Patents by Inventor Jun Takahaski

Jun Takahaski has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Sublimation growth of single crystal SiC
    Patent number: 5441011
    Abstract: A method of growing a first SiC single crystal on a seed crystal including a second SiC single crystal, comprises the steps of setting a SiC source material at an initial temperature, growing the first SiC single crystal on the seed crystal including the second SiC single crystal at a temperature lower than the initial temperature of the source material and gradually decreasing the source material temperature from the initial temperature during at least a predetermined period during the growing step.
    Type: Grant
    Filed: March 15, 1994
    Date of Patent: August 15, 1995
    Assignee: Nippon Steel Corporation
    Inventors: Jun Takahaski, Masatoshi Kanaya