Abstract: A method of anisotropically dry-etching exposed substrate material on a patterned substrate is described. The patterned substrate has a gap formed in a single material made from, for example, a silicon-containing material or a metal-containing material. The method includes directionally ion-implanting the patterned structure to implant the bottom of the gap without implanting substantially the walls of the gap. Subsequently, a remote plasma is formed using a fluorine-containing precursor to etch the patterned substrate such that either (1) the walls are selectively etched relative to the floor of the gap, or (2) the floor is selectively etched relative to the walls of the gap. Without ion implantation, the etch operation would be isotropic owing to the remote nature of the plasma excitation during the etch process.

Abstract: Embodiments of the present disclosure relate to precision material modification of three dimensional (3D) features or advanced processing techniques. Directional ion implantation methods are utilized to selectively modify desired regions of a material layer to improve etch characteristics of the modified material. For example, a modified region of a material layer may exhibit improved etch selectivity relative to an unmodified region of the material layer. Methods described herein are useful for manufacturing 3D hardmasks which may be advantageously utilized in various integration schemes, such as fin isolation and gate-all-around, among others. Multiple directional ion implantation processes may also be utilized to form dopant gradient profiles within a modified layer to further influence etching processes.

Abstract: A method for performing a search in a browser is provided. The method includes receiving one or more keywords entered in a current search engine and searching data from the current search engine based on the entered keywords. The method also includes displaying a search engine results page from the current search engine to a user and displaying alternative search engines when detecting that an operation event of the user in the search engine results page meets preset switching criteria. Further, the method includes extracting a search web address template corresponding to an alternative search engine selected by the user and loading the entered keywords into the search web address template corresponding to the selected alternative search engine to search data from the alternative search engine. In addition, the method includes displaying a search engine results page from the selected alternative search engine.

Abstract: Methods for forming air gaps in an interconnection structure with desired materials formed on different locations of the interconnection structure using an ion implantation process to define an etching boundary followed by an etching process for semiconductor devices are provided. In one embodiment, a method for forming air gaps in an interconnection structure on a substrate, the method includes implanting ions in a first region of an insulating material disposed on a substrate, leaving a second region without implanted ions, the second region having a first surface interfaced with the first region and a second surface interfaced with the substrate, and performing an etching process to selectively etch the second region away from the substrate, forming an air gap between the first region and the substrate.

Abstract: A screen unlocking method for a mobile terminal, includes: providing an icon on the touch screen that indicates the mobile terminal is in a lock state; receiving an input event of a user on the touch screen, the input event comprising a rotating operation on the icon; detecting whether a rotating angle of the icon equals a unlocking angle preset in a storage system of the mobile terminal; and transitioning the mobile terminal from the lock state to an unlock state upon the condition that the rotating angle equals the unlocking angle. In the screen unlocking method and device for a mobile terminal, the shape, position, and direction of the unlocking identification are allowed to be set according to requirements from different users, thereby meeting users' personalized needs and enriching users' visual effects; in addition, the unlocking angle can be set by users, which improves user experience.

Abstract: Ion species are supplied to a workpiece comprising a pattern layer over a substrate. A material layer is deposited on the pattern layer using an implantation process of the ion species. In one embodiment, the deposited material layer has an etch selectivity to the pattern layer. In one embodiment, a trench is formed on the pattern layer. The trench comprises a bottom and a sidewall. The material layer is deposited into the trench using the ion implantation process. The material layer is deposited on the bottom of the trench in a direction along the sidewall.

Abstract: Species are supplied to a flowable layer over a substrate. A property of the flowable layer is modified by implanting the species to the flowable layer. The property comprises a density, a stress, a film shrinkage, an etch selectivity, or any combination thereof.

Abstract: Methods for forming fin structure with desired materials formed on different locations of the fin structure using an ion implantation process to define an etching stop layer followed by an etching process for manufacturing three dimensional (3D) stacking of fin field effect transistor (FinFET) for semiconductor chips are provided. In one embodiment, a method for forming a structure on a substrate includes performing an ion implantation process on a substrate having a plurality of structures formed thereon, forming an ion treated region in the structure at an interface between the ion treated region and an untreated region in the structure defining an etch stop layer, and performing a remote plasma etching process to etch the treated region from the substrate to exposed the untreated region.

Abstract: Plasma process chambers employing distribution grids having focusing surfaces thereon enabling angled fluxes to reach a substrate, and associated methods are disclosed. A distribution grid is disposed in a chamber between the plasma and a substrate. The distribution grid includes a first surface facing the substrate and a focusing surface facing the plasma. A passageway extends through the distribution grid, and is sized with a width to prevent the plasma sheath from entering therein. By positioning the focusing surface at an angle other than parallel to the substrate, an ion flux from the plasma may be accelerated across the plasma sheath and particles of the flux pass through the passageway to be incident upon the substrate. In this manner, the angled ion flux may perform thin film deposition and etch processes on sidewalls of features extending orthogonally from or into the substrate, as well as angled implant and surface modification.

Abstract: The angular ion distribution in plasma processing is controlled using a bias voltage frequency. In one example, a plasma containing gas ions is generated in a plasma chamber. The plasma sheath is modified using an aperture disposed between the plasma sheath and the workpiece so that the plasma sheath takes a shape above the aperture. An oscillating radio frequency bias voltage is generated and applied to a workpiece holder. The workpiece holder applies the bias voltage to the workpiece to generate a workpiece bias voltage with respect to the plasma to attract ions across the plasma sheath toward the workpiece. The aperture and the frequency of the bias voltage control an angle at which the ions are attracted toward the workpiece.

Abstract: A method of selectively dry etching silicon from patterned heterogeneous structures is described. The method optionally includes a plasma process prior to a remote plasma etch. The plasma process may use a biased plasma to treat some crystalline silicon (e.g. polysilicon or single crystal silicon) to form amorphous silicon. Subsequently, a remote plasma is formed using a hydrogen-containing precursor to form plasma effluents. The plasma effluents are passed into the substrate processing region to etch the amorphous silicon from the patterned substrate. By implementing biased plasma processes, the normally isotropic etch may be transformed into a directional (anisotropic) etch despite the remote nature of the plasma excitation during the etch process.

Abstract: Methods for making a nanocrystalline diamond layer are disclosed herein. A method of forming a layer can include activating a deposition gas comprising an alkane and a hydrogen containing gas at a first pressure, delivering the activated deposition gas to the substrate at a second pressure which is less than the first pressure, forming a nanocrystalline diamond layer, treating the layer with an activated hydrogen containing gas to remove one or more polymers from the surface and repeating the cycle to achieve a desired thickness.

Abstract: A method of selectively dry etching silicon from patterned heterogeneous structures is described. The method optionally includes a plasma process prior to a remote plasma etch. The plasma process may use a biased plasma to treat some crystalline silicon (e.g. polysilicon or single crystal silicon) to form amorphous silicon. Subsequently, a remote plasma is formed using a hydrogen-containing precursor to form plasma effluents. The plasma effluents are passed into the substrate processing region to etch the amorphous silicon from the patterned substrate. By implementing biased plasma processes, the normally isotropic etch may be transformed into a directional (anisotropic) etch despite the remote nature of the plasma excitation during the etch process.

Abstract: A method for sharing content between different terminals including a first terminal and a second terminal includes: performing following steps by the first terminal: acquiring a terminal list from a server, wherein each of terminals in the terminal list and the first terminal are associated with a same user account; selecting a terminal from the terminal list as the second terminal; and transmitting content to be shared and an indicator of the second terminal to the server.

Abstract: Embodiments described herein provide for a method of forming an etch selective hardmask. An amorphous carbon hardmask is implanted with various dopants to increase the hardness and density of the hardmask. The ion implantation of the amorphous carbon hardmask also maintains or reduces the internal stress of the hardmask. The etch selective hardmask generally provides for improved patterning in advanced NAND and DRAM devices.

Abstract: A forced cooling circulation system for drilling mud, which includes a refrigeration unit (1), a secondary refrigerant tank (4), a coaxial convection heat exchanger (12) for mud and a mud pond (17), is disclosed. The refrigeration unit (1) is in connection with the secondary refrigerant tank (4) and the coaxial convection heat exchanger (12) for mud via a pump (2), and the coaxial convection heat exchanger (12) for mud is in connection with the mud pond (17) via a pump (15) and pipelines. Heat exchange tubes of the coaxial convection heat exchanger (12) for mud are disposed as a double-layer structure or a multi-layer structure, and the inner heat exchange tubes (23) are mounted inside of the outer heat exchange tubes (25). The secondary refrigerant or the mud is circulated in the annular space between the inner heat exchange tubes (23) and the outer heat exchange tubes (25), and the mud or the secondary refrigerant is circulated in the inner tubes (23).

Abstract: A screen unlocking method for a mobile terminal, includes: providing an icon on the touch screen that indicates the mobile terminal is in a lock state; receiving an input event of a user on the touch screen, the input event comprising a rotating operation on the icon; detecting whether a rotating angle of the icon equals a unlocking angle preset in a storage system of the mobile terminal; and transitioning the mobile terminal from the lock state to an unlock state upon the condition that the rotating angle equals the unlocking angle. In the screen unlocking method and device for a mobile terminal, the shape, position, and direction of the unlocking identification are allowed to be set according to requirements from different users, thereby meeting users' personalized needs and enriching users' visual effects; in addition, the unlocking angle can be set by users, which improves user experience.

Abstract: An electronic device with one or more processors and memory displays a web page in a web browser and detects a user input to extract data from the web page. In response to detecting the input, the device: identifies multimedia items by analyzing source code of the web page; categorizes the multimedia items into multimedia types; and replaces the web page with displaying a user interface for the multimedia items, including: a first region with a first icon corresponding to a first plurality of multimedia items of a first multimedia type and a first set of affordances for performing operations with the first plurality of multimedia items; and a second region with a second icon corresponding to a second plurality of multimedia items of a second multimedia type and a second set of affordances for performing operations with the second plurality of multimedia items.

Abstract: A method and system for displaying icons on a user interface of a smart device are disclosed. The method includes obtaining a webpage address and checking security of the webpage linked to the webpage address. Further, the method includes displaying a first icon at a pre-determined position, the first icon indicating that the security check is in progress; obtaining a speed for loading the webpage and a speed for the security check; and adjusting icons displayed at the pre-determined position based on the speed for loading the webpage and the speed for the security check. The method and system consistent with the present disclosure may improve the user experience of smartphone users.

Abstract: Provided methods of etching and/or patterning films. Certain methods comprise exposing at least part of a film on a substrate, the film comprising one or more of HfO2, HfBxOy, ZrO2, ZrBxOy, to a plasma comprising BCl3 and argon to etch away said at least part of the film. Certain other methods relate to patterning substrates using said methods of etching films.