Abstract: A physical quantity sensor includes a first substrate, an electrode provided on the first substrate, a diaphragm made of semiconductor material, a second substrate fixed to the first substrate, a dielectric film provided on the diaphragm, and a wall provided between the dielectric film and the electrode. The second substrate supports the diaphragm such that the diaphragm has an opposing surface facing the electrode across a space. The dielectric film is provided on the opposing surface of the diaphragm. The dielectric film has a surface facing the electrode across the space. The wall includes a first protrusion and a second protrusion. The first protrusion protrudes toward the electrode from the surface of the dielectric film. The second protrusion protrudes toward the electrode from the first protrusion, and contacts the electrode. The second protrusion is made of material which is different from material of the dielectric film.

Abstract: A physical quantity sensor includes a first substrate, an electrode provided on the first substrate, a diaphragm made of semiconductor material, a second substrate fixed to the first substrate, a dielectric film provided on the diaphragm, and a wall provided between the dielectric film and the electrode. The second substrate supports the diaphragm such that the diaphragm has an opposing surface facing the electrode across a space. The dielectric film is provided on the opposing surface of the diaphragm. The dielectric film has a surface facing the electrode across the space. The wall includes a first protrusion and a second protrusion. The first protrusion protrudes toward the electrode from the surface of the dielectric film. The second protrusion protrudes toward the electrode from the first protrusion, and contacts the electrode. The second protrusion is made of material which is different from material of the dielectric film.

Abstract: Provided is an electrochemical measurement device capable of measuring more accurately and an electrochemical measurement apparatus provided with the electrochemical measurement device. The electrochemical measurement device includes a base part, and a placement part on which an object to be measured is placed, the placement part being provided to the base part. The electrochemical measurement device also includes an electrode part provided near the placement part on the base part, a wiring part provided on a surface of the base part and electrically connected to the electrode part, and an insulator that covers the wiring part. Further, a protruding part is provided on the base part of the electrochemical measurement device so as to protrude past the insulator.

Abstract: Provided is an electrochemical measurement device capable of measuring more accurately and an electrochemical measurement apparatus provided with the electrochemical measurement device. The electrochemical measurement device includes a base part, and a placement part on which an object to be measured is placed, the placement part being provided to the base part. The electrochemical measurement device also includes an electrode part provided near the placement part on the base part, a wiring part provided on a surface of the base part and electrically connected to the electrode part, and an insulator that covers the wiring part. Further, a protruding part is provided on the base part of the electrochemical measurement device so as to protrude past the insulator.

Abstract: A semiconductor physical quantity sensor includes: a first base material; an electrode formed on the first base material; a diaphragm which bends in accordance with a physical quantity applied from the outside; a second base material fixed to the first base material and supporting the diaphragm such that the diaphragm is opposed to the electrode with a space (S) in between; and an insulator formed on a surface on the first base material side of the diaphragm. Moreover, a wall portion to define the space (S) is formed between the insulator and the electrode.

Abstract: A semiconductor physical quantity sensor includes: a first base material; an electrode formed on the first base material; a diaphragm which bends in accordance with a physical quantity applied from the outside; a second base material fixed to the first base material and supporting the diaphragm such that the diaphragm is opposed to the electrode with a space (S) in between; and an insulator formed on a surface on the first base material side of the diaphragm. Moreover, a wall portion to define the space (S) is formed between the insulator and the electrode.

Abstract: An electrostatic capacitance sensor 1 includes a semiconductor substrate 4. A first fixing plate 2 is joined to a one-side surface 4a of the semiconductor substrate 4, and a second fixing plate 3 is joined to other-side surface 4b of the semiconductor substrate 4, whereby a space portion S is formed. Then, static electricity suppressing means 70 for suppressing static electricity from being generated in the space portion S is provided in the electrostatic capacitance sensor 1.

Abstract: An electrostatic capacitance sensor 1 includes a semiconductor substrate 4. A first fixing plate 2 is joined to a one-side surface 4a of the semiconductor substrate 4, and a second fixing plate 3 is joined to other-side surface 4b of the semiconductor substrate 4, whereby a space portion S is formed. Then, static electricity suppressing means 70 for suppressing static electricity from being generated in the space portion S is provided in the electrostatic capacitance sensor 1.

Abstract: A support for a separation membrane includes a long-fiber nonwoven fabric composed of thermoplastic continuous filaments.

Abstract: A support for a separation membrane includes a long-fiber nonwoven fabric composed of thermoplastic continuous filaments.

Abstract: An electrostatically driven latchable actuator system has an actuator and a pair of side effectors on opposite ends of the actuator. The actuator is resiliently supported to a substrate and is movable along a linear axis between two operative positions as being electrically attracted to one of the side effectors. A latch mechanism is provided to mechanically latch the actuator at either of the operative positions. The side effectors are movably towards and away from the actuator along the linear axis between a normal position and a shifted position close to the actuator. Both of the side effectors are also resiliently supported to the substrate to be movable towards the actuator by being electrostatically attracted thereto and away from the actuator by resiliency.

Abstract: A process for fabricating a micro-electro-mechanical system (MEMS) composed of fixed components fixedly supported on a lower substrate and movable components movably supported on the lower substrate. The process utilizes an upper substrate separate from the lower substrate. The upper substrate is selectively etched in its top layer to form therein a plurality of posts which project commonly from a bottom layer of the upper substrate. The posts include the fixed components to be fixed to the lower substrate and the movable components which are resiliently supported only to one or more of the fixed components to be movable relative to the fixed components. The lower substrate is formed in its top surface with at least one recess. The upper substrate is then bonded to the top of the lower substrate upside down in such a manner as to place the fixed components directly on the lower substrate and to place the movable components upwardly of the recess.

Abstract: A process for fabricating a micro-electro-mechanical system (MEMS) composed of fixed components fixedly supported on a lower substrate and movable components movably supported on the lower substrate. The process utilizes an upper substrate separate from the lower substrate. The upper substrate is selectively etched in its top layer to form therein a plurality of posts which project commonly from a bottom layer of the upper substrate. The posts include the fixed components to be fixed to the lower substrate and the movable components which are resiliently supported only to one or more of the fixed components to be movable relative to the fixed components. The lower substrate is formed in its top surface with at least one recess. The upper substrate is then bonded to the top of the lower substrate upside down in such a manner as to place the fixed components directly on the lower substrate and to place the movable components upwardly of the recess.

Abstract: An electrostatically driven latchable actuator system has an actuator and a pair of side effectors on opposite ends of the actuator. The actuator is resiliently supported to a substrate and is movable along a linear axis between two operative positions as being electrically attracted to one of the side effectors. A latch mechanism is provided to mechanically latch the actuator at either of the operative positions. The side effectors are movably towards and away from the actuator along the linear axis between a normal position and a shifted position close to the actuator. Both of the side effectors are also resiliently supported to the substrate to be movable towards the actuator by being electrostatically attracted thereto and away from the actuator by resiliency.

Abstract: A flexible area 2 is joined at one end via a thermal insulation area 7 to a semiconductor substrate 3 which becomes a frame and at an opposite end to a moving element 5. The thermal insulation area 7 is made of a thermal insulation material a resin such as polyimide or a fluoridated resin. The flexible area 2 is made up of a thin portion 2S and a thin film 2M different in thermal expansion coefficient. When a diffused resistor 6 formed on the surface of the thin portion 2S is heated, the flexible area 2 is displaced because of the thermal expansion difference between the thin portion 2S and the thin film 2M, and the moving element 5 is displayed with respect to the semiconductor substrate 3.

Abstract: A flexible area 2 is joined at one end via a thermal insulation area 7 to a semiconductor substrate 3 which becomes a frame and at an opposite end to a moving element 5. The thermal insulation area 7 is made of a thermal insulation material a resin such as polyimide or a fluoridated resin. The flexible area 2 is made up of a thin portion 2S and a thin film 2M different in thermal expansion coefficient. When a diffused resistor 6 formed on the surface of the thin portion 2S is heated, the flexible area 2 is displaced because of the thermal expansion difference between the thin portion 2S and the thin film 2M, and the moving element 5 is displayed with respect to the semiconductor substrate 3.

Abstract: A flexible area 2 is joined at one end via a thermal insulation area 7 to a semiconductor substrate 3 which becomes a frame and at an opposite end to a moving element 5. The thermal insulation area 7 is made of a thermal insulation material a resin such as polyimide or a fluoridated resin. The flexible area 2 is made up of a thin portion 2S and a thin film 2M different in thermal expansion coefficient. When a diffused resistor 6 formed on the surface of the thin portion 2S is heated, the flexible area 2 is displaced because of the thermal expansion difference between the thin portion 2S and the thin film 2M, and the moving element 5 is displayed with respect to the semiconductor substrate 3.