Patents by Inventor Jun Hwe CHA

Jun Hwe CHA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230309327
    Abstract: A memristor device, a fabricating method thereof, a synaptic device including the memristor device, and a neuromorphic device including the synaptic device are provided. The memristor device includes a first electrode, a second electrode spaced apart from the first electrode, a resistance change layer disposed between the first electrode and the second electrode and including a polymer, and an insertion layer disposed between the first electrode and the resistance change layer and including an oxide. An electrochemical metallization mechanism (ECM) filament is formed in the resistance change layer, and a valence change mechanism (VCM) filament is formed in the insertion layer. The memristor device has a synaptic characteristic according to a change in resistance of the resistance change layer. The insertion layer includes an Al2O3 layer. The insertion layer includes an Al2O3 layer formed by an atomic layer deposition (ALD) process using a temperature of about 200° C. or higher.
    Type: Application
    Filed: March 22, 2023
    Publication date: September 28, 2023
    Inventors: Sang Su PARK, Sung Yool Choi, Jun Hwe Cha, Jung Yeop Oh
  • Patent number: 11552267
    Abstract: The present disclosure provides a soft memristor for soft neuromorphic system including a substrate, a first electrode layer formed on the substrate, a metal diffusion barrier layer formed on the first electrode layer, a resistive switching material layer formed on the metal diffusion barrier layer, and a second electrode layer formed on the resistive switching material layer.
    Type: Grant
    Filed: July 29, 2020
    Date of Patent: January 10, 2023
    Assignee: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Sung-Yool Choi, Byung Chul Jang, Jun Hwe Cha
  • Publication number: 20210143349
    Abstract: The present disclosure provides a soft memristor for soft neuromorphic system including a substrate, a first electrode layer formed on the substrate, a metal diffusion barrier layer formed on the first electrode layer, a resistive switching material layer formed on the metal diffusion barrier layer, and a second electrode layer formed on the resistive switching material layer.
    Type: Application
    Filed: July 29, 2020
    Publication date: May 13, 2021
    Inventors: Sung-Yool Choi, Byung Chul Jang, Jun Hwe Cha
  • Publication number: 20200203486
    Abstract: Provided is a method for manufacturing a doped graphene thin film having a mesoporous structure using a flash lamp, which comprises: a step of coating a mixture solution of a doping element source-containing material comprising a doping element and graphene oxide on a substrate; and a step of irradiating light to the coated mixture solution using a flash lamp, thereby carrying out reduction of the graphene oxide and doping of the doping element at the same time.
    Type: Application
    Filed: December 19, 2019
    Publication date: June 25, 2020
    Applicant: Korea Advanced Institute of Science and Technology
    Inventors: Sung-Yool CHOI, Jun-Hwe CHA, Il-Doo KIM
  • Patent number: 10613068
    Abstract: Disclosed are polymer nanofiber sensors for detecting gas, which generates visible color change although a specific gas having a concentration of less than 1 ppm is exposed to the sensor in a short time, in which it is impossible to detect the gas using existing colorimetric sensors, through securing high surface area and porosity, and a method of the same.
    Type: Grant
    Filed: March 9, 2017
    Date of Patent: April 7, 2020
    Assignee: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Il-Doo Kim, Jun Hwe Cha, Won-Tae Koo
  • Publication number: 20170261479
    Abstract: Disclosed are polymer nanofiber sensors for detecting gas, which generates visible color change although a specific gas having a concentration of less than 1 ppm is exposed to the sensor in a short time, in which it is impossible to detect the gas using existing colorimetric sensors, through securing high surface area and porosity, and a method of the same.
    Type: Application
    Filed: March 9, 2017
    Publication date: September 14, 2017
    Applicant: Korea Advanced Institute of Science and Technology
    Inventors: Il-Doo KIM, Jun Hwe CHA, Won-Tae KOO