Abstract: The present invention relates to compositions based on zirconium oxide and cerium oxide that exhibit a sufficiently high specific surface area after calcination and a low maximum reduction temperature of the oxide after calcination. Compositions of the present invention may be notably used in various catalytic systems, such as for the treatment of exhaust gases from internal combustion engines.

Abstract: A laser lighting module includes a base part, a laser diode which is a blue laser device, a substrate with which the laser diode is in contact, a ceramic phosphor which reflects light entering from the laser diode to thereby change a direction of the light and is excited by the light to generate yellow fluorescence, and a lens for adjusting luminous intensity distribution of light emitted from the ceramic phosphor. The substrate is formed of a material which is thin and has excellent thermal conductivity, and is in surface contact with the laser diode and the base part. In the laser lighting module, since the substrate serves as a device heat radiator, it is possible to easily remove the heat generated by the laser diode.

Abstract: A lighting apparatus includes a laser lighting module, an LED lighting module, and a sensor module. The laser lighting module includes a base part, a laser diode mounted on a substrate fixed on the base part, a ceramic phosphor upon which a blue laser light from the laser diode is incident, and a lens for adjusting luminous intensity distribution of light emitted from the ceramic phosphor, and is mounted on a module mount part of a mount body part. The LED lighting module and the sensor module are also mounted on other module mount parts of the mount body part, respectively. Thus, by mounting various combinations of the laser lighting modules and the LED lighting modules on the mount body part provided with a plurality of module mount parts, it is possible to manufacture lighting apparatuses for various uses at low cost.

Abstract: There is provided wiring device for optical fiber capable of increasing the performance of construction work. A cover 2 is disposed in an aperture formed at front surface of the plug receptacle main body 1, the upper end thereof is rotatably supported to the plug receptacle main body 1, and a receptacle 3 is attached to the rear surface side of the cover 2. The receptacle 3 has a plug connection hole facing an outer surface side of a building at least at a used state and a plug connection portion into which a first optical-fiber plug being attached to the optical fiber cable wired to the inside of the building is inserted and connected, and optically connects the first optical fiber being connected to the plug connection portion and a second optical-fiber plug inserted from the outer surface side of the building through the plug connection hole.

Abstract: There is provided wiring device for optical fiber capable of increasing the performance of construction work. A cover 2 is disposed in an aperture formed at front surface of the plug receptacle main body 1, the upper end thereof is rotatably supported to the plug receptacle main body 1, and a receptacle 3 is attached to the rear surface side of the cover 2. The receptacle 3 has a plug connection hole facing an outer surface side of a building at least at a used state and a plug connection portion into which a first optical-fiber plug being attached to the optical fiber cable wired to the inside of the building is inserted and connected, and optically connects the first optical fiber being connected to the plug connection portion and a second optical-fiber plug inserted from the outer surface side of the building through the plug connection hole.

Abstract: A light emitting diode and its array having improved light emitting efficiency are disclosed. A first layer of a semiconductor material of a first conductivity type and a second layer of a semiconductor material of a second conductivity type are formed on one surface of a substrate of a semiconductor material of the first conductivity type. A first electrode is formed on the second layer and a second electrode is formed on a surface of the substrate opposite the one surface. From the side of the first electrode a light which is not absorbed in the first and second semiconductor layers, but is absorbed by the first electrode, is directed through the first and second layers and the substrate to selectively alloy the interface between the substrate and the other electrode. This forms a non-alloyed region between the second electrode and the substrate directly opposite the first electrode and alloyed regions along each side of the non-alloyed region.