Abstract: An operating room allocation apparatus may be provided. The apparatus according to an embodiment of the present disclosure may include: an information obtaining unit configured to obtain information about patient's entry and exit times in each operating room; a first calculation unit configured to calculate a utilization rate of the operating room for each certain time period based on the patient's entry and exit times; and a second calculation unit configured to receive certain time information from a user and calculate an average utilization rate by time period in the received time information.

Abstract: A display panel includes an amorphous silicon gate driver in which a lower voltage than the gate-off voltage output from the gate driver is applied to an adjacent stage as a low voltage transmission signal.

Abstract: A heat storage body for a regenerative catalytic apparatus is provided, the heat storage body includes: a body unit including a ceramic sintered body containing aluminum oxide, silica, and magnesium oxide, the body unit having a plurality of channels connecting first and second surfaces, located opposite to each other. The heat storage body further including a protective film disposed on a surface of the body unit and inner surfaces of the plurality of channels. The protective film includes an oxide containing a first metal of aluminum and at least one second metal including at least one from among yttrium, zinc, zirconium, tungsten, zinc, and nickel.

Abstract: Provided herein are novel compounds, e.g., those of Formula (I), as GCN2 inhibitors. Also provided are pharmaceutical compositions including one or more of the novel compounds, and pharmaceutical uses thereof. Compounds provided herein can typically inhibit an activity of a GCN2 and thus can be used for treating or preventing diseases related thereto.

Abstract: Disclosed are a cobalt-tungsten alloy and a method of fabricating the same. More particularly, cobalt-tungsten alloy nanowires according to an embodiment are formed using an electroplating method, a grain structure of the cobalt-tungsten alloy nanowires is controlled according to the content of tungsten, and the electrical resistivity of the cobalt-tungsten alloy nanowires can be reduced through annealing.

Abstract: Disclosed is a technical idea of forming ruthenium and ruthenium-cobalt alloy nanowires having various diameters using electroplating. More particularly, a technology of forming ruthenium and ruthenium-cobalt alloy nanowires on a porous template, on pores of which nanotubes are deposited using atomic layer deposition (ALD), using electroplating, and annealing the ruthenium and ruthenium-cobalt alloy nanowires to form ruthenium-cobalt alloy nanowires having various diameters.

Abstract: The present invention relates to hollow nanocoils having a three-dimensional helical structure in the form of a hollow tube and a method of manufacturing the same. The present invention provides a method of synthesizing metal nanocoils into inorganic hollow nanocoils using the galvanic replacement reaction and an electrochemical reaction including the Kirkendall effect. The inorganic hollow nanocoil structure body of the present invention can be applied to various fields such as sensors, catalysts, batteries, or gene delivery and therapy using a large surface area.

Abstract: Disclosed is a technical idea of forming ruthenium and ruthenium-cobalt alloy nanowires having various diameters using electroplating. More particularly, a technology of forming ruthenium and ruthenium-cobalt alloy nanowires on a porous template, on pores of which nanotubes are deposited using atomic layer deposition (ALD), using electroplating, and annealing the ruthenium and ruthenium-cobalt alloy nanowires to form ruthenium-cobalt alloy nanowires having various diameters.

Abstract: Disclosed are a cobalt-tungsten alloy and a method of fabricating the same. More particularly, cobalt-tungsten alloy nanowires according to an embodiment are formed using an electroplating method, a grain structure of the cobalt-tungsten alloy nanowires is controlled according to the content of tungsten, and the electrical resistivity of the cobalt-tungsten alloy nanowires can be reduced through annealing.

Abstract: The present disclosure relates to a novel tetrahydropyridine derivative compound, a stereoisomer thereof, or a pharmaceutically acceptable salt thereof, methods for preparing the compounds, methods for inhibiting UDP-3-O—(R-3-hydroxymyristoyl)-N-acetylglucosamine deacetylase (LpxC), methods for treating Gram-negative bacterial infections, the use of the compounds for the preparation of therapeutic medicaments for treating Gram-negative bacterial infections, and pharmaceutical compositions for prevention or treatment of Gram-negative bacterial infections, which contain the compounds. The compounds represented by formula I, stereoisomers thereof or pharmaceutically acceptable salts thereof according to the present disclosure can exhibit excellent effects on the treatment bacterial infections.

Abstract: The present disclosure relates to a novel tetrahydropyridine derivative compound, a stereoisomer thereof, or a pharmaceutically acceptable salt thereof, methods for preparing the compounds, methods for inhibiting UDP-3-O—(R-3-hydroxymyristoyl)-N-acetylglucosamine deacetylase (LpxC), methods for treating Gram-negative bacterial infections, the use of the compounds for the preparation of therapeutic medicaments for treating Gram-negative bacterial infections, and pharmaceutical compositions for prevention or treatment of Gram-negative bacterial infections, which contain the compounds. The compounds represented by formula I, stereoisomers thereof or pharmaceutically acceptable salts thereof according to the present disclosure can exhibit excellent effects on the treatment bacterial infections.

Abstract: A method of manufacturing a thin film transistor is disclosed. In one aspect, the method includes forming an active layer over a substrate and forming a gate insulating layer containing a dopant over the active layer. The method also includes irradiating laser light onto the gate insulating layer such that the dopant of the gate insulating layer diffuses into the active layer.

Abstract: A method of manufacturing a thin film transistor is disclosed. In one aspect, the method includes forming an active layer over a substrate and forming a gate insulating layer containing a dopant over the active layer. The method also includes irradiating laser light onto the gate insulating layer such that the dopant of the gate insulating layer diffuses into the active layer.