Abstract: A method includes applying a voltage to a wafer or a device under test (DUT). The wafer or the DUT is illuminated with an electron beam after applying the voltage to the wafer or the DUT. Cathodoluminescent light emitted from the wafer or the DUT in response to the electron beam is detected. One or more characteristics of the wafer or the DUT are determined based on the detected cathodoluminescent light.

Abstract: A method includes applying a voltage to a wafer or a device under test (DUT). The wafer or the DUT is illuminated with an electron beam after applying the voltage to the wafer or the DUT. Cathodoluminescent light emitted from the wafer or the DUT in response to the electron beam is detected. One or more characteristics of the wafer or the DUT are determined based on the detected cathodoluminescent light.

Abstract: A wafer and DUT inspection apparatus and a wafer and DUT inspection method using thereof are provided. The apparatus includes a vacuum chamber, a stage, an electron gun, a lens system, an optical mirror and a detector. In the vacuum chamber, the stage is disposed near a first end, and the electron gun is disposed near a second end opposite to the first end. The lens system disposed between the stage and the electron gun is a total reflective achromatic lens system including a first lens and a second lens. The second lens having a second aperture is disposed between the electron gun and the first lens having a first aperture aligned with the second aperture. The optical mirror is disposed between the lens system and the electron gun. The detector is horizontally aligned with the optical mirror and configured to detect cathodoluminescence reflected from the optical mirror.

Abstract: A wafer and DUT inspection apparatus and a wafer and DUT inspection method using thereof are provided. The apparatus includes a vacuum chamber, a stage, an electron gun, a lens system, an optical mirror and a detector. In the vacuum chamber, the stage is disposed near a first end, and the electron gun is disposed near a second end opposite to the first end. The lens system disposed between the stage and the electron gun is a total reflective achromatic lens system including a first lens and a second lens. The second lens having a second aperture is disposed between the electron gun and the first lens having a first aperture aligned with the second aperture. The optical mirror is disposed between the lens system and the electron gun. The detector is horizontally aligned with the optical mirror and configured to detect cathodoluminescence reflected from the optical mirror.

Abstract: A method for measuring current leakage of a contact of a semiconductor device formed on or in a substrate, includes scanning the contact with a probe of a conductive atomic force microscope; applying a DC voltage between the substrate and a conductive tip of the probe; and measuring a value of a current passing through the contact to the substrate, in response to the applied DC voltage.

Abstract: A method for measuring current leakage of a contact of a semiconductor device formed on or in a substrate, includes scanning the contact with a probe of a conductive atomic force microscope; applying a DC voltage between the substrate and a conductive tip of the probe; and measuring a value of a current passing through the contact to the substrate, in response to the applied DC voltage.