Abstract: The present invention relates to a thin film transistor and a method of manufacturing the same. More particularly, the present invention relates to a thin film transistor that includes a zinc oxide material including Si as a channel material of a semiconductor layer, and a method of manufacturing the same.

Abstract: An exemplary embodiment of the present invention provides a method for preparing an organic light-emitting device, comprising the steps of: 1) forming a spacer pattern on a first electrode formed on a substrate; 2) forming an organic material layer and a second electrode; 3) exposing the first electrode by forming an encapsulation thin film and then etching at least one portion of the encapsulation thin film; and 4) forming an auxiliary electrode which is electrically connected to the first electrode exposed in the step 3). The organic light-emitting device according to the exemplary embodiment of the present invention may solve problems of a voltage drop due to resistance of a transparent electrode in a longitudinal direction and of resultant brightness non-uniformity of the diode.

Abstract: Provided are a conductive film and a method of manufacturing the same. The conductive film includes a substrate, a first conductive layer formed on the substrate, and a patterned second conductive layer formed on the first conductive layer. Here, oxide layers are formed on top and side surfaces of the second conductive layer. The conductive film may prevent defects of the conductive layer caused by rapid oxidation or damage to the substrate, and increase emission uniformity.

Abstract: An organic light emitting device includes a cathode made of metal, at least one organic material layer including a light emitting layer, and an anode in the sequentially layered form. The organic light emitting device also includes a thin metal film that is interposed between the cathode and the organic material layer.

Abstract: The present invention relates to an organic light emitting device and a method for preparing the same. An organic light emitting device according to the present invention comprises an organic light emitting unit having a structure in which a substrate, a first electrode, an organic material layer, and a second electrode are sequentially laminated, wherein the organic light emitting device comprises an auxiliary electrode and a fuse pattern; and the first electrode and the auxiliary electrode are electrically connected to each other through the fuse pattern.

Abstract: The present invention provides an organic light emitting device comprising: a substrate; a first conductive layer and a second conductive layer, which are sequentially positioned on the substrate; and at least one organic material layer, including a light emitting layer, which is interposed between the first conductive layer and the second conductive layer; wherein the organic light emitting device comprises a pattern layer formed corresponding to the light emitting region between at least one organic material layer and at least one conductive layer of the first conductive layer and the second conductive layer; charges are injected or transported between the conductive layer and the organic material layer through the pattern layer; and charges are not directly injected or transported in the region in which two layers each in contact with the upper surface and the lower surface of the pattern layer are directly in contact, and a method for preparation thereof.

Abstract: An exemplary embodiment of the present invention provides an organic light emitting diode, comprising a substrate, a first electrode, an organic material layer, and a second electrode, wherein a trench comprising a concave part and a convex part is provided on the substrate, the first electrode is provided on the substrate on which the trench is formed by being deposited, and an auxiliary electrode is provided on the first electrode. The organic light emitting diode according to the exemplary embodiment of the present invention may increase surface areas of the first electrode and the auxiliary electrode formed on the substrate, thereby implementing a low resistance electrode. In addition, since a line width of the electrode is not increased, it is possible to prevent a decrease of an opening ratio of the organic light emitting diode.

Abstract: Disclosed is a method of fabricating an organic light emitting device and an organic light emitting device fabricated using the same. The method comprises the steps of sequentially forming a cathode made of metal, at least one organic material layer including a light emitting layer and an anode on a substrate, and additionally comprises the step of forming a thin metal film on a native oxide layer that is spontaneously formed on the cathode before forming of the organic material layer.

Abstract: The present invention relates to a method for producing an organic light emitting device, comprising a step of sequentially forming on a substrate a first electrode formed of a metal, one or more organic material layers including a light emitting layer, and a second electrode, which comprises a step of forming a layer on the first electrode using a metal having the higher oxidation rate than the first electrode before forming the organic material layer, and to an organic light emitting device produced by the same.

Abstract: Provided are a substrate for an organic electronic device, and the like. The substrate for an organic electronic device having a functional layer which may improve a function such as light extraction efficiency of an organic electronic system such as organic light emitting device and stability of the device due to excellent cohesive strength to the substrate may be provided. An organic electronic system including the substrate and a use thereof may also be provided.

Abstract: The present invention relates to an organic light emitting device and a method for preparing the same, and the organic light emitting device according to the present invention comprises: a substrate; a first electrode provided on the substrate; an organic material layer provided on the first electrode; a second electrode pattern provided on the organic material layer and comprising two or more metal layers spaced apart from each other; and a fuse layer provided in an entire region of an upper surface of the second electrode pattern and gaps between the metal layers spaced apart from each other.

Abstract: The present invention relates to an organic light emitting device and a method for preparing an organic light emitting device, and the organic light emitting device comprises a substrate, a first electrode, an organic material layer, and a second electrode in this order, and a spacer pattern on the first electrode.

Abstract: The present invention provides a stacked organic light emitting device, comprising a first conductive layer, at least one intermediate conductive layer and a second conductive layer, and light emitting units disposed between the conductive layers, wherein at least two non-neighboring conductive layers among the conductive layers are conductive layers belonging to Group 1 such that they are electrically connected with each other to a common potential; at least one non-neighboring conductive layer among the conductive layers which are not electrically connected with the conductive layers belonging to Group 1 to a common potential are conductive layers belonging to Group 2 such that they are electrically connected with each other to a common potential; and the conductive layers belonging to Group 1 and the conductive layers belonging to Group 2 are connected with each other via a voltage regulator for alternately applying a positive voltage and a negative voltage.

Abstract: The present invention relates to an organic light emitting device and a method for preparing the same. An organic light emitting device according to the present invention comprises an organic light emitting unit having a structure in which a substrate, a first electrode, an organic material layer, and a second electrode are sequentially laminated, wherein the organic light emitting device comprises an auxiliary electrode and a fuse pattern; and the first electrode and the auxiliary electrode are electrically connected to each other through the fuse pattern.

Abstract: The present invention relates to a thin film transistor and a method of manufacturing the same. More particularly, the present invention relates to a thin film transistor that includes a zinc oxide (ZnO series) electrode having one or more of Si, Mo, and W as a source electrode and a drain electrode, and a method of manufacturing the same.

Abstract: An exemplary embodiment of the present invention provides a method for preparing an organic light-emitting device, comprising the steps of: 1) forming a spacer pattern on a first electrode formed on a substrate; 2) forming an organic material layer and a second electrode; 3) exposing the first electrode by forming an encapsulation thin film and then etching at least one portion of the encapsulation thin film; and 4) forming an auxiliary electrode which is electrically connected to the first electrode exposed in the step 3). The organic light-emitting device according to the exemplary embodiment of the present invention may solve problems of a voltage drop due to resistance of a transparent electrode in a longitudinal direction and of resultant brightness non-uniformity of the diode.

Abstract: The present invention provides a fabrication method for an organic electronic device comprising a step of stacking sequentially a first electrode made of a metal, one or more organic material layers, and a second electrode on a substrate, wherein the method comprises the steps of: 1) forming a layer on the first electrode using a metal having a higher oxidation rate than the first electrode before forming the organic material layer, 2) treating the layer formed using a metal having a higher oxidation rate than the first electrode with oxygen plasma to form a metal oxide layer, and 3) treating the metal oxide layer with inert gas plasma to remove a native oxide layer on the first electrode, and an organic electronic device fabricated by the same method.

Abstract: The present invention relates to a thin film transistor and a method of manufacturing the same. More particularly, the present invention relates to a thin film transistor that includes a zinc oxide material including Si as a channel material of a semiconductor layer, and a method of manufacturing the same.

Abstract: The present invention provides a fabrication method for an organic electronic device comprising a step of stacking sequentially a first electrode made of a metal, one or more organic material layers, and a second electrode on a substrate, wherein the method comprises the steps of: 1) forming a layer on the first electrode using a metal having a higher oxidation rate than the first electrode before forming the organic material layer, 2) treating the layer formed using a metal having a higher oxidation rate than the first electrode with oxygen plasma to form a metal oxide layer, and 3) treating the metal oxide layer with inert gas plasma to remove a native oxide layer on the first electrode, and an organic electronic device fabricated by the same method.

Abstract: The present invention relates to a thin film transistor and a method of manufacturing the same. More particularly, the present invention relates to a thin film transistor that includes a zinc oxide material including Si as a channel material of a semiconductor layer, and a method of manufacturing the same.