Patents by Inventor Jun NAKAGOMI
Jun NAKAGOMI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220384146Abstract: A plasma processing apparatus includes a process container, a power supply configured to supply radio frequency or microwave power for generating plasma in the process container, a plurality of gas nozzles, each having a gas flow passage therein, and a plurality of protrusions formed integrally with a ceiling wall and/or a sidewall that defines the process container, the plurality of protrusions protruding from the ceiling wall and/or the sidewall. Each of the plurality of protrusions has a gas hole at a leading end of the protrusion. The ceiling wall and/or the sidewall has recesses in which the plurality of gas nozzles is arranged, respectively, such that the gas flow passage of each of the plurality of gas nozzles communicates with the gas hole of each of the plurality of protrusions.Type: ApplicationFiled: May 27, 2022Publication date: December 1, 2022Inventors: Syouji YAMAGISHI, Hiroki EHARA, Hiroyuki HAYASHI, Jun NAKAGOMI
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Patent number: 11508556Abstract: A plasma processing apparatus includes a microwave introducing module provided at a ceiling portion of a processing chamber and configured to introduce a microwave for generating plasma of a gas into the processing chamber; and a plurality of gas supply holes formed at the ceiling portion of the processing chamber and configured to introduce the gas into a plasma processing space. Each of the plurality of gas supply holes includes a fine hole and a cavity that is expanded from the fine hole and opened to the plasma processing space. A diameter of the cavity on the plasma processing space side is 3 mm or more and is ? or less of a wavelength of a surface wave of a microwave in the plasma.Type: GrantFiled: May 16, 2018Date of Patent: November 22, 2022Assignee: TOKYO ELECTRON LIMITEDInventors: Taro Ikeda, Tomohito Komatsu, Jun Nakagomi, Kei Nagayosi
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Patent number: 11244810Abstract: An electric field sensor includes a probe, a cylindrical probe guide, an insulating member, a preload spring and a connector. The probe serves as an inner conductor of a coaxial transmission path and has a portion forming a monopole antenna at a tip end to be in constant contact with a microwave transmission window by a pressing force of a built-in spring thereof. The probe guide is disposed at an outer side of the probe and serves as an outer conductor of the coaxial transmission path. The insulating member is disposed between the probe and the probe guide. The preload spring preloads the probe guide downward and presses the probe guide so that the tip end of the probe guide comes in constant contact with the planar slot antenna. The connector is connected to the probe and the probe guide to connect coaxial signal cables for extracting signals.Type: GrantFiled: May 12, 2020Date of Patent: February 8, 2022Assignee: TOKYO ELECTRON LIMITEDInventors: Kiyoshi Mori, Yuki Osada, Jun Nakagomi, Yoshiyuki Harima
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Publication number: 20200365371Abstract: An electric field sensor includes a probe, a cylindrical probe guide, an insulating member, a preload spring and a connector. The probe serves as an inner conductor of a coaxial transmission path and has a portion forming a monopole antenna at a tip end to be in constant contact with a microwave transmission window by a pressing force of a built-in spring thereof. The probe guide is disposed at an outer side of the probe and serves as an outer conductor of the coaxial transmission path. The insulating member is disposed between the probe and the probe guide. The preload spring preloads the probe guide downward and presses the probe guide so that the tip end of the probe guide comes in constant contact with the planar slot antenna. The connector is connected to the probe and the probe guide to connect coaxial signal cables for extracting signals.Type: ApplicationFiled: May 12, 2020Publication date: November 19, 2020Inventors: Kiyoshi MORI, Yuki OSADA, Jun NAKAGOMI, Yoshiyuki HARIMA
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Patent number: 10804078Abstract: A plasma processing apparatus includes a chamber, a mounting table for mounting thereon a target object in the chamber, a plasma source configured to introduce microwaves into the chamber through a ceiling wall of the chamber and generate a surface wave plasma in the chamber, a first gas introduction unit for introducing a first gas into the chamber from the ceiling wall, and a second gas introduction unit for introducing a second gas into the chamber from a location between the ceiling wall and the mounting table. The second gas introduction unit includes a ring-shaped member having a plurality of gas injection holes and provided at a predetermined height position between the ceiling wall and the mounting table, and a leg part which connects the ceiling wall and the ring-shaped member. The second gas is supplied to the ring-shaped member through the leg part.Type: GrantFiled: April 14, 2017Date of Patent: October 13, 2020Assignee: TOKYO ELECTRON LIMITEDInventors: Yutaka Fujino, Tomohito Komatsu, Taro Ikeda, Jun Nakagomi, Takeo Wakutsu
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Patent number: 10557200Abstract: A plasma processing device processes a substrate by generating plasma using a surface wave formed on a surface of a shower plate by a supplied microwave, which includes a plasma generating antenna equipped with the shower plate for supplying first and second gases into a processing vessel, and a drooping member installed to protrude downward from a lower end surface of the shower plate. An outer surface of the drooping member spreads outward as it goes from a top end to a bottom end thereof. The shower plate includes first and second gas supply holes through which the first and second gases are supplied into the processing vessel, respectively. The first gas supply holes are disposed inward of the outer surface of the drooping member. The second gas supply holes are disposed outward of the outer surface of the drooping member.Type: GrantFiled: September 4, 2014Date of Patent: February 11, 2020Assignee: TOKYO ELECTRON LIMITEDInventors: Taro Ikeda, Shigeru Kasai, Emiko Hara, Yutaka Fujino, Yuki Osada, Jun Nakagomi, Tomohito Komatsu
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Publication number: 20190075644Abstract: A plasma processing apparatus, for converting a gas into plasma by using microwaves microwaves and processing a target object in a processing chamber, includes a microwave introducing surface and a plurality of gas injection holes. Microwaves from a microwave introducing unit are introduced through microwave introducing surface and surface waves of the microwaves propagate on the microwave introducing surface. The gas injection holes are arranged at predetermined intervals within a predetermined range from a boundary line between the microwave introducing surface and a surface of the processing chamber that is adjacent to the microwave introducing surface.Type: ApplicationFiled: September 6, 2018Publication date: March 7, 2019Inventors: Taro IKEDA, Tomohito KOMATSU, Jun NAKAGOMI
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Publication number: 20180337023Abstract: A plasma processing apparatus includes a microwave introducing module provided at a ceiling portion of a processing chamber and configured to introduce a microwave for generating plasma of a gas into the processing chamber; and a plurality of gas supply holes formed at the ceiling portion of the processing chamber and configured to introduce the gas into a plasma processing space. Each of the plurality of gas supply holes includes a fine hole and a cavity that is expanded from the fine hole and opened to the plasma processing space. A diameter of the cavity on the plasma processing space side is 3 mm or more and is ? or less of a wavelength of a surface wave of a microwave in the plasma.Type: ApplicationFiled: May 16, 2018Publication date: November 22, 2018Inventors: Taro IKEDA, Tomohito KOMATSU, Jun NAKAGOMI, Kei NAGAYOSI
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Patent number: 9991097Abstract: A plasma processing apparatus includes a chamber; a mounting table configured to mount thereon a target object in the chamber; a plasma source configured to introduce microwaves into the chamber through a ceiling wall of the chamber and generate a surface wave plasma in the chamber; a first gas introduction unit configured to introduce a first gas into the chamber from the ceiling wall; and a second gas introduction unit configured to introduce a second gas into the chamber from a predetermined height position between the ceiling wall and the mounting table. The second gas introduction unit has a plurality of nozzles extending from the ceiling wall toward the mounting table and arranged on a same circumference at a regular interval. Each of the nozzles discharges the second gas toward a nozzle adjacent thereto.Type: GrantFiled: October 25, 2017Date of Patent: June 5, 2018Assignee: TOKYO ELECTRON LIMITEDInventors: Tomohito Komatsu, Shigenori Ozaki, Yutaka Fujino, Jun Nakagomi
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Publication number: 20180114677Abstract: A plasma processing apparatus includes a chamber; a mounting table configured to mount thereon a target object in the chamber; a plasma source configured to introduce microwaves into the chamber through a ceiling wall of the chamber and generate a surface wave plasma in the chamber; a first gas introduction unit configured to introduce a first gas into the chamber from the ceiling wall; and a second gas introduction unit configured to introduce a second gas into the chamber from a predetermined height position between the ceiling wall and the mounting table. The second gas introduction unit has a plurality of nozzles extending from the ceiling wall toward the mounting table and arranged on a same circumference at a regular interval. Each of the nozzles discharges the second gas toward a nozzle adjacent thereto.Type: ApplicationFiled: October 25, 2017Publication date: April 26, 2018Inventors: Tomohito KOMATSU, Shigenori OZAKI, Yutaka FUJINO, Jun NAKAGOMI
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Publication number: 20170309452Abstract: A plasma processing apparatus includes a chamber, a mounting table for mounting thereon a target object in the chamber, a plasma source configured to introduce microwaves into the chamber through a ceiling wall of the chamber and generate a surface wave plasma in the chamber, a first gas introduction unit for introducing a first gas into the chamber from the ceiling wall, and a second gas introduction unit for introducing a second gas into the chamber from a location between the ceiling wall and the mounting table. The second gas introduction unit includes a ring-shaped member having a plurality of gas injection holes and provided at a predetermined height position between the ceiling wall and the mounting table, and a leg part which connects the ceiling wall and the ring-shaped member. The second gas is supplied to the ring-shaped member through the leg part.Type: ApplicationFiled: April 14, 2017Publication date: October 26, 2017Inventors: Yutaka FUJINO, Tomohito KOMATSU, Taro IKEDA, Jun NAKAGOMI, Takeo WAKUTSU
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Publication number: 20160222516Abstract: A plasma processing device processes a substrate by generating plasma using a surface wave formed on a surface of a shower plate by a supplied microwave, which includes a plasma generating antenna equipped with the shower plate for supplying first and second gases into a processing vessel, and a drooping member installed to protrude downward from a lower end surface of the shower plate. An outer surface of the drooping member spreads outward as it goes from a top end to a bottom end thereof. The shower plate includes first and second gas supply holes through which the first and second gases are supplied into the processing vessel, respectively. The first gas supply holes are disposed inward of the outer surface of the drooping member. The second gas supply holes are disposed outward of the outer surface of the drooping member.Type: ApplicationFiled: September 4, 2014Publication date: August 4, 2016Applicant: TOKYO ELECTRON LIMITEDInventors: Taro IKEDA, Shigeru KASAI, Emiko HARA, Yutaka FUJINO, Yuki OSADA, Jun NAKAGOMI, Tomohito KOMATSU