Abstract: Disclosed is a thin film transistor including: a gate electrode disposed on a substrate; a semiconductor layer overlapping the gate electrode with a gate insulating film interposed therebetween, and a source region and a drain region which are in contact with the semiconductor layer, in which the semiconductor layer includes a crystallized oxide semiconductor, and the crystallized oxide semiconductor includes a crystal having an X-ray diffraction (XRD) main peak Miller index (hkl) value of (009).

Abstract: Disclosed are a crystalline p-type semiconductor film having a plurality of crystal grains with an average grain size of submicron and including a tin-doped copper halide, and a semiconductor device, a thin film transistor, a diode, and an electronic device including the same.

Abstract: The present invention relates to a driving circuit including stages for supplying signals. The respective stages may include: a first LTPO transistor including a first transistor that is a low-temperature polycrystalline silicon thin film transistor (LTPS TFT) and a second transistor that is an oxide TFT; and a second LTPO transistor including a third transistor that is an LTPS TFT and a fourth transistor that is an oxide TFT. A first end of the first LTPO transistor may be connected to a gate of the second LTPO transistor, and voltages of signals corresponding to the respective stages from among the signals may be a voltage at a first end of the second LTPO transistor.

Abstract: A substrate polishing system includes: a polishing machine and a substrate transporter. The polishing machine includes: a lower surface plate to which a substrate is mounted, and an upper surface plate which faces the lower surface plate and polishes the substrate in cooperation with the lower surface plate, the upper surface plate having a larger area than the substrate mounted on the lower surface plate. The substrate transporter is adjacent to the polishing machine and commonly transports the substrate to and from the polishing machine in a first direction, attaches the substrate to the lower surface plate before polishing thereof, and separates from the lower surface plate the substrate after polishing thereof.

Abstract: A thin-film transistor (TFT) array substrate is provided. The TFT array substrate includes a base substrate, a semiconductor layer disposed on the base substrate, an insulating layer disposed on the semiconductor layer, and a gate electrode disposed on the insulating layer. A top surface of a portion of the insulating layer overlapping the semiconductor layer in a plan view of the base substrate and a top surface of the gate electrode are placed on the same level.

Abstract: A thin-film transistor (TFT) array substrate is provided. The TFT array substrate includes a base substrate, a semiconductor layer disposed on the base substrate, an insulating layer disposed on the semiconductor layer, and a gate electrode disposed on the insulating layer. A top surface of a portion of the insulating layer overlapping the semiconductor layer in a plan view of the base substrate and a top surface of the gate electrode are placed on the same level.

Abstract: A thin-film transistor (TFT) array substrate is provided. The TFT array substrate includes a base substrate, a semiconductor layer disposed on the base substrate, an insulating layer disposed on the semiconductor layer, and a gate electrode disposed on the insulating layer. A top surface of a portion of the insulating layer overlapping the semiconductor layer in a plan view of the base substrate and a top surface of the gate electrode are placed on the same level.

Abstract: A method for manufacturing a display device includes forming a first gate metal wire on a substrate, forming a first insulation layer that covers the first gate metal wire, forming a second gate metal wire on the first insulation layer, forming a second main insulation layer that covers the second gate metal wire, forming a second auxiliary insulation layer on the second main insulation layer, forming an exposed portion of an upper surface of the second main insulation layer by polishing the second auxiliary insulation layer, and forming a first data metal wire on the second main insulation layer and the second auxiliary insulation layer.

Abstract: A method for manufacturing a display device includes forming a first gate metal wire on a substrate, forming a first insulation layer that covers the first gate metal wire, forming a second gate metal wire on the first insulation layer, forming a second main insulation layer that covers the second gate metal wire, forming a second auxiliary insulation layer on the second main insulation layer, forming an exposed portion of an upper surface of the second main insulation layer by polishing the second auxiliary insulation layer, and forming a first data metal wire on the second main insulation layer and the second auxiliary insulation layer.

Abstract: A method for manufacturing a display device includes forming a first gate metal wire on a substrate, forming a first insulation layer that covers the first gate metal wire, forming a second gate metal wire on the first insulation layer, forming a second main insulation layer that covers the second gate metal wire, forming a second auxiliary insulation layer on the second main insulation layer, forming an exposed portion of an upper surface of the second main insulation layer by polishing the second auxiliary insulation layer, and forming a first data metal wire on the second main insulation layer and the second auxiliary insulation layer.

Abstract: A method of manufacturing a transistor display panel and a transistor display panel, the method including forming a polycrystalline silicon layer on a substrate; forming an active layer by patterning the polycrystalline silicon layer; forming a first insulating layer covering the substrate and the active layer; exposing the active layer by polishing the first insulating layer using a polishing apparatus; and forming a second insulating layer that contacts the first insulating layer and the active layer, wherein exposing the active layer by polishing the first insulating layer includes coating a first slurry on a surface of the first insulating layer, the first slurry reducing a polishing rate of the active layer.

Abstract: A thin-film transistor (TFT) array substrate is provided. The TFT array substrate includes a base substrate, a semiconductor layer disposed on the base substrate, an insulating layer disposed on the semiconductor layer, and a gate electrode disposed on the insulating layer. A top surface of a portion of the insulating layer overlapping the semiconductor layer in a plan view of the base substrate and a top surface of the gate electrode are placed on the same level.

Abstract: A method of manufacturing a display device includes: forming an active layer on a substrate; forming a first insulation layer covering the active layer; forming a gate metal line on the first insulation layer; forming a third insulation layer covering the gate metal line and including a silicon oxide; forming a fourth insulation layer including a silicon nitride on the third insulation layer; forming a fifth insulation layer including a silicon oxide on the fourth insulation layer; arranging a blocking member over a region in which the active layer and the gate metal line overlap; forming a fifth auxiliary insulation layer by doping nitrogen ions in the fifth insulation layer; and exposing a part of an upper surface of the fourth insulation layer by removing a portion of a fifth main insulation layer of the fifth insulation layer which does not overlap the fifth auxiliary insulation layer.

Abstract: A method of manufacturing a display device includes: forming an active layer on a substrate; forming a first insulation layer covering the active layer; forming a gate metal line on the first insulation layer; forming a third insulation layer covering the gate metal line and including a silicon oxide; forming a fourth insulation layer including a silicon nitride on the third insulation layer; forming a fifth insulation layer including a silicon oxide on the fourth insulation layer; arranging a blocking member over a region in which the active layer and the gate metal line overlap; forming a fifth auxiliary insulation layer by doping nitrogen ions in the fifth insulation layer; and exposing a part of an upper surface of the fourth insulation layer by removing a portion of a fifth main insulation layer of the fifth insulation layer which does not overlap the fifth auxiliary insulation layer.

Abstract: A method for manufacturing a display device includes forming a first gate metal wire on a substrate, forming a first insulation layer that covers the first gate metal wire, forming a second gate metal wire on the first insulation layer, forming a second main insulation layer that covers the second gate metal wire, forming a second auxiliary insulation layer on the second main insulation layer, forming an exposed portion of an upper surface of the second main insulation layer by polishing the second auxiliary insulation layer, and forming a first data metal wire on the second main insulation layer and the second auxiliary insulation layer.

Abstract: A method of manufacturing a transistor display panel and a transistor display panel, the method including forming a polycrystalline silicon layer on a substrate; forming an active layer by patterning the polycrystalline silicon layer; forming a first insulating layer covering the substrate and the active layer; exposing the active layer by polishing the first insulating layer using a polishing apparatus; and forming a second insulating layer that contacts the first insulating layer and the active layer, wherein exposing the active layer by polishing the first insulating layer includes coating a first slurry on a surface of the first insulating layer, the first slurry reducing a polishing rate of the active layer.

Abstract: A substrate polishing system includes: a polishing machine and a substrate transporter. The polishing machine includes: a lower surface plate to which a substrate is mounted, and an upper surface plate which faces the lower surface plate and polishes the substrate in cooperation with the lower surface plate, the upper surface plate having a larger area than the substrate mounted on the lower surface plate. The substrate transporter is adjacent to the polishing machine and commonly transports the substrate to and from the polishing machine in a first direction, attaches the substrate to the lower surface plate before polishing thereof, and separates from the lower surface plate the substrate after polishing thereof.

Abstract: A flexible display device includes a flexible substrate including a display region and a peripheral region substantially surrounding the display region, the display region including a first display region and a second display region, a first display structure at the first display region of the flexible substrate, the first display structure including nanoparticles, and a second display structure at the second display region of the flexible substrate, the second display structure including silicon.

Abstract: A display device includes: a display having a plurality of display regions on a body that are configured to display images; a touch sensor configured to sense a first touch input; and a controller configured to control the images displayed on the plurality of display regions in response to the first touch input sensed by the touch sensor, wherein the controller is further configured to control the display to display at least one piece of content at at least one of the plurality of display regions, and to move the at least one piece of content to a first display region from among the plurality of display regions and to display the moved content at the first display region in response to the first touch input when the touch sensor senses the first touch input generated at the first display region.

Abstract: An organic light emitting diode (OLED) display includes: a substrate; an organic light emitting diode on the substrate; and a thin film encapsulation layer including a first inorganic layer having a first density on the substrate and a second inorganic layer having a second density on the first inorganic layer, the second density being different from the first density, and the organic light emitting diode being encapsulated between the thin film encapsulation layer and the substrate.