Abstract: An oligomer probe array having improved reaction yield is provided. The oligomer probe array includes a substrate, an immobilization layer on the substrate, a plurality of nano particles coupled with a surface of the immobilization layer, and a plurality of oligomer probes coupled with surfaces of the nano particles.

Abstract: An oligomer probe array with improved signal-to-noise ratio includes a substrate, a plurality of probe cell active regions formed on or in the substrate, with each of the plurality of probe cell active regions having a substantially planar surface and being coupled with at least one oligomer probe with own sequence, and a probe cell isolation region defining the probe cell active regions and having no functional groups for coupling with the oligomer probes on a surface.

Abstract: An oligomer probe array with improved signal-to-noise ratio and desired detection sensitivity even when a reduced design rule is employed includes a substrate, a plurality of probe cell active regions formed on or in the substrate, each of the plurality of probe cell active regions having a three-dimensional surface and being coupled with at least one oligomer probe with its own sequence, and a probe cell isolation region defining the probe cell active regions and having no functional groups for coupling with the oligomer probes on a surface.

Abstract: Provided are a mask pattern including a silicon-containing self-assembled molecular layer, a method of forming the same, and a method of fabricating a semiconductor device. The mask pattern includes a resist pattern formed on a semiconductor substrate and the self-assembled molecular layer formed on the resist pattern. The self-assembled molecular layer has a silica network formed by a sol-gel reaction. To form the mask pattern, first, the resist pattern is formed with openings on an underlayer covering the substrate to expose the underlayer to a first width. Then, the self-assembled molecular layer is selectively formed only on a surface of the resist pattern to expose the underlayer to a second width smaller than the first width. The underlayer is etched by using the resist pattern and the self-assembled molecular layer as an etching mask to obtain a fine pattern.

Abstract: A photolabile compound, an oligomer probe array, and a substrate for oligomer probe array comprising the same, and a manufacturing method of the same are disclosed.

Abstract: Example embodiments relate to a biosensor using a nanoscale material as a channel of a transistor and a method of fabricating the same. A biosensor according to example embodiments may include a plurality of insulating films. A first signal line and a second signal line may be interposed between the plurality of insulating films. A semiconductor nanostructure may be disposed on the plurality of insulating films, the semiconductor nanostructure having a first side electrically connected to the first signal line and a second side electrically connected to the second signal line. A plurality of probes may be coupled to the semiconductor nanostructure. A biosensor according to example embodiments may have a reduced analysis time.

Abstract: A microarray, a substrate for a microarray and more productive methods of fabricating the microarray and the substrate are provided. The microarray includes a substrate divided into a first region and a second region; a plurality of linkers represented by formula 1 or 2: wherein X is a site coupled to the substrate, R is a hydroxyl, aldehyde, carboxyl, amino, amide, thiol, halo, epoxy, or sulfonate group, m is an integer in the range of 3 to 16, p is an integer in the range of 1 to 30, and q is an integer in the range of 1 to 15, directly coupled to the substrate in the first region but not coupled to the substrate in the second region; and a plurality of probes coupled to the respective linkers.

Abstract: Mask patterns include a resist pattern and a gel layer on a surface of the resist pattern having a junction including hydrogen bonds between a proton donor polymer and a proton acceptor polymer. Methods of forming the mask patterns and methods of fabricating a semiconductor device using the mask patterns as etching masks are also provided.

Abstract: Process for producing a photoresist pattern containing the steps: (A) applying a first photoresist composition containing a resin having a structural unit containing an acid-labile group in its side chain, an acid generator and a cross-linking agent on a substrate to form a first photoresist film, exposing the film to radiation followed by developing the film, to form a first photoresist pattern; (B) making the first photoresist pattern inactive to radiation, insoluble in an alkaline developer or insoluble in a second photoresist composition in step (C); (C) applying a second photoresist composition containing a resin having a structural unit containing an acid-labile group in its side chain and at least one acid generator of formula (I) or (II) defined in the specification, on the first photoresist pattern, to form a second photoresist film, exposing the film to radiation; and (D) developing the exposed film, to form a second photoresist pattern.

Abstract: The present invention provides a photoresist composition comprising a resin comprising a structural unit derived from a compound represented by the formula (I): wherein R1 represents a C1-C6 fluorine-containing alkyl group, R2 represents a hydrogen atom or a methyl group, and A represents a C1-C10 divalent saturated hydrocarbon group, and being insoluble or poorly soluble in an aqueous alkali solution but becoming soluble in an aqueous alkali solution by the action of an acid, and an acid generator represented by the formula (II): wherein Q1 and Q2 each independently represent a fluorine atom or a C1-C6 perfluoroalkyl group, X1 represents a single bond or a C1-C17 divalent saturated hydrocarbon group in which one or more —CH2— can be replaced by —O— or —CO—, Y1 represents a C1-C36 aliphatic hydrocarbon group which can have one or more substituents, etc., and Z+ represents an organic counter cation.

Abstract: A DNA chip includes a substrate, at least one first electrode and at least one second electrode on the substrate, the first electrode and the second electrode being opposite to and separated from each other, multiple oligonucleotide probes, one end of the oligonucleotide probes being immobilized on the first electrode, and a charge-carrier transport layer on the second electrode, the charge-carrier layer contacting an other end of the oligonucleotide probes.

Abstract: Provided are a mask pattern including a silicon-containing self-assembled molecular layer, a method of forming the same, and a method of fabricating a semiconductor device. The mask pattern includes a resist pattern formed on a semiconductor substrate and the self-assembled molecular layer formed on the resist pattern. The self-assembled molecular layer has a silica network formed by a sol-gel reaction. To form the mask pattern, first, the resist pattern is formed with openings on an underlayer covering the substrate to expose the underlayer to a first width. Then, the self-assembled molecular layer is selectively formed only on a surface of the resist pattern to expose the underlayer to a second width smaller than the first width. The underlayer is etched by using the resist pattern and the self-assembled molecular layer as an etching mask to obtain a fine pattern.

Abstract: Methods of forming an integrated circuit device may include forming a resist pattern on a layer of an integrated circuit device with portions of the layer being exposed through openings of the resist pattern. An organic-inorganic hybrid siloxane network film may be formed on the resist pattern. Portions of the layer exposed through the resist pattern and the organic-inorganic hybrid siloxane network film may then be removed. Related structures are also discussed.

Abstract: Provided are a mask pattern including a silicon-containing self-assembled molecular layer, a method of forming the same, and a method of fabricating a semiconductor device. The mask pattern includes a resist pattern formed on a semiconductor substrate and the self-assembled molecular layer formed on the resist pattern. The self-assembled molecular layer has a silica network formed by a sol-gel reaction. To form the mask pattern, first, the resist pattern is formed with openings on an underlayer covering the substrate to expose the underlayer to a first width. Then, the self-assembled molecular layer is selectively formed only on a surface of the resist pattern to expose the underlayer to a second width smaller than the first width. The underlayer is etched by using the resist pattern and the self-assembled molecular layer as an etching mask to obtain a fine pattern.

Abstract: A non-linear silicon compound is provided. The non-linear silicon compound may be a non-linear aromatic compound used as a linker for manufacturing an oligomer probe array. The non-linear silicon compound may reduce self-aggregation so as to form a stable and uniform monolayer. As a result, upon hybridization analysis, the fluorescent intensity may be increased.

Abstract: A method of manufacturing a microarray includes providing a substrate having a surface that is immobilized with a functional group protected with an acid-labile protecting group and capable of coupling with an oligomer probe, providing a photoacid generator onto the substrate, disposing on the substrate an imprint template comprising a convex region and a plurality of concave regions surrounding the convex region so that the convex region contacts with or is adjacent to an upper surface of the substrate to define a plurality of reaction zones by the upper surface of the substrate and the convex region and the concave regions of the imprint template, exposing one or more of the reaction zones to light so that an acid is generated by the photoacid generator in the one or more exposed reaction zones and a functional group in the one or more exposed reaction zones is deprotected by the acid, and providing an oligomer probe onto the substrate so that the oligomer probe couples with the deprotected functional group

Abstract: Mask patterns include a resist pattern and a gel layer on a surface of the resist pattern having a junction including hydrogen bonds between a proton donor polymer and a proton acceptor polymer. Methods of forming the mask patterns and methods of fabricating a semiconductor device using the mask patterns as etching masks are also provided.

Abstract: A mask pattern for semiconductor device fabrication comprises a resist pattern formed on a semiconductor substrate, and an interpolymer complex film formed on the resist pattern, wherein the interpolymer complex film includes a network formed by a hydrogen bond between a proton donor polymer and a proton acceptor polymer.

Abstract: Provided is a substrate for an oligomer probe array to which a photolabile material having an acetylene derivative is directly attached or attached via a linker.

Abstract: A microarray, a substrate for a microarray and more productive methods of fabricating the microarray and the substrate are provided. The microarray includes a substrate divided into a first region and a second region; a plurality of linkers represented by formula 1 or 2: wherein X is a site coupled to the substrate, R is a hydroxyl, aldehyde, carboxyl, amino, amide, thiol, halo, epoxy, or sulfonate group, m is an integer in the range of 3 to 16, p is an integer in the range of 1 to 30, and q is an integer in the range of 1 to 15, directly coupled to the substrate in the first region but not coupled to the substrate in the second region; and a plurality of probes coupled to the respective linkers.