Patents by Inventor Juncao Bian

Juncao Bian has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230198003
    Abstract: The present application provides a composite solid state electrolyte slurry, a film, a preparation method, and an all solid state battery. The method includes: adding a polymer into a non-polar solvent and mixing the polymer and the non-polar solvent to obtain a sol; adding a solid state electrolyte powder and a lithium salt solution into the sol and mixing the solid state electrolyte powder, the lithium salt solution and the sol to obtain a composite solid state electrolyte slurry; the non-polar solvent is an organic solvent that does not react with the solid state electrolyte powder; the high shear force of the sol is used to disperse the solid state electrolyte powder and lithium salt solution, thereby the solid state electrolyte powder and the lithium salt solution are uniformly dispersed in the sol.
    Type: Application
    Filed: June 15, 2021
    Publication date: June 22, 2023
    Applicant: Southern University of Science and Technology
    Inventors: Juncao BIAN, Zhouguang LU, Yusheng ZHAO
  • Publication number: 20230110197
    Abstract: The present application provides a solid state electrolyte, a preparation method thereof, and an all solid state battery. Multi-element co-doping of lithium-rich, sodium-rich, potassium-rich anti-perovskite electrolytes on lithium sites or sodium sites or potassium sites, oxygen sites and halogen sites effectively improves the ionic conductivity of the anti-perovskite solid state electrolyte.
    Type: Application
    Filed: June 15, 2021
    Publication date: April 13, 2023
    Applicant: Southern University of Science and Technology
    Inventors: Juncao BIAN, Zhouguang LU, Yusheng ZHAO
  • Patent number: 11196036
    Abstract: A fast charge lithium ion battery capable of being charged or discharged with 80% capacity retention at C rate of at least 2C is provided in the present invention, which includes a fast charge graphite-based anode; a cathode; and a separator, wherein the anode includes an anode current collector and a fast charge graphite layer deposited on at least one surface of the anode current collector, the fast charge graphite having a lattice constant equals to or larger than 0.3374 nm, a D-band to G-band integrated area ratio (ID/IG) of 0.03 to 0.3, and a surface morphology of a plate-like crystal structure under a scanned electron microscope; the cathode includes a cathode current collector and one or more active materials deposited on at least one surface of the cathode current collector.
    Type: Grant
    Filed: October 11, 2019
    Date of Patent: December 7, 2021
    Assignee: Nano and Advanced Materials Institute Limited
    Inventors: Juncao Bian, Shengbo Lu, Chenmin Liu, Wai Yin Wong, Hong Zhao
  • Publication number: 20200044236
    Abstract: A fast charge lithium ion battery capable of being charged or discharged with 80% capacity retention at C rate of at least 2C is provided in the present invention, which includes a fast charge graphite-based anode; a cathode; and a separator, wherein the anode includes an anode current collector and a fast charge graphite layer deposited on at least one surface of the anode current collector, the fast charge graphite having a lattice constant equals to or larger than 0.3374 nm, a D-band to G-band integrated area ratio (ID/IG) of 0.03 to 0.3, and a surface morphology of a plate-like crystal structure under a scanned electron microscope; the cathode includes a cathode current collector and one or more active materials deposited on at least one surface of the cathode current collector.
    Type: Application
    Filed: October 11, 2019
    Publication date: February 6, 2020
    Inventors: Juncao BIAN, Shengbo LU, Chenmin LIU, Wai Yin WONG, Hong ZHAO
  • Patent number: 10090470
    Abstract: A method of forming a semiconductor film at pressure between 10?5 atm and 10 atm in the presence of a substrate includes (i) providing a precursor material in a reaction container; (ii) arranging the substrate on the reaction container such that a conductive surface of the substrate is facing towards the precursor material; and (iii) conducting a heat treatment to deposit a semiconductor layer on the conductive surface of the substrate. A semiconductor film is obtained from this method and a device comprising such semiconductor film is also provided.
    Type: Grant
    Filed: February 22, 2016
    Date of Patent: October 2, 2018
    Assignee: CITY UNIVERSITY OF HONG KONG
    Inventors: Ruiqin Zhang, Juncao Bian
  • Publication number: 20170244037
    Abstract: A method of forming a semiconductor film at pressure between 10?5 atm and 10 atm in the presence of a substrate includes (i) providing a precursor material in a reaction container; (ii) arranging the substrate on the reaction container such that a conductive surface of the substrate is facing towards the precursor material; and (iii) conducting a heat treatment to deposit a semiconductor layer on the conductive surface of the substrate. A semiconductor film is obtained from this method and a device comprising such semiconductor film is also provided.
    Type: Application
    Filed: February 22, 2016
    Publication date: August 24, 2017
    Inventors: Ruiqin ZHANG, Juncao Bian