Abstract: Provided is a method of deconvoluting and restoring an image observed in a charged particle beam apparatus. The method includes receiving, by an image processing apparatus, an observed image acquired by a detector of the charged particle beam apparatus, calculating, by the image processing apparatus, a point spread function (PSF), deconvoluting and restoring, by the image processing apparatus, the observed image using the observed image and the PSF, calculating, by the image processing apparatus, an evaluation function of the parameter applied to a process of the deconvoluting, and adjusting, by the image processing apparatus, the parameter on the basis of a result of the evaluation function, and restoring the image after deconvoluting the observed image and the PSF again using an optimal parameter. Furthermore, a charged particle beam apparatus using the above-described method of deconvoluting and restoring the image is provided.

Abstract: Provided are a silicon nitride film etching composition, a method of etching a silicon nitride film using the same, and a manufacturing method of a semiconductor device. Specifically, a silicon nitride film may be stably etched with a high selection ratio relative to a silicon oxide film, and when the composition is applied to an etching process at a high temperature and a semiconductor manufacturing process, not only no precipitate occurs but also anomalous growth in which the thickness of the silicon oxide film is rather increased does not occur, thereby minimizing defects and reliability reduction.

Abstract: Provided are a silicon nitride film etching composition, a method of etching a silicon nitride film using the same, and a manufacturing method of a semiconductor device. Specifically, a silicon nitride film may be highly selectively etched as compared with a silicon oxide film, and when the composition is applied to an etching process at a high temperature and a semiconductor manufacturing process, not only no precipitate occurs but also anomalous growth in which the thickness of the silicon oxide film is rather increased does not occur, thereby minimizing defects and reliability reduction.