Abstract: A method of forming a nanometer-scale prominence and depression structure on a zinc oxide thin film in a wet-etching method, and the method includes the steps of: preparing a substrate; forming a nano structure having a height and a width of a nanometer range; forming the zinc oxide thin film on the substrate on which the nano structure is formed; and wet-etching the zinc oxide thin film, in which in the wet-etching step, zinc oxide having relatively low physical compactness is preferentially etched since the zinc oxide is positioned on the nano structure, and thus the prominence and depression structure is formed around the nano structure by the etching. The method is effective in that a thin film can be uniformly formed on the prominence and depression structure, and an electrolyte or an organic material may uniformly penetrate between the prominence and depression structure.

Abstract: An apparatus and method for measurement of radiation intensity for testing reliability of a solar cell, and a method for testing the reliability of the solar cell. The apparatus includes a first solar cell receiving a predetermined intensity of radiation or more to generate electricity, a second solar cell receiving a predetermined intensity of radiation or more to generate electricity; a temperature sensor sensing a temperature of the second solar cell; a cooler cooling the first solar cell; and a controller measuring the intensity of radiation applied to the first solar cell, and controlling the cooler to prevent the temperature of the first solar cell from increasing above a predetermined temperature depending on the temperature of the second solar cell sensed by the temperature sensor.

Abstract: The present invention relates to a method and device for preparing powder by depositing nano metal, alloy, ceramic particles that are excellent in size uniformity, on a surface of the powder that is a base, using a vacuum deposition method. In particular, the present invention provides a method and device for preparing the powder on which the nano metal, alloy, and ceramic particles of a very uniform size are deposited, by simultaneously performing deposition and agitation using an effective agitation means for solving a disadvantage of a conventional method where deposition and agitation are separately performed. Also, the present invention provides a method and device for preparing the powder on which nano particles are deposited, in which a nano characteristic is kept by preventing a coalescence phenomenon of nano particles even when a deposition time for increasing contents of the nano particles increases in their preparation.

Abstract: Disclosed is a method of forming an ITO film by optimized sequential sputter deposition of seed and bulk layers having different sputter process conditions, which is applicable to various display devices, and more particularly, to an organic light-emitting device needing an ultra-planarized surface roughness. In forming a transparent conducting electrode of a display device on a transparent substrate with an ITO film including a seed layer and a bulk layer, a method of forming the ITO film includes a first sputter deposition step of forming the ITO film on the substrate with sputtering gas supplied to an ion source at an ambience of oxygen flowing in the vicinity of the substrate and a second sputter deposition step of forming the ITO film with the sputtering gas supplied to the ion source only, wherein the first and second sputter deposition steps have different process conditions, respectively and wherein the seed and bulk layers are deposited by the first or second sputter deposition step.

Abstract: A method of depositing indium oxide or indium tin oxide thin film on a polymer substrate is disclosed. In the method, oxygen or argon ion beam is radiated on a polymer substrate by a constant accelerating energy in a vacuum state to modify the surface of the polymer substrate, on which an IO thin film or an ITO thin film is deposited while oxygen ion beam, argon ion beam or their mixture ion beam is being radiated in a vacuum state. In addition, ion beam is generated from a cold cathode ion source by using argon, oxygen or their mixture gas and sputtered at a target substance composed of In2O3 or In2O3 and SnO2, thereby an IO or an ITO thin film can be deposited on the surface-modified polymer substrate.

Abstract: Disclosed is a method of forming an ITO film by optimized sequential sputter deposition of seed and bulk layers having different sputter process conditions, which is applicable to various display devices, and more particularly, to an organic light-emitting device needing an ultra-planarized surface roughness. In forming a transparent conducting electrode of a display device on a transparent substrate with an ITO film including a seed layer and a bulk layer, a method of forming the ITO film includes a first sputter deposition step of forming the ITO film on the substrate with sputtering gas supplied to an ion source at an ambience of oxygen flowing in the vicinity of the substrate and a second sputter deposition step of forming the ITO film with the sputtering gas supplied to the ion source only, wherein the first and second sputter deposition steps have different process conditions, respectively and wherein the seed and bulk layers are deposited by the first or second sputter deposition step.

Abstract: Disclosed is an apparatus for modifying a surface of a material enabling to improve an ion beam treated effect and efficiency of a surface modified material by installing a gas distributor distributing a reactive gas uniformly, an exhaust valve controlling an exhaust speed of the reactive gas, or a plurality of ion beam treatment areas providing various surface modification effects.

Abstract: Disclosed is a processing method for forming a thick film having an improved adhesion to a surface-modified substrate and an apparatus thereof enabling to form a thick film having the improved adhesion to a polymeric surface by modifying the polymeric surface to have a hydrophilic property. The method includes the steps of preparing a substrate of a polymer material, surface-modifying the substrate, forming a seed layer on the substrate, and forming the thick film on the seed layer. The apparatus includes an unloading area supplying a substrate of a polymer material, a surface treating area modifying a surface of the substrate, a seed layer formation area forming a seed layer on the surface-modified substrate, a thick film formation area forming a thick film on the seed layer, and a loading area loading the substrate.

Abstract: The present invention relates to a process for modifying a polymer surface by irradiating ion particles with energy on a polymer surface, while blowing the reactive gas directly on the polymer surface under vacuum condition, to decrease the wetting angle of the polymer surface. The process for modifying the polymer surface according to the present invention can be widely used in the application fields of polymers because it provides effects of increasing the spreading of aqueous dyestuffs, increasing adhesive strength with other materials and inhibition of light scattering by decreasing the wetting angle of the polymer surface.