Patents by Inventor Jung Doo SEO
Jung Doo SEO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11969917Abstract: A silicon carbide wafer manufacturing method includes: a bending measuring step of measuring a first edge having the greatest degree of a bending at one surface of a silicon carbide ingot having one surface; a cutting start step of starting a cutting at a second edge having a distance of r×a along an edge of the one surface from the first edge in a direction parallel to or with a predetermined off angle with respect to the one surface through the wire saw, a cutting speed being decreased to a first cutting speed in the cutting start step; a cutting proceeding step in which the first cutting speed is substantially constant within a variation of about ±5% of the first cutting speed; and a finish step in which the cutting speed is increased from the first cutting speed and the cutting of the silicon carbide ingot is completed.Type: GrantFiled: January 14, 2022Date of Patent: April 30, 2024Assignee: SENIC Inc.Inventors: Jung-Gyu Kim, Kap-Ryeol Ku, Jung Doo Seo, Jung Woo Choi, Jong Hwi Park
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Patent number: 11745463Abstract: An embodiment relates to a multilayer graphite sheet with excellent electromagnetic shielding capability and thermal conductivity, and a manufacturing method therefor, wherein the multilayer graphite sheet has a multilayer structure of five or more layers in total and can be manufactured to have a thick thickness of 70 ?m or more such that the electromagnetic shielding capability can be significantly improved. In addition, the multilayer graphite sheet is manufactured by graphitizing a hybrid laminate in which heterogeneous materials are mixed such that thermal conductivity and electromagnetic shielding capability can be simultaneously realized at a lower cost, thereby being useful as a thick film sheet which used in various applications such as home appliances and electric vehicles.Type: GrantFiled: May 3, 2019Date of Patent: September 5, 2023Assignee: SKC CO., LTD.Inventors: Jung Doo Seo, Hoon Kim, Jung-Gyu Kim, Jonggab Baek
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Publication number: 20230203710Abstract: Disclosed are a silicon carbide powder and a method of manufacturing a silicon carbide ingot using the same. More particularly, the silicon carbide powder includes carbon and silicon and has a particle circularity of 0.4 to 0.9 measured through 2D image analysis.Type: ApplicationFiled: December 22, 2022Publication date: June 29, 2023Inventors: Jong Hwi PARK, Kap Ryeol KU, Jung Gyu KIM, Jung Woo CHOI, Jung Doo SEO, Myung Ok KYUN
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Publication number: 20230203707Abstract: Disclosed are a silicon carbide powder, a method of manufacturing a silicon carbide powder, and a silicon carbide wafer. More particularly, the silicon carbide powder includes carbon and silicon and in the silicon carbide powder, O1s/C1s of a surface measured by X-ray photoelectron spectroscopy is 0.28 or less.Type: ApplicationFiled: December 22, 2022Publication date: June 29, 2023Inventors: Jong Hwi PARK, Kap Ryeol KU, Jung Gyu KIM, Jung Woo CHOI, Jung Doo SEO, Myung Ok KYUN
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Publication number: 20230140873Abstract: Disclosed are a silicon carbide wafer and a method of manufacturing the same. The silicon carbide wafer includes an upper surface and a lower surface, the upper surface includes a first target region, the first target region being within 85% of a radius of the upper surface based on a center of the upper surface, a first peak omega angle measured at intervals of 15 mm in a first direction in the first target region is within ?1° to +1° based on a peak omega angle measured at the center of the upper surface, and the first direction is a [1-100] direction and a direction passing through the center of the upper surface.Type: ApplicationFiled: November 4, 2022Publication date: May 11, 2023Inventors: Myung Ok KYUN, Kap Ryeol Ku, Jung Gyu Kim, Jung Woo Choi, Jung Doo Seo, Jong Hwi Park
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Patent number: 11541634Abstract: A graphite sheet having a ratio of thermal diffusivity in horizontal and vertical directions of 300 or more is disclosed. Also, a graphite sheet having a ratio of thermal diffusivity in a vertical direction of 2.0 mm2/s or less is disclosed. The graphite sheet has excellent thermal conductivity in horizontal and vertical directions and excellent flexibility at the same time and can be produced at low manufacturing cost, thereby holding an economic advantage.Type: GrantFiled: March 24, 2020Date of Patent: January 3, 2023Assignee: SKC CO., LTD.Inventors: Ki Ryun Park, Myung-Ok Kyun, Jung-Gyu Kim, Jung Doo Seo, Jonggab Baek, Jong Hwi Park, Jun Rok Oh
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Publication number: 20220403551Abstract: A silicon carbide wafer has one surface and the other surface opposite to the one surface. An average Rmax roughness of the one surface is 2.0 nm or less, and an average Ra roughness of the one surface is 0.1 nm or less. An edge region is a region in which a distance from an edge of the silicon carbide wafer toward a center is 5% to 75% of a radius of the silicon carbide wafer, and a central region is a region having a radius of 25% of the radius of the silicon carbide wafer at the center of the silicon carbide wafer. A difference between an average Rmax roughness of the edge region of the one surface and an average Rmax roughness of the central region of the one surface is 0.01 nm to 0.5 nm.Type: ApplicationFiled: June 9, 2022Publication date: December 22, 2022Applicant: SENIC Inc.Inventors: Jung Woo CHOI, Myung Ok KYUN, Jong Hwi PARK, Jung Doo SEO, Jung-Gyu KIM, Kap-Ryeol KU
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Publication number: 20220320296Abstract: In a silicon carbide wafer in an embodiment, in the photoluminescence signal intensity spectrum obtained after irradiating a laser on one surface of the silicon carbide wafer, the number of peak signals having an intensity more than 1.2 times the average signal intensity of the spectrum is 1/cm2 or less.Type: ApplicationFiled: March 11, 2022Publication date: October 6, 2022Applicant: SENIC Inc.Inventors: Jung Woo CHOI, Jong Hwi PARK, Jung-Gyu KIM, Jung Doo SEO, Kap-Ryeol KU
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Publication number: 20220220632Abstract: A silicon carbide ingot manufacturing method and a silicon carbide ingot manufacturing system are provided. The silicon carbide ingot manufacturing method and the silicon carbide ingot manufacturing system may change a temperature gradient depending on the growth of an ingot by implementing a guide which has a tilted angle to an external direction from the interior of a reactor, in an operation to grow an ingot during a silicon carbide ingot manufacturing process.Type: ApplicationFiled: March 28, 2022Publication date: July 14, 2022Applicant: SENIC INC.Inventors: Jong Hwi PARK, Kap-Ryeol KU, Jung-Gyu KIM, Jung Woo CHOI, Jung Doo SEO
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Publication number: 20220219354Abstract: A silicon carbide wafer manufacturing method includes: a bending measuring step of measuring a first edge having the greatest degree of a bending at one surface of a silicon carbide ingot having one surface; a cutting start step of starting a cutting at a second edge having a distance of r×a along an edge of the one surface from the first edge in a direction parallel to or with a predetermined off angle with respect to the one surface through the wire saw, a cutting speed being decreased to a first cutting speed in the cutting start step; a cutting proceeding step in which the first cutting speed is substantially constant within a variation of about ±5% of the first cutting speed; and a finish step in which the cutting speed is increased from the first cutting speed and the cutting of the silicon carbide ingot is completed.Type: ApplicationFiled: January 14, 2022Publication date: July 14, 2022Applicant: SENIC Inc.Inventors: Jung-Gyu KIM, Kap-Ryeol KU, Jung Doo SEO, Jung Woo CHOI, Jong Hwi PARK
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Patent number: 11339497Abstract: A silicon carbide ingot manufacturing method and a silicon carbide ingot manufacturing system are provided. The silicon carbide ingot manufacturing method and the silicon carbide ingot manufacturing system may change a temperature gradient depending on the growth of an ingot by implementing a guide which has a tilted angle to an external direction from the interior of a reactor, in an operation to grow an ingot during a silicon carbide ingot manufacturing process.Type: GrantFiled: August 23, 2021Date of Patent: May 24, 2022Assignee: SENIC INC.Inventors: Jong Hwi Park, Kap-Ryeol Ku, Jung-Gyu Kim, Jung Woo Choi, Sang Ki Ko, Byung Kyu Jang, Eun Su Yang, Jung Doo Seo
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Publication number: 20220090295Abstract: The method of preparing a silicon carbide ingot includes: disposing a raw material and a silicon carbide seed crystal to be separated in a reactor having an internal space; adjusting a temperature, a pressure, and an atmosphere of the internal space for sublimating the raw material and growing the silicon carbide ingot on the silicon carbide seed crystal; and cooling the reactor and retrieving the silicon carbide ingot, wherein the adjusting proceeds in a first inert gas atmosphere having a flow quantity of 100 sccm to 300 sccm, the cooling proceeds in a second inert gas atmosphere having a flow quantity of 1 sccm to 250 sccm, and the reactor has a thermal conductivity of 120 W/mK or less.Type: ApplicationFiled: September 17, 2021Publication date: March 24, 2022Applicant: SENIC INC.Inventors: Jong Hwi PARK, Kap-Ryeol KU, Jung Woo CHOI, Byung Kyu JANG, Myung-Ok KYUN, Jung-Gyu KIM, Jung Doo SEO
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Publication number: 20220064817Abstract: A silicon carbide ingot manufacturing method and a silicon carbide ingot manufacturing system are provided. The silicon carbide ingot manufacturing method and the silicon carbide ingot manufacturing system may change a temperature gradient depending on the growth of an ingot by implementing a guide which has a tilted angle to an external direction from the interior of a reactor, in an operation to grow an ingot during a silicon carbide ingot manufacturing process.Type: ApplicationFiled: August 23, 2021Publication date: March 3, 2022Applicant: SENIC INC.Inventors: Jong Hwi PARK, Kap-Ryeol KU, Jung-Gyu KIM, Jung Woo CHOI, Sang Ki KO, Byung Kyu JANG, Eun Su YANG, Jung Doo SEO
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Patent number: 11155466Abstract: The embodiment relates to a method for preparing a graphite sheet having a high thermal conductivity at a low cost without using an expensive polyimide film.Type: GrantFiled: October 20, 2017Date of Patent: October 26, 2021Assignee: SKC CO., LTD.Inventors: Jung Doo Seo, Jung-Gyu Kim, Jonggab Baek
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Patent number: 11040516Abstract: The present invention provides a graphite sheet having a ratio of thermal diffusivity in horizontal and vertical directions of 300 or more. Also, the present invention provides a graphite sheet having a ratio of thermal diffusivity in a vertical direction of 2.0 mm2/s or less. The graphite sheet has excellent thermal conductivity in horizontal and vertical directions and excellent flexibility at the same time and can be produced at low manufacturing cost, thereby holding an economic advantage.Type: GrantFiled: March 22, 2016Date of Patent: June 22, 2021Assignee: SKC CO., LTD.Inventors: Ki Ryun Park, Myung-Ok Kyun, Jung-Gyu Kim, Jung Doo Seo, Jonggab Baek, Jong Hwi Park, Jun Rok Oh
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Publication number: 20210086474Abstract: An embodiment relates to a multilayer graphite sheet with excellent electromagnetic shielding capability and thermal conductivity, and a manufacturing method therefor, wherein the multilayer graphite sheet has a multilayer structure of five or more layers in total and can be manufactured to have a thick thickness of 70 ?m or more such that the electromagnetic shielding capability can be significantly improved. In addition, the multilayer graphite sheet is manufactured by graphitizing a hybrid laminate in which heterogeneous materials are mixed such that thermal conductivity and electromagnetic shielding capability can be simultaneously realized at a lower cost, thereby being useful as a thick film sheet which used in various applications such as home appliances and electric vehicles.Type: ApplicationFiled: May 3, 2019Publication date: March 25, 2021Inventors: Jung Doo SEO, Hoon KIM, Jung-Gyu KIM, Jonggab BAEK
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Publication number: 20200223700Abstract: A graphite sheet having a ratio of thermal diffusivity in horizontal and vertical directions of 300 or more is disclosed. Also, a graphite sheet having a ratio of thermal diffusivity in a vertical direction of 2.0 mm2/s or less is disclosed. The graphite sheet has excellent thermal conductivity in horizontal and vertical directions and excellent flexibility at the same time and can be produced at low manufacturing cost, thereby holding an economic advantage.Type: ApplicationFiled: March 24, 2020Publication date: July 16, 2020Applicant: SKC CO., LTD.Inventors: Ki Ryun PARK, Myung-Ok Kyun, Jung-Gyu Kim, Jung Doo Seo, Jonggab Baek, Jong Hwi Park, Jun Rok Oh
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Publication number: 20190270645Abstract: The embodiment relates to a method for preparing a graphite sheet having a high thermal conductivity at a low cost without using an expensive polyimide film.Type: ApplicationFiled: October 20, 2017Publication date: September 5, 2019Applicant: SKC CO., LTD.Inventors: Jung Doo SEO, Jung-Gyu KIM, Jonggab BAEK
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Publication number: 20180265362Abstract: The present invention provides a graphite sheet having a ratio of thermal diffusivity in horizontal and vertical directions of 300 or more. Also, the present invention provides a graphite sheet having a ratio of thermal diffusivity in a vertical direction of 2.0 mm2/s or less. The graphite sheet has excellent thermal conductivity in horizontal and vertical directions and excellent flexibility at the same time and can be produced at low manufacturing cost, thereby holding an economic advantage.Type: ApplicationFiled: March 22, 2016Publication date: September 20, 2018Applicant: SKC CO., LTD.Inventors: Ki Ryun PARK, Myung-Ok KYUN, Jung-Gyu KIM, Jung Doo SEO, Jonggab BAEK, Jong Hwi PARK, Jun Rok OH