Abstract: The present disclosure relates to a magneto-resistive random access memory (MRAM) cell having an extended upper electrode, and a method of formation. In some embodiments, the MRAM cell has a magnetic tunnel junction (MTJ) arranged over a conductive lower electrode. A conductive upper electrode is arranged over the magnetic tunnel junction. Below the conductive lower electrode is a first conductive via structure in a first dielectric layer. Below the conductive via structure is a discrete conductive jumper structure in a second dielectric layer. A dielectric body of a third dielectric material that is different from the first dielectric material and the second dielectric material extends vertical from the first dielectric layer at least partially into the second dielectric layer.

Abstract: An air intake device has a base seat, a hollow main body disposed on the base seat, and a hollow cover seat disposed on the hollow main body. An intake guide pipe is connected to the connection pipe. A plurality of L-shaped plates are disposed in the hollow cover seat. An upper magnet is disposed in the hollow cover seat. A lower magnet is disposed in the hollow main body. The lower magnet has a taper lower portion. The hollow main body has an upper interior, an inner thread, a lower interior, a lower groove, and an upper groove. A hollow adjustment screw is inserted in the hollow main body. The hollow adjustment screw has a center hole and an annular recess receiving a seal ring. The base seat receives an air cleaner.