Abstract: A light emitting device package including a first frame having first and second through holes; a light emitting device including first and second electrode pads; a first resin disposed between the first frame and the light emitting device; and a conductive material disposed in the first through hole and the second through hole. Further, the first electrode pad of the light emitting device overlaps with the first through hole and the second electrode pad of the light emitting device overlaps with the second through hole; the first electrode pad and the second electrode pad are spaced apart from each other; and the conductive material in the first and second through holes respectively contacts the first and second electrode pads, and a first side surface of the first electrode pad and a second side surface of the second electrode pad facing the first side surface contact the first resin.

Abstract: A light emitting device package is discussed.

Abstract: A light emitting device package is discussed. The light emitting device package includes a first frame having a first through hole; a second frame having a second through hole; a connecting frame diagonally extending in the light emitting device package from the first frame to the second frame; a first light emitting device including a first electrode pad and a second electrode pad, the second electrode pad being disposed on the first through hole of the first frame; and a second light emitting device including a third electrode pad and a fourth electrode pad, the third electrode pad being disposed on the second through hole of the second frame.

Abstract: A thin film transistor substrate according to an embodiment includes: a substrate; and a thin film transistor disposed on the substrate, wherein the thin film transistor includes a channel layer including a nitride-based semiconductor layer, a source electrode electrically connected to a first region of the channel layer, a drain electrode electrically connected to a second region of the channel layer, a gate electrode disposed on the channel layer, and a depletion forming layer disposed between the channel layer and the gate electrode.

Abstract: A light emitting device package according to an embodiment includes: a body including an upper surface, a lower surface, and a side surface connecting the upper surface and the lower surface, and first and second openings passing through the upper surface and the lower surface; and a light emitting device including first and second bonding portions disposed on the first and second openings, respectively, wherein the body may include a recess provided on the lower surface, the recess may be vertically overlapped with the first opening and the second opening, and the recess may be exposed at the side surface of the body.

Abstract: The embodiment relates to a semiconductor device package, a method of manufacturing the semiconductor device package, and a light source apparatus. According to another embodiment, there is provided a light emitting device package which includes a package body (110) including a frame (111, 112) and a body (113); a light emitting device (120) including first and second bonding parts (121, 122) and disposed on the body (113); a reflective resin layer disposed between the light emitting device and a side surface of a cavity (C) formed in the body; a transparent resin layer on the light emitting device; and a phosphor layer disposed on the transparent resin layer while being spaced apart from the light emitting device.

Abstract: A semiconductor device, according to one embodiment, may comprise: a light-emitting structure comprising a first conductivity type semiconductor layer, an active layer disposed on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer disposed on the active layer; a transistor disposed on the light-emitting structure and comprising a semiconductor layer, a source electrode, a gate electrode, and a drain electrode; a second electrode disposed on the second conductivity type semiconductor layer and electrically connected to the drain electrode and the second conductivity type semiconductor layer; a first bonding pad disposed on the light-emitting structure and electrically connected to the first conductivity type semiconductor layer; a second bonding pad disposed on the transistor and electrically connected to the source electrode; and a third bonding pad disposed on the transistor and electrically connected to the gate electrode.

Abstract: The semiconductor element according to an embodiment comprises: a light-emitting structure comprising a p-type semiconductor layer, an active layer disposed under the p-type semiconductor layer, and an n-type semiconductor layer disposed under the active layer; a protective layer disposed on the side surface and upper surface of the light-emitting structure; a p-type contact layer disposed over the p-type semiconductor layer; and an n-type contact layer disposed under the n-type semiconductor layer, wherein: the width of the lower surface of the n-type semiconductor layer is provided greater than that of the lower surface of the p-type semiconductor layer; the width of the upper surface of the n-type contact layer is provided greater than that of the upper surface of the n-type semiconductor layer; and the angle between the lower surface of the n-type semiconductor layer and the side surface of the light-emitting structure may be 30-80 degrees.

Abstract: The embodiment relates to a semiconductor device package, a method of manufacturing the semiconductor device package, and a light source apparatus. According to another embodiment, there is provided a light emitting device package which includes a package body (110) including a frame (111, 112) and a body (113); a light emitting device (120) including first and second bonding parts (121, 122) and disposed on the body (113); a reflective resin layer disposed between the light emitting device and a side surface of a cavity (C) formed in the body; a transparent resin layer on the light emitting device; and a phosphor layer disposed on the transparent resin layer while being spaced apart from the light emitting device.

Abstract: A light emitting device package can include first and second frames spaced apart from each other; a package body including a body portion between the first and second frames; a light emitting device including first and second electrode pads; first and second through holes in the first and second frames, respectively; a first resin between the body portion and the light emitting device; and a conductive material in the first and second through holes, in which the first and second electrode pads of the light emitting device respectively overlap with the first and second through holes, the first and second electrode pads are spaced apart from each other, and the conductive material in the first and second through holes respectively contacts the first and second electrode pads, and a first side surface of the first electrode pad and a second side surface of the second electrode pad facing the first side surface both contact the first resin.

Abstract: A light emitting device package can include first and second frames spaced apart from each other; a package body including a body portion disposed between the first and second frames; a light emitting device including first and second electrode pads; a first through hole in the first frame; a second through hole in the second frame; a conductive material disposed in the first and second through holes; and an intermetallic compound layer disposed between the conductive material and the first frame, and between the conductive material and the second frame, in which the first electrode pad of the light emitting device overlaps with the first through hole in the first frame, the second electrode pad of the light emitting device overlaps with the second through hole in the second frame, and the first and second electrode pads are spaced apart from each other.

Abstract: Disclosed is a light emitting device. The light emitting device includes a light emitting semiconductor layer including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer and a second conductive semiconductor layer on the active layer. A passivation layer is disposed on a surface of a light emitting semiconductor layer. A first electrode layer is disposed on the first conductive semiconductor layer and a second electrode layer is disposed on the second conductive semiconductor layer. Plurality of protrusion parts are disposed on a top surface of the first conductive semiconductor layer.

Abstract: A thin film transistor substrate according to an embodiment includes: a substrate; and a thin film transistor disposed on the substrate, wherein the thin film transistor includes a channel layer including a nitride-based semiconductor layer, a source electrode electrically connected to a first region of the channel layer, a drain electrode electrically connected to a second region of the channel layer, a gate electrode disposed on the channel layer, and a depletion forming layer disposed between the channel layer and the gate electrode.

Abstract: A light emitting device package according to an embodiment includes: a package body; a light emitting device disposed on the package body; and an adhesive disposed between the package body and the light emitting device. The package body includes first and second openings passing through the package body on an upper surface of the package body and a recess provided to concave in a direction of a lower surface of the package body from the upper surface of the package body. The light emitting device includes a first bonding part disposed on the first opening and a second bonding part disposed on the second opening. The adhesive is provided at the recess.

Abstract: Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer, an adhesive layer contacting a top surface of the first conductive semiconductor layer, a first electrode contacting a top surface of the first conductive semiconductor and a top surface of the adhesive layer, and a second electrode contacting the second conductive semiconductor layer, wherein the adhesive layer contacting the first electrode is spaced apart from the second electrode.

Abstract: A light emitting device package includes a first frame and a second frame disposed to be spaced apart from each other; a body disposed between the first and second frames and comprising a recess; a first adhesive on the recess; a light emitting device on the first adhesive; a second adhesive disposed between the first and second frames and the light emitting device; and a resin portion disposed to surround the second adhesive and a partial region of the light emitting device.

Abstract: A light emitting device package according to an embodiment includes: a body including first and second openings passing through an upper surface of the body and a lower surface of the body; a light emitting device disposed on the body and including first and second bonding parts; and first and second conductive layers disposed under the body and electrically connected to the first and second bonding parts, respectively, wherein each of the first and second bonding parts includes a protrusion portion protruding and extending in a downwards direction within the first and second openings, respectively.

Abstract: The light emitting device package disclosed in the embodiment includes: first and second frames having first and second through holes; a body disposed between the first and second frames; a light emitting device including a first bonding pad and a second bonding pad; and a conductive part in the first and second through holes. wherein at least one of the first and second bonding pads faces the first and second frames and overlaps with the first and second through holes and includes a contact region contacting the conductive part and a first non-contact non-contacting the conducive part.

Abstract: A thin film transistor substrate according to an embodiment comprises: a support substrate; a bonding layer disposed on the support substrate; a thin film transistor disposed on the bonding layer, wherein the thin film transistor includes a channel layer containing a nitride-based semiconductor layer, a source electrode electrically connected to a first region of the channel layer, a drain electrode electrically connected to a second region of the channel layer, a gate electrode disposed below the channel layer, and a depletion forming layer disposed between the channel layer and the gate electrode; and a pixel electrode disposed on the thin film transistor and electrically connected to the drain electrode of the thin film transistor. The thin film transistor substrate according to the embodiment, and a display panel and a display device including the same have an advantage of implementing high resolution and reproducing a soft moving image by providing a high carrier mobility.

Abstract: A light emitting device including a substrate, a first conductive layer on the substrate, a second conductive layer on the first conductive layer, a metal layer on the second conductive layer, a light emitting structure on the metal layer and the second conductive layer, the light emitting structure including a first semiconductor layer containing AlGaN, an active layer, and a second semiconductor layer containing AlGaN, a first electrode on the light emitting structure, and a passivation layer disposed on a side surface of the light emitting structure.