Abstract: Provided a sputtering target and a method for manufacturing the sputtering target, in which a penetration of impurities into the target material during bonding is suppressed A sputtering target, wherein an intensity ratio (B/A) of a minimum reflection intensity B to a maximum reflection intensity A of a back surface wave of a target material as measured by a water immersion ultrasonic flaw detection inspection after bonding the target material is 0.70 or more, and wherein a water absorption rate of the target material determined by a relationship of a weight change rate (100×(a?b)/b) is 0.01% to 1.0%, where (a) is a weight after immersion as measured after immersing the target material in water for 10 hours and removing the water on a surface, and (b) is a dry weight of the target material before the immersion.

Abstract: An object of the present invention is to provide an IGZO sputtering target capable of improving uniformity for at least one property selected from the number of microcracks in the structure, the number of pores in the sintered body structure, and surface roughness. The IGZO sputtering target according to the present invention has an oxide sintered body, the oxide sintered body comprising indium (In), gallium (Ga), zinc (Zn) and unavoidable impurities, wherein, on a surface of the oxide sintered body, a lightness difference ?L* satisfies ?L*<3.0, in which the ?L* is obtained by subtracting lightness Lc*at a central portion on the surface from lightness Le* at a position of 10 mm from an end portion to the central portion side on the surface, and wherein the oxide sintered body has a relative density of 97.0% or more.

Abstract: A ceramic sputtering target, wherein when a cross-sectional structure of a sputtering surface is observed with an electron microscope, an amount of microcracks defined below is 50 ?m/mm or less, and after performing a peel test on the sputtering surface, an area ratio of peeled particles confirmed by observing the cross-sectional structure with an electron microscope is 1.0% or less.

Abstract: An object of the present invention is to provide an IGZO sputtering target capable of improving uniformity for at least one property selected from the number of microcracks in the structure, the number of pores in the sintered body structure, and surface roughness. The IGZO sputtering target according to the present invention has an oxide sintered body, the oxide sintered body comprising indium (In), gallium (Ga), zinc (Zn) and unavoidable impurities, wherein, on a surface of the oxide sintered body, a lightness difference ?L* satisfies ?L*<3.0, in which the ?L* is obtained by subtracting lightness Lc*at a central portion on the surface from lightness Le* at a position of 10 mm from an end portion to the central portion side on the surface, and wherein the oxide sintered body has a relative density of 97.0% or more.

Abstract: Provided a sputtering target and a method for manufacturing the sputtering target, in which a penetration of impurities into the target material during bonding is suppressed A sputtering target, wherein an intensity ratio (B/A) of a minimum reflection intensity B to a maximum reflection intensity A of a back surface wave of a target material as measured by a water immersion ultrasonic flaw detection inspection after bonding the target material is 0.70 or more, and wherein a water absorption rate of the target material determined by a relationship of a weight change rate (100×(a?b)/b) is 0.01% to 1.0%, where (a) is a weight after immersion as measured after immersing the target material in water for 10 hours and removing the water on a surface, and (b) is a dry weight of the target material before the immersion.

Abstract: [Problem to be solved] To provide an IGZO sputtering target occurring less arcing [Means for solving the problem] An IGZO sputtering target comprising In, Ga, Zn, and O, wherein atom ratios for In, Ga, and Zn are: 0.30?In/(In+Ga+Zn)?0.36, 0.30?Ga/(In+Ga+Zn)?0.36 and 0.30?Zn/(In+Ga+Zn)?0.36, wherein a relative density is at least 96%, wherein average crystal grain size in surface of the sputtering target is 30.0 ?m or less, and wherein difference of the grain size in surface of the sputtering target is 20% or less (1.0?Dmax/Dmin?1.2).