Abstract: A mobile terminal that controls the output of an audio based on contact or approach of an external object and a method of controlling the mobile terminal, are discussed. According to an embodiment, the mobile terminal includes an audio output module configured to output an audio; a sensing unit arranged to sense an object approaching the audio output module; and a controller configured to stop the outputting of the audio, when the sensing unit senses the object approaching the audio output module while the audio is being output through the audio output module.

Abstract: A plasma display panel and a method for manufacturing the same ate provided. The plasma display panel includes a first substrate, a second substrate, and a drive device. The first substrate includes at least one address electrode, a dielectric layer, phosphors, and at least one barrier rib. The second substrate may be bonded to the first substrate with the at least one barrier ribs between the first and second substrates. The second substrate includes at least one pair of sustain electrodes, a dielectric layer, and a protective layer including a single crystal magnesium oxide nano powder. The drive device provides at least one of a ramp-up or a ramp-down waveform, wherein at least one of (1) the ramp-up waveform has a different peak voltage based on the temperature of the plasma display panel or (2) the ramp-down waveform has a different lowest voltage based on the temperature of the plasma display panel.

Abstract: In the method of fabricating a TFT in accordance with the present invention, a first semiconductor layer 37 to be used as a channel is formed on a portion of an insulating layer 35 in correspondence with an underlying gate electrode 33. A second semiconductor layer 34, ohmic contact layer 41 and metal layer 45 are then successively formed on the insulating layer 35 and first semiconductor layer 37. A photoresist pattern is next formed on a portion of the ohmic contact layer other than a portion corresponding to the gate electrode. The metal layer is patterned using the photoresist pattern to form source 43 and drain 45 electrodes, and the ohmic contact layer 41 and second semiconductor layer 39 are removed using the photoresist pattern as a mask, or using the source and drain electrodes as a mask, to expose portions of the insulating layer and first semiconductor layer. A passivation layer 47 is formed to cover the insulating layer, first semiconductor layer, and source and drain electrodes.

Abstract: A semiconductor device for a TFT includes a first semiconductor layer to be used as a channel, which is formed on a portion of an insulating layer in correspondence with an underlying gate electrode. The semiconductor device further includes a second semiconductor layer, an ohmic contact layer, and a metal layer formed on the insulating layer and the first semiconductor layer and patterned to expose portions of the insulating layer and the first semiconductor layer. The patterned metal layer forms source and drain electrodes. The semiconductor device also includes a passivation layer, which covers the insulating layer, the first semiconductor layer and the source and drain electrodes, and a pixel electrode, which contacts the drain electrode though a contact hole in the passivation layer.

Abstract: A method of manufacturing an active matrix LCD is disclosed whereby gate bus lines, gate electrodes and source bus line segments are patterned from the same vacuum deposited first metal layer. An insulating layer, semiconductor layer, extrinsic semiconductor layer and second metal layer are then successively deposited on the substrate. A TFT channel region is formed by etching each of these layers in a second patterning process. During this step, storage capacitors may be formed by patterning the second metal layer so that it overlaps part of the gate bus lines. A transparent conductive layer is next deposited on the substrate. Pixel electrodes are then formed by patterning the transparent conductive layer in a third patterning process. Further, using a portion of the transparent conductive layer as a mask, the second metal layer and part of the extrinsic semiconductor layer are etched to form source and drain electrodes.