclosed. The micro light emitting display apparatus includes a micro light emitting element, a driving transistor connected to the micro light emitting element, a switching transistor connected to the driving transistor, and a first opening is provided to expose a source region or a drain region of the switching transistor, and a gate electrode of the driving transistor is provided in the first opening and in contact with the source region or the drain region of the switching transistor.

Abstract: An electronic device and method are disclosed. The device implements the method, including: receiving an utterance using a microphone, obtaining an image using a camera, transmitting by communication circuitry the utterance and/or the image to a server, receiving from the server operational information based on the transmission, executing a task corresponding to the received operational information, wherein the operational information further causes display of a first screen including first objects at a first size, and a change of the first screen to a second screen, based on a user movement indicated in the first image, the second screen including second objects displayed at a second size different from the first size, and having a count different from a count of the first objects.

Abstract: An evaporator according to an exemplary embodiment includes: a column in which a plurality of packings are stacked; an upper inlet, a middle inlet, and a lower inlet provided in an upper portion, a middle portion, and a lower portion of the column, respectively; an upper outlet and a lower outlet provided in the upper portion and the lower portion of the column, respectively; a pump connected to the lower outlet; and a heater connected between the pump and the middle inlet.

Abstract: A single crystal semiconductor structure includes: an amorphous substrate; a single crystal semiconductor layer provided on the amorphous substrate; and a thin orienting film provided between the amorphous substrate and the single crystal semiconductor layer, wherein the thin orienting film is a single crystal thin film, and the thin orienting film has a non-zero thickness that is equal to or less than 10 times a critical thickness hc.

Abstract: According to various embodiments, an electronic device is provided and includes a housing, a support frame which is arranged in an internal space of the housing and has a first surface, a second surface facing a direction opposite to the first surface, and a through hole, a display supported by the first surface and arranged to be seen from outside through at least a part of the housing, and an optical sensor module arranged in the second surface to face the through hole.

Abstract: A display device includes a substrate, an emission layer provided on the substrate and a reflective layer provided on the emission layer. The emission layer has an emission region that emits light, the reflective layer has a first opening, the emission region overlaps the first opening in a direction perpendicular to an upper surface of the substrate and a first width of the emission region is smaller than a second width of the first opening.

Abstract: Provided is a display panel including a substrate, a pixel electrode on the substrate, a pixel-defining layer including an opening corresponding to a portion of the pixel electrode and in which a groove is defined around the pixel electrode, a color filter arranged to correspond to the opening of the pixel-defining layer, and a black matrix arranged to correspond to the pixel-defining layer.

Abstract: A display apparatus for minimizing image quality deterioration occurring due to external light includes a first pixel electrode arranged on a substrate, a pixel-defining layer arranged on the substrate, covering an edge of the first pixel electrode, and including a 1-1st pixel opening exposing a portion of the first pixel electrode, a spacer layer arranged on the pixel-defining layer and including a 2-1st pixel opening corresponding to the 1-1st pixel opening and exposing the portion of the first pixel electrode, and a first color filter layer arranged on the first pixel electrode and selectively transmitting light of a first wavelength range. In a plan view, a first length between an edge of the 1-1st pixel opening and an edge of the 2-1st pixel opening in a direction corresponds to the first wavelength range.