Patents by Inventor Jung Ha Kim

Jung Ha Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7689244
    Abstract: A mobile communication terminal with dedicated keys for controlling an integrated functional component such as an audio player, in which the dedicated keys are situated at convenient positions for use. The mobile communication terminal includes a housing that accommodates parts which enable wireless communications with an external device and has an audio player therein. The terminal includes a control key assembly positioned on at least one lateral side of the housing to enable a user to operate the audio player. The position of the control key assembly assists the user in pressing the keys using his thumb, forefinger, middle finger and third finger. The position of the control key assembly also enables a wide auxiliary display to be positioned on the upper surface of the housing, e.g., on the outer surface of the upper housing.
    Type: Grant
    Filed: October 4, 2005
    Date of Patent: March 30, 2010
    Assignee: LG Electronics Inc.
    Inventor: Jung Ha Kim
  • Publication number: 20080165067
    Abstract: A mobile terminal includes: a terminal casing including a first casing and a second casing combined with the first casing; an external antenna mounted on an external surface of the terminal casing; an internal antenna mounted within the terminal casing; and at least one fastening screw that fastens the first and second casings and electrically connects the external and internal antennas. The size and thickness of the terminal can be reduced.
    Type: Application
    Filed: January 8, 2008
    Publication date: July 10, 2008
    Inventor: Jung-Ha Kim
  • Patent number: 6661489
    Abstract: A domain-divided twisted nematic crystal cell and method of fabricating thereof. The method of the present invention comprises the steps of providing first and second substrates, forming a photo-alignment layer in each domain of the first substrate having two or more domains, wherein thicknesses of the photo-alignment layers corresponding to the domains are different from each other. A pretilt angle in each domain is formed by light irradiation on the photo-alignment layer, wherein the pretilt angles corresponding to the domains are different from each other due to the different thicknesses of the photo-alignment layer in different domains. The first and second substrates are positioned to face each other, and liquid crystal is injected between the first and second substrates.
    Type: Grant
    Filed: May 27, 1998
    Date of Patent: December 9, 2003
    Assignee: LG Electronics Inc.
    Inventors: Jung Ha Kim, Jong Hyun Kim
  • Patent number: 6593989
    Abstract: A domain-divided twisted nematic crystal cell and method of fabricating thereof. The method of the present invention comprises the steps of providing first and second substrates, forming a photo-alignment layer in each domain of the first substrate having two or more domains, wherein thicknesses of the photo-alignment layers corresponding to the domains are different from each other. A pretilt angle in each domain is formed by light irradiation on the photo-alignment layer, wherein the pretilt angles corresponding to the domains are different from each other due to the different thicknesses of the photo-alignment layer in different domains. The first and second substrates are positioned to face each other, and liquid crystal is injected between the first and second substrates.
    Type: Grant
    Filed: July 18, 2001
    Date of Patent: July 15, 2003
    Assignee: L.G. Electronics Inc.
    Inventors: Jung Ha Kim, Jong Hyun Kim
  • Patent number: 6294482
    Abstract: A method of forming an insulating layer pattern in a liquid crystal display which enables the formation of an insulating layer pattern on a substrate under a low temperature without the need of expensive equipment and complicated processes, wherein the formation speed of the insulating layer is accelerated. The method includes the steps of forming an organic thin layer containing silicon on an insulated substrate, exposing the thin layer to a gaseous ambience including, oxygen, generating a plurality of oxygen radicals and silicon radicals by applying ultraviolet rays to the thin layer using a mask having a predetermined pattern, forming an insulating layer by reacting the silicon radicals with the oxygen radicals, and defining an insulating layer pattern by removing a portion of the thin layer free of the ultraviolet rays.
    Type: Grant
    Filed: November 4, 1999
    Date of Patent: September 25, 2001
    Assignee: LG LCD Inc.
    Inventor: Jung-Ha Kim
  • Patent number: 6222601
    Abstract: A method of manufacturing a liquid crystal cell in accordance with the present invention comprises the steps of forming a first alignment layer and a second alignment layer on a first substrate and a second substrate, forming a pretilt having an alignment, pretilt angle direction, and pretilt angle of the first alignment layer, forming a liquid crystal layer between the first substrate and second substrate after sealing them.
    Type: Grant
    Filed: October 30, 1997
    Date of Patent: April 24, 2001
    Assignee: LG Electronics, Inc.
    Inventors: Yoo Jin Choi, Jung Ha Kim
  • Patent number: 6060130
    Abstract: A method for forming a silicon oxide film, SiO.sub.x, where X=1 or 2, on an electrode of a thin film transistor, e.g., for a liquid crystal display device. The method includes the steps of: forming an electrode on a substrate; forming an organic silicon-containing thin film on exposed surfaces of the electrode and the substrate; providing a gaseous atmosphere of oxygen or air about the electrode and the substrate; and irradiating the thin film with ultra violet light to produce radicals, including silicon radicals, from the thin film. The irradiation also produces oxygen radicals from the atmosphere. The silicon and oxygen radicals react to form the silicon oxide.
    Type: Grant
    Filed: August 12, 1998
    Date of Patent: May 9, 2000
    Assignee: LG Electronics Inc.
    Inventor: Jung-Ha Kim