Abstract: Proposed are a wafer heating apparatus and a wafer processing apparatus using the same. More particularly, proposed are a wafer heating apparatus having an improved structure to enable efficient cooling of a terminal block, and a wafer processing apparatus using the same. A wafer heating apparatus for heating a wafer according to one embodiment includes a heater disposed below the wafer and configured to serve as a heat source, a cooling plate disposed below the heater and configured to provide cool air, and a terminal block configured to supply power to the heater and having a lower end portion in contact with the cooling plate.

Abstract: A method of forming a transistor is provided. An upper portion of a substrate is partially removed forming a trench. An isolation layer partially fills the trench, forming active patterns of the substrate. The isolation layer has a void therein. A photoresist pattern is formed on the active patterns and the isolation layer. The active patterns and the isolation layer are partially removed using the photoresist pattern as an etching mask, thus forming a recess. A plasma treatment process is performed, removing the photoresist pattern and filling the void. A gate insulation layer and a gate electrode fill the recess.

Abstract: Provided is a side storage unit, including a cleaning chamber to receive a plurality of substrates, the cleaning chamber having a gas supplier to supply therethrough cleaning gases for removing fumes from the substrate, and a plurality of discharge openings to discharge therethrough a mixture of the fumes and the cleaning gases; a plurality of substrate holders arranged on an inner sidewall of the cleaning chamber and supporting the substrates in the cleaning chamber, each of the substrate holders having at least one gas injector connected to the gas supplier to supply the cleaning gases onto a surface of the substrate; and a discharge assembly connected to the discharge openings to discharge the mixture of the fumes and the cleaning gases.

Abstract: A method of forming a transistor is provided. An upper portion of a substrate is partially removed forming a trench. An isolation layer partially fills the trench, forming active patterns of the substrate. The isolation layer has a void therein. A photoresist pattern is formed on the active patterns and the isolation layer. The active patterns and the isolation layer are partially removed using the photoresist pattern as an etching mask, thus forming a recess. A plasma treatment process is performed, removing the photoresist pattern and filling the void. A gate insulation layer and a gate electrode fill the recess.

Abstract: A charger assembly for a wafer carrying apparatus, includes a charger for conveying wafers loaded in a plurality of grooves of a boat to a subsequent manufacturing process. The charger has a plurality of wafer guiders disposed side by side and has a first gap therebetween. The charger further includes an adjusting structure by which the first gap between the plurality of guiders is aligned with a second gap formed between groove groups of the boat. A pair of supporting members are detachably attached to the wafer guiders by fasteners to allow lateral movement of the wafers guiders to ensure correct alignment of the grooves of the boat and charger.