Abstract: A chemical-mechanical planarization composition containing surface-modified abrasive particles such as silica where at least a portion of the surface of the particles has bound thereto a surface-modifying aluminum-containing stabilizer and fluoride that is used to polish semiconductor substrates.

Abstract: A composition and an associated method for chemical mechanical planarization (or other polishing) are described. The composition includes a stabilizer-metal-vinyl pyridine polymer surface-modified colloidal abrasive (e.g., silica) and an oxidizing agent (e.g., hydrogen peroxide), where the metal is a Fenton's reaction metal. The method includes applying the composition to a substrate to be polished (e.g., chemical-mechanical polishing (CMP)), such as substrates containing tungsten or copper and dielectrics layers that being subjected to tungsten or copper CMP for planarization.

Abstract: A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition contains a boron surface-modified abrasive, a nitro-substituted sulfonic acid compound, a per-compound oxidizing agent, and water. The composition affords high removal rates for barrier layer materials in metal CMP processes. The composition is particularly useful in conjunction with the associated method for metal CMP applications (e.g., step 2 copper CMP processes).

Abstract: A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition contains a ketooxime compound and water. The composition may also contain an abrasive and/or a per compound oxidizing agent. The composition affords tunability of removal rates for metal, barrier material, and dielectric layer materials in metal CMP. The composition is particularly useful in conjunction with the associated method for metal CMP applications (e.g., step 2 copper CMP processes).

Abstract: A chemical mechanical polishing composition contains 1) water, 2) optionally an abrasive material, 3) an oxidizer, preferably a per-type oxidizer, 4) a small amount of soluble metal-ion oxidizer/polishing accelerator, a metal-ion polishing accelerator bound to particles such as to abrasive particles, or both; and 5) at least one of the group selected from a) a small amount of a chelator, b) a small amount of a dihydroxy enolic compound, and c) a small amount of an organic accelerator. Ascorbic acid in an amount less than 800 ppm, preferably between about 100 ppm and 500 ppm, is the preferred dihydroxy enolic compound. The polishing compositions and processes are useful for substantially all metals and metallic compounds found in integrated circuits, but is particularly useful for tungsten.

Abstract: A composition and an associated method for chemical mechanical planarization (or other polishing) are described. The composition includes a surface-modified abrasive modified with at least one stabilizer and at least one catalyst differing from the at least one stabilizer. The composition can further include a medium containing the abrasive and an oxidizing agent (e.g., hydrogen peroxide), wherein the at least one catalyst is adapted to catalyze oxidation of a substrate by the oxidizing agent. Preferably, the abrasive is alumina, titania, zirconia, germania, silica, ceria and/or mixtures thereof, the stabilizer is B, W and/or Al, and the catalyst is Cu, Fe, Mn, Ti, W and/or V. Both the stabilizer and the catalyst are immobilized on the abrasive surface. The method includes applying the composition to a substrate to be polished, such as substrates containing W, Cu and/or dielectrics.

Abstract: A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition comprises a branched-alkylphenol-substituted-benzotriazole. The composition affords low dishing, high metal removal rates, and high selectivities for removal of copper in relation to barrier layer materials and dielectric materials whilst minimizing local erosion effects in CMP. The composition may further comprise an oxidizing agent in which case the composition is particularly useful in conjunction with the associated method for metal CMP applications (e.g., copper CMP). The composition may also further comprise an isothiazoline compound to synergistically impart lower dishing levels during CMP processing.

Abstract: A low solids-content slurry for polishing (e.g., chemical mechanical planarization) of substrates comprising a dielectric and an associated method using the slurry are described. The slurry and associated method afford high removal rates of dielectric during polishing even though the slurry has low solids-content. The slurry comprises a bicarbonate salt, which acts as a catalyst for increasing removal rates of dielectric films during polishing of these substrates.

Abstract: A CMP composition having: a fluid comprising water and at least one oxidizing compound that produces free radicals when contacted with an activator; and a plurality of particles having a surface and comprising at least one activator selected from ions or compounds of Cu, Fe, Mn, Ti, or mixtures thereof disposed on said surface, wherein at least a portion of said surface comprises a stabilizer. Preferred activators are selected from inorganic oxygen-containing compounds of B, W, Al, and P, for example borate, tungstate, aluminate, and phosphate. The activators are preferably ions of Cu or Fe. Surprisingly, as little as 0.2 ppm and 12 ppm of activator is useful, if the activator-containing particles are suspended in the fluid as a slurry. Advantageously, certain organic acids, and especially dihydroxy enolic acids, are included in an amount less than about 4000 ppm. Advantageously, activator is coated onto abrasive particles after the particles have been coated with stabilizer.

Abstract: A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition contains an abrasive, benzenesulfonic acid compound, a per-compound oxidizing agent, and water. The composition affords tunability of removal rates for metal, barrier layer materials, and dielectric layer materials in metal CMP processes. The composition is particularly useful in conjunction with the associated method for metal CMP applications (e.g., step 2 copper CMP processes).

Abstract: A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition contains an abrasive, a dielectric protector comprising a polyvinylpyridine-N-oxide polymer, an oxiding agent, and water. The composition affords minimization of local erosion effects and possesses high selectivities for metal and barrier material removal in relation to dielectric layer materials in metal CMP. The composition is particularly useful in conjunction with the associated method for metal CMP applications (e.g., step 1 copper CMP processes and step 2 copper CMP processes).

Abstract: A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition comprises an abrasive and a tricine-type or bicine-type compound. The composition possesses high selectivities for removal of copper in relation to tantalum and dielectric materials whilst minimizing local dishing and erosion effects in CMP. The composition may further comprise an oxidizing agent in which case the composition is particularly useful in conjunction with the associated method for metal CMP applications (e.g., copper CMP).

Abstract: A composition and an associated method for chemical mechanical planarization (or other polishing) are described. The composition includes a surface-modified abrasive modified with at least one stabilizer and at least one catalyst differing from the at least one stabilizer. The composition can further include a medium containing the abrasive and an oxidizing agent (e.g., hydrogen peroxide), wherein the at least one catalyst is adapted to catalyze oxidation of a substrate by the oxidizing agent. Preferably, the abrasive is alumina, titania, zirconia, germania, silica, ceria and/or mixtures thereof, the stabilizer is B, W and/or Al, and the catalyst is Cu, Fe, Mn, Ti, W and/or V. Both the stabilizer and the catalyst are immobilized on the abrasive surface. The method includes applying the composition to a substrate to be polished, such as substrates containing W, Cu and/or dielectrics.

Abstract: A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition comprises an abrasive and a polyvinylpyridine-N-oxide polymer. The composition possesses high selectivities for metal and barrier material removal in metal CMP. The composition may further comprise an oxidizing agent in which case the composition is particularly useful in conjunction with the associated method for metal CMP applications (e.g., copper CMP).

Abstract: A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition comprises an organometallic-modified colloidal abrasive and a nitrogen-containing polymer compound (e.g., a polyalkyleneimine, such as polyamidopolyethyleneimine). The composition possesses both high stability towards gelling and/or solids formation and high selectivity for metal removal in metal CMP. The composition may further comprise an oxidizing agent in which case the composition is particularly useful in conjunction with the associated method for metal CMP applications (e.g., copper CMP).

Abstract: A composition and associated method for chemical mechanical planarization (or other polishing) are described which afford high tantalum to copper selectivity in copper CMP and which are tunable (in relation to polishing performance). The composition comprises an abrasive and an N-acyl-N-hydrocarbonoxyalkyl aspartic acid compound and/or a tolyltriazole derivative.

Abstract: A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition comprises an abrasive and a tricine-type or bicine-type compound. The composition possesses high selectivities for removal of copper in relation to tantalum and dielectric materials whilst minimizing local dishing and erosion effects in CMP. The composition may further comprise an oxidizing agent in which case the composition is particularly useful in conjunction with the associated method for metal CMP applications (e.g., copper CMP).

Abstract: A composition and associated methods for chemical mechanical planarization (or other polishing) are described. The composition may comprise an abrasive and a dispersed hybrid organic/inorganic particle. The composition may further comprise an alkyne compound. Two different methods for chemical mechanical planarization are disclosed. In one method (Method A), the CMP slurry composition employed in the method comprises comprise an abrasive and a dispersed hybrid organic/inorganic particle. In another method (Method B), the CMP slurry composition employed in the method comprises comprise an abrasive and an alkyne compound. The composition may further comprise an oxidizing agent in which case the composition is particularly useful in conjunction with the associated methods (A and B) for metal CMP applications (e.g., tungsten CMP).

Abstract: An additive system for polyester polymers comprising an effective amount of (i) a fatty acid amide selected from the group consisting of oleyl palmitamide, ethylene bis stearamide, ethylene bis oleomide, and stearyl erucamide; (ii) a partially or fully calcined porous poly(methylsilsequioxane); and (iii) a stabilizer comprising a primary and a secondary antioxidant.

Abstract: An electrical component employing a metalized composite film with a heat-seal layer is disclosed. The use of the heat-seal layer in the disclosed configuration allows a wound film capacitor integral with a primary coil to be made without there being a need to impregnate the wound film unit with an epoxy or other resin, thus saving substantial manufacturing time.