Abstract: A method for preparing heat-conductive cement slurry for well cementation includes the following steps: S1, uniformly mixing sodium 1-butanesulfonate, sodium dodecyl diphenyl ether disulfonate and polyvinylpyrrolidone to obtain an admixture; S2, dissolving the admixture in deionized water and stirring to obtain a dispersant solution; S3, adding graphite to the dispersant solution and stirring to obtain a graphite dispersion; S4, stirring cement and deionized water in a slurry cup to obtain cement slurry; and S5, mixing and stirring the graphite dispersion and the cement slurry to obtain the heat-conductive cement slurry. The heat-conductive cement slurry can effectively improve the heat conductivity coefficient of set cement, and significantly improve the heat conductivity of the set cement, and has a broad market application prospect.

Abstract: Embodiments of the present disclosure provide a patterning method and a semiconductor structure. The method includes: providing a substrate, wherein the substrate includes adjacent storage regions and peripheral circuit regions; forming, on the substrate, a pattern transfer layer, the pattern transfer layer having a plurality of first hard masks, wherein the first hard masks extend along a first direction and are spaced apart from each other; forming a barrier layer on the pattern transfer layer; forming, on the barrier layer, a plurality of second hard masks, the plurality of second hard masks extending along a second direction, wherein the second hard masks are spaced apart from each other, and the second hard masks are located in the storage regions and second hard masks close to the peripheral circuit regions have structural defects.

Abstract: This invention relates to an apparatus for conducting immunoassay test. The apparatus includes a groove unit having a groove along a vertical direction configured to hold a rod-shaped portion of a probe along the vertical direction, and a push pin configured to move along a horizontal direction, the push pin being capable of residing at a first position and a second position. A tip of the push pin is capable of pressing the rod-shaped portion of the probe against the groove when the push pin resides at the first position. The distance between the tip of the push pin and the groove is larger than a diameter of the rod-shaped portion of the probe when the push pin resides at the second position.

Abstract: Provided is a formation method of a semiconductor structure, including: providing a substrate having a first region and a second region, a plurality of discrete through holes being formed in the substrate, an arrangement density of the through holes in the first region being greater than that in the second region; forming a sacrificial layer filling the through holes; etching some thickness of the substrate around the sacrificial layer to form openings, the openings surrounding the sacrificial layer, a depth of the opening being less than a depth of the through hole in a direction perpendicular to a surface of the substrate; and removing the sacrificial layer, the openings communicating with the corresponding through holes to form trenches.

Abstract: The present disclosure discloses a capacitor structure and its formation method and a memory. The method includes: providing a substrate; forming an electrode support structure on the substrate in a stacking fashion, wherein the electrode support structure includes at least a first support layer on its top, a capacitor hole is formed at intervals within the electrode support structure and extends upwards in a direction perpendicular to a surface of the substrate; forming, within the capacitor hole, an electrode post and an electrode layer extending from the electrode post to the upper surface of the first support layer; removing the electrode layer; removing the first support layer; forming a dielectric layer on the top of the electrode support structure, wherein the dielectric layer covers the top of the electrode post, and an outer peripheral wall of the top of the electrode post is connected with the dielectric layer.

Abstract: A support stand for photography includes a support main body having supporting ends and a mounting end and an adapting device provided at the mounting end. The supporting ends are formed on supporting legs of the support main body. The supporting legs can be unfolded to allow two adjacent supporting ends to move away from each other. The supporting legs can be folded to allow the two adjacent supporting ends to move close to each other and form a gap between two adjacent supporting legs. The adapting device includes a fixed seat provided with an adapting structure for mounting a first photographic equipment and a clamping seat configured to clamp a second photographic equipment. The clamping seat is rotatably connected to the fixed seat. The clamping seat can rotate toward a side where the supporting ends are located to be accommodated in the gap between the two adjacent supporting legs.

Abstract: Provided are a method and apparatus for determining a blockage of a filter of a clothes dryer and a clothes dryer. The clothes dryer includes a motor. The method includes following steps. An actual rotational speed of the motor is acquired, and an electrical parameter corresponding to a rotational speed range to which the actual rotational speed belongs is determined as a first threshold corresponding to the actual rotational speed; an actual clothes volume in the clothes dryer is acquired, and the first threshold is corrected according to a correction coefficient corresponding to a clothes volume range to which the actual clothes volume belongs so that a second threshold is obtained; and an actual electrical parameter of the motor is acquired, and when it is detected that the actual electrical parameter is less than the second threshold, it is determined that the filter of the clothes dryer is blocked.

Abstract: Dental appliances and methods for expanding the lower dental arch. The appliances may be removable mandibular expander devices for efficient arch expansion while being comfortable to wear and easy to use. The appliances may include a lingual portion that is shaped and sized to apply an expansion force to lingual surfaces of one or more teeth. The shape and size of the lingual portion may be configured to distribute the forces among posterior and/or anterior teeth.

Abstract: The present invention discloses a extra thick hot rolled H section steel and a production method therefor. The extra thick hot rolled H section steel contains, by mass, the following chemical components: 0.04-0.11% of C, 0.10-0.40% of Si, 0.40-1.00% of Mn, 0.40-1.00% of Cr, 0.10-0.40% of Cu, 0.020-0.060% of Nb, 0.040-0.100% of V, 0.010-0.025% of Ti, 0.010-0.030% of Al, 0.0060-0.0120% of N, not more than 0.015% of P, not more than 0.005% of S, not more than 0.0060% of O, and the balance Fe and trace residual elements, wherein 0.090%?Nb+V+Ti?0.170%, 6.5?(V+Ti)/N?10.5, and 0.30%?CEV?0.48%. The extra thick hot rolled H section steel has a flange thickness of 90 mm-150 mm, has excellent comprehensive mechanical properties, and can well meet the needs for heavy supporting structural parts of high-rise buildings, large squares, bridge structures, etc.

Abstract: The invention provides a method for evaluating deep-buried tunnel blasting parameters, and belongs to the technical field of mine engineering. The method comprises: setting multiple diverse blasting schemes; selecting a plurality of test sections with the same geological characteristics, the number of the test sections corresponding to the number of the blasting schemes; blasting the test sections using the blasting schemes, and obtaining diversified monitoring data of each test section; and comparing the diversified monitoring data to select the optimal blasting schemes for the test sections. According to the method for evaluating the deep-buried tunnel blasting parameters, by implementing different blasting schemes in test sections with the same geological characteristics, diversified monitoring data of the test sections are obtained and compared to select the optimal blasting schemes for the test sections, so as to ensure the safety and quality of blasting excavation of deep-buried tunnels.

Abstract: The method for manufacturing the semiconductor structure includes: providing a substrate, and forming contact holes in the substrate; depositing a metal at a bottom of each contact hole, and performing a reverse sputtering treatment to form a metal layer; in the reverse sputtering treatment, metal atoms or metal ions are sputtered onto at least a part of a side wall of each contact hole; performing a annealing treatment, to cause the substrate reacts with the metal layer to form a metal silicide layer.

Abstract: A seed soaking agent for reducing Cd content of rice and a low-labor intensity and simple method for reducing Cd content of rice are disclosed. The method includes mixing a seed and a seed soaking agent, and soaking the seed, to obtain a soaked seed; sowing the soaked seed, and reaping to obtain rice with a low Cd content, wherein an active ingredient of the seed soaking agent includes a trace element required by plants, the trace element includes selenium element, silicon element, zinc element or iron element, or a mixture of selenium element and iron element, a mixture of selenium element and silicon element, or a mixture of selenium element and zinc element.

Abstract: Novel organometallic complexes having a structure of Formula (I) that are useful in organic light emitting devices are disclosed.

Abstract: A method for manufacturing a semiconductor structure includes: providing a base; forming multiple discrete first mask layers on the base; forming multiple sidewall layers, in which each sidewall layer is configured to encircle one of the first mask layers, and each sidewall layer is connected to closest sidewall layers, the side walls, away from the first mask layers, of multiple connected sidewall layers define initial first vias and each of the initial first vias is provided with chamfers; removing the first mask layers, and each sidewall layer defines a second via; after removing the first mask layers, forming repair layers which are located on the side walls, away from the second vias, of the sidewall layers and fill the chamfers of the initial first vias to form first vias; and etching the base along the first vias and the second vias to form capacitor holes on the base.

Abstract: The present disclosure relates to a networked ecological conservation water-saving system for urban mass green land, comprising 5-9 ecological conservation water-saving devices which are orderly arranged in the urban green land per square meter. The ecological conservation water-saving devices are arranged in a central symmetry manner. Each ecological conservation water-saving device comprises a columnar housing and an infiltrating irrigation unit. A first water storage unit is provided at the center of each infiltrating irrigation unit, and a second water storage unit is provided at the lower part of each first water storage unit. The networked ecological conservation water-saving system further comprises a first water delivery pipe network, a second water delivery pipe network, and a third water delivery pipe network.

Abstract: The present disclosure discloses a method for manufacturing a capacitor, a capacitor array structure and a semiconductor memory. The method for manufacturing a capacitor includes: providing an underlayer; forming a substrate to be etched on the underlayer; enabling a wafer to include a central area and an edge area; forming a first hard mask layer having a first pattern in the central area on the substrate to be etched; using the first hard mask layer as a mask to etch the substrate to be etched, to form capacitor holes; depositing a lower electrode layer; and sequentially forming a capacitor dielectric layer and an upper electrode layer.

Abstract: A method for manufacturing a memory includes: providing a substrate, capacitor contact pads being formed in the substrate; forming a laminated structure on the substrate, the laminated structure including a first laminated structure formed on the substrate and a second laminated structure formed on the first laminated structure; forming first through holes in the second laminated structure; forming a protective layer on side walls of the first through holes, the protective layer in the first through holes enclosing second through holes; and etching the first laminated structure along the second through holes to form third through holes, the third through holes exposing the capacitor contact pads.

Abstract: A capacitor structure and a method of preparing the same are provided. The method includes the followings. A substrate is provided. A stacked layer is formed on the substrate. A plurality of first via holes penetrating through the stacked layer are formed. The first via hole is filled with a conductive material to form a conductive pillar. A plurality of second via holes penetrating through the stacked layer are formed at a preset radius with the conductive pillar as an axis. The second via hole surrounds the conductive pillar circumferentially. The second via hole is filled with the conductive material to form an annular top electrode with a second gear.

Abstract: A laminated capacitor and a method for manufacturing the same are provided. The method includes operations of providing a substrate; forming a first isolation insulation spacer and a plurality of discrete bottom bonding pads on the substrate; forming a sub-capacitor structure on the bottom bonding pads, which comprises a plurality of discrete bottom electrodes, a plurality of discrete top electrodes, and a dielectric medium located between the bottom electrodes and the top electrodes, wherein the plurality of bottom bonding pads are respectively electrically connected with the plurality of bottom electrodes in one-to-one correspondence; and repeatedly performing an operation of forming a connection structure and the sub-capacitor structure for N times on the sub-capacitor structure, such that N connection structures and N+1 sub-capacitor structures are alternately arranged along a direction perpendicular to the substrate, wherein N is an integer greater than or equal to 1.