Patents by Inventor Jun Tatebayashi

Jun Tatebayashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220278249
    Abstract: Provided are: a near infrared light-emitting semiconductor element that does not contain any harmful elements and that makes it possible to obtain near infrared light of a stable wavelength in a narrow band regardless of the operating environment; and a method for producing the near infrared light-emitting semiconductor element. GaN is used in the method for producing a near infrared light-emitting semiconductor element, and an active layer added in order to substitute Tm with Ga is formed on GaN in a reaction container at a growth rate of 0.1-30 ?m/h without removal from said reaction container using an organometallic vapor phase growth method under temperature conditions of 600-1400° C. in a series of formation steps including formation of a p-type layer and an n-type layer. GaN is used in the near infrared light-emitting semiconductor element, and said near infrared light-emitting semiconductor element includes an active layer sandwiched between an n-type layer and a p-type layer on a substrate.
    Type: Application
    Filed: February 28, 2022
    Publication date: September 1, 2022
    Applicant: OSAKA UNIVERSITY
    Inventors: Shuhei ICHIKAWA, Naoki YOSHIOKA, Yasufumi FUJIWARA, Jun TATEBAYASHI
  • Publication number: 20210399175
    Abstract: The purpose of the present invention is to provide a technique of manufacturing a nitride semiconductor layer with which, when producing a semiconductor device by forming a nitride semiconductor layer on off-angle inclined substrate, it is possible to stably supply high-quality semiconductor devices by preventing occurrence of a macro step using a material that is not likely to occur lattice strains or crystal defects by mixing with GaN and does not require continuous addition; and provided is a nitride semiconductor device which comprises a nitride semiconductor layer formed on a substrate, wherein the substrate is inclined at an off angle, a rare earth element-added nitride layer to which a rare earth element is added is formed on the substrate as a primed layer, and a nitride semiconductor layer is formed on the rare earth element-added nitride layer.
    Type: Application
    Filed: August 30, 2019
    Publication date: December 23, 2021
    Applicant: OSAKA UNIVERSITY
    Inventors: Shuhei ICHIKAWA, Yasufumi FUJIWARA, Jun TATEBAYASHI
  • Publication number: 20210296528
    Abstract: Provided is a display device including a light emitting unit that can emit a plurality of types of light having different wavelengths to the outside at a desired ratio with high intensity without increasing manufacturing costs in proportion to a number of pixels even when the number of pixels increases. Provided is a display device including a light emitting unit in which a plurality of types of PiN junction-type light emitting diodes that emit light having different wavelengths are arranged on the same substrate, and at least one type among the plurality of types of light emitting diodes has an active layer containing a rare earth element. Provided is a display device in which a plurality of types of light emitting diodes are sequentially stacked on the surface of a substrate, and a light emitting layer for one color is formed to overlap at least a portion of a light emitting layer for another color.
    Type: Application
    Filed: June 9, 2021
    Publication date: September 23, 2021
    Applicant: OSAKA UNIVERSITY
    Inventors: Yasufumi FUJIWARA, Takeshi UENOYAMA, Jun TATEBAYASHI, Shuhei ICHIKAWA
  • Publication number: 20210091268
    Abstract: A color tunable light emission diode in which the color tone of the emission color changes by controlling the injection current, which has an active layer sandwiched between a p-type layer and an n-type layer on a substrate, and the active color layer is formed by doping Eu and Mg to an AlGaInN-based material which is GaN, InN, AlN or a mixed crystal of any two or more of them; and a micro LED display, wherein its display unit is formed by integrating image pixels having the above color tunable light emission diode are provided; and a light emitting semiconductor device technology capable of providing an ultra-small and high definition micro LED display can be provided.
    Type: Application
    Filed: April 14, 2020
    Publication date: March 25, 2021
    Inventors: Volkmar Dierolf, Brandon Mitchell, Ruoqiao Wei, Yasufumi Fujiwara, Tomasz Gregorkiewicz, Shuhei Ichikawa, Jun Tatebayashi, Dolf Timmerman
  • Publication number: 20130270517
    Abstract: A superlattice structure includes a plurality of quantum-dot nanowires extending in a substantially vertical direction from a plane region. The quantum-dot nanowires have a structure of barrier layers and quantum-dot layers alternately stacked on the plane region, and the quantum-dot nanowires are substantially the same in diameter in a stacking direction and substantially uniformly arranged at an area density of 4 nanowires/?m2 or more.
    Type: Application
    Filed: February 27, 2013
    Publication date: October 17, 2013
    Applicants: The University of Tokyo, SHARP KABUSHIKI KAISHA
    Inventors: Tomohiro NOZAWA, Yasuhiko ARAKAWA, Jun TATEBAYASHI
  • Patent number: 5193997
    Abstract: An apparatus for preheating a granular material having a suspension preheater including a plurality of stages of cyclones arranged above a calcination furnace such that the granular material is preheated by waste gas from the calcination furnace as the granular material passes through the suspension preheater. The apparatus has a precalciner of fluidized-bed type or spouted-bed type connected, in place of a duct used in conventional apparatus, between a collecting cyclone directly connected to be calcination furnace and a first cyclone constituting the most downstream stage.
    Type: Grant
    Filed: June 24, 1991
    Date of Patent: March 16, 1993
    Assignees: Kawasaki Jukogyo Kabushiki Kaisha, Maruo Calcium Co., Ltd.
    Inventors: Mikio Aoyama, Isao Hashimoto, Jun Tatebayashi