Patents by Inventor Jun Yong Bak

Jun Yong Bak has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240120432
    Abstract: The present application relates to a method for manufacturing a transparent solar cell comprising a n-type semiconductor, a light absorption layer, and a p-type semiconductor including SiC.
    Type: Application
    Filed: March 16, 2023
    Publication date: April 11, 2024
    Inventors: Chan Uk JON, Jun Yong BAK, Jae Kwang YOON
  • Publication number: 20240120433
    Abstract: The present application relates to a manufacturing method of silicon carbide thin film for transparent solar cell, the method comprises forming a light-absorbing layer on a semiconductor substrate by applying plasma to a carbon source and a silicon source.
    Type: Application
    Filed: March 16, 2023
    Publication date: April 11, 2024
    Inventors: Chan Uk JON, Jun Yong BAK, Jae Kwang YOON
  • Patent number: 8809857
    Abstract: Provided are a thin film transistor in which an oxide semiconductor combined with a nitride containing boron or aluminum is applied to a channel layer and a method of fabricating the same. The thin film transistor in which an oxide semiconductor combined with a nitride containing boron or aluminum is applied to a channel layer exhibits significantly improved mobility and increased stability at a high temperature.
    Type: Grant
    Filed: September 17, 2013
    Date of Patent: August 19, 2014
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Woo Seok Cheong, Sung Mook Chung, Jun Yong Bak
  • Publication number: 20140008650
    Abstract: Provided are a thin film transistor in which an oxide semiconductor combined with a nitride containing boron or aluminum is applied to a channel layer and a method of fabricating the same. The thin film transistor in which an oxide semiconductor combined with a nitride containing boron or aluminum is applied to a channel layer exhibits significantly improved mobility and increased stability at a high temperature.
    Type: Application
    Filed: September 17, 2013
    Publication date: January 9, 2014
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Woo Seok CHEONG, Sung Mook CHUNG, Jun Yong BAK
  • Patent number: 8563356
    Abstract: Provided are a thin film transistor in which an oxide semiconductor combined with a nitride containing boron or aluminum is applied to a channel layer and a method of fabricating the same. The thin film transistor in which an oxide semiconductor combined with a nitride containing boron or aluminum is applied to a channel layer exhibits significantly improved mobility and increased stability at a high temperature.
    Type: Grant
    Filed: September 21, 2010
    Date of Patent: October 22, 2013
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Woo Seok Cheong, Sung Mook Chung, Jun Yong Bak
  • Publication number: 20110140097
    Abstract: Provided are a thin film transistor in which an oxide semiconductor combined with a nitride containing boron or aluminum is applied to a channel layer and a method of fabricating the same. The thin film transistor in which an oxide semiconductor combined with a nitride containing boron or aluminum is applied to a channel layer exhibits significantly improved mobility and increased stability at a high temperature.
    Type: Application
    Filed: September 21, 2010
    Publication date: June 16, 2011
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Woo Seok CHEONG, Sung Mook Chung, Jun Yong Bak