Abstract: Disclosed are semiconductor packages and their fabrication methods. The semiconductor package comprises providing a semiconductor substrate, forming a semiconductor element on an active surface of the semiconductor substrate, forming in the semiconductor substrate through vias that extend from the active surface into the semiconductor substrate, forming a first pad layer on the active surface of the semiconductor substrate, performing a first planarization process on the first pad layer, performing on an inactive surface of the semiconductor substrate a thinning process to expose the through vias, forming a second pad layer on the inactive surface of the semiconductor substrate, performing a second planarization process on the second pad layer, and after the second planarization process, performing a third planarization process on the first pad layer.

Abstract: Provided are a method of inspecting a surface and a method of manufacturing a semiconductor device. The methods include preparing a substrate, selecting a spatial resolution of a first optical device by setting a magnification of an imaging optical system, emitting multi-wavelength light toward a first measurement area of the substrate and obtaining first wavelength-specific images, generating first spectrum data based on the first wavelength-specific images, generating first spectrum data of respective pixels based on the first wavelength-specific images, and extracting a spectrum of at least one first inspection area having a range of the first measurement area or less from the first spectrum data, and analyzing the spectrum. The first optical device includes a light source, an objective lens, a detector, and an imaging optical system. The obtaining first wavelength-specific images includes using the imaging optical system and the detector.

Abstract: Provided are a method of inspecting a surface and a method of manufacturing a semiconductor device. The methods include preparing a substrate, selecting a spatial resolution of a first optical device by setting a magnification of an imaging optical system, emitting multi-wavelength light toward a first measurement area of the substrate and obtaining first wavelength-specific images, generating first spectrum data based on the first wavelength-specific images, generating first spectrum data of respective pixels based on the first wavelength-specific images, and extracting a spectrum of at least one first inspection area having a range of the first measurement area or less from the first spectrum data, and analyzing the spectrum. The first optical device includes a light source, an objective lens, a detector, and an imaging optical system. The obtaining first wavelength-specific images includes using the imaging optical system and the detector.

Abstract: In a defect inspection method, first and second inspection conditions having a first sensitivity of detection signal and having a second sensitivity of a detection signal for a defect of interest (DOI), respectively, are determined. The first and second sensitivities are different. First and second images of the same detection region on a substrate surface under the first and second inspection conditions respectively, are obtained. The first and second images are matched to detect a defect in the detection region.

Abstract: A scanning probe inspector comprises: a probe that includes a cantilever and a tip whose length corresponds to a depth of a trench that is formed in a wafer; a trench detector that acquires location information of the trench using the probe, where the location information includes depth information of the trench; a controller that inserts the tip into a first point where there exists a trench based on the location information of the trench, and moves the tip through the trench using the location information of the trench; and a defect detector that detects a presence of a defect in a sidewall of the trench as the tip is moved through the trench.

Abstract: An optical measuring method includes generating a Bessel beam, filtering the Bessel beam to generate a focused Bessel beam, vertically irradiating the focused Bessel beam onto a substrate in which an opening is formed, and detecting light reflected from the substrate to obtain an image of a bottom surface of the opening.

Abstract: Provided are a method of inspecting a surface and a method of manufacturing a semiconductor device. The methods include preparing a substrate, selecting a spatial resolution of a first optical device by setting a magnification of an imaging optical system, emitting multi-wavelength light toward a first measurement area of the substrate and obtaining first wavelength-specific images, generating first spectrum data based on the first wavelength-specific images, generating first spectrum data of respective pixels based on the first wavelength-specific images, and extracting a spectrum of at least one first inspection area having a range of the first measurement area or less from the first spectrum data, and analyzing the spectrum. The first optical device includes a light source, an objective lens, a detector, and an imaging optical system. The obtaining first wavelength-specific images includes using the imaging optical system and the detector.

Abstract: A scanning probe inspector comprises: a probe that includes a cantilever and a tip whose length corresponds to a depth of a trench that is formed in a wafer; a trench detector that acquires location information of the trench using the probe, where the location information includes depth information of the trench; a controller that inserts the tip into a first point where there exists a trench based on the location information of the trench, and moves the tip through the trench using the location information of the trench; and a defect detector that detects a presence of a defect in a sidewall of the trench as the tip is moved through the trench.

Abstract: A method of testing can include providing a first beam having a first focal length and a second beam having a second focal length that is less than the first focal length to a stage region to provide a first reflected beam and a second reflected beam from the stage region. The first reflected beam can be detected among the first reflected beam and the second reflected beam reflected from the stage region. The second reflected beam can be detected among the first reflected beam and the second reflected beam reflected from the stage region. A first image can be generated from the first reflected beam and a second image can be generated from the second reflected beam. The first image and the second image can be combined to provide a 3D image.

Abstract: Provided are a method of inspecting a surface and a method of manufacturing a semiconductor device. The methods include preparing a substrate, selecting a spatial resolution of a first optical device by setting a magnification of an imaging optical system, emitting multi-wavelength light toward a first measurement area of the substrate and obtaining first wavelength-specific images, generating first spectrum data based on the first wavelength-specific images, generating first spectrum data of respective pixels based on the first wavelength-specific images, and extracting a spectrum of at least one first inspection area having a range of the first measurement area or less from the first spectrum data, and analyzing the spectrum. The first optical device includes a light source, an objective lens, a detector, and an imaging optical system. The obtaining first wavelength-specific images includes using the imaging optical system and the detector.

Abstract: A method of testing can include providing a first beam having a first focal length and a second beam having a second focal length that is less than the first focal length to a stage region to provide a first reflected beam and a second reflected beam from the stage region. The first reflected beam can be detected among the first reflected beam and the second reflected beam reflected from the stage region. The second reflected beam can be detected among the first reflected beam and the second reflected beam reflected from the stage region. A first image can be generated from the first reflected beam and a second image can be generated from the second reflected beam. The first image and the second image can be combined to provide a 3D image.

Abstract: An optical measuring method includes generating a Bessel beam, filtering the Bessel beam to generate a focused Bessel beam, vertically irradiating the focused Bessel beam onto a substrate in which an opening is formed, and detecting light reflected from the substrate to obtain an image of a bottom surface of the opening.

Abstract: A semiconductor device inspecting apparatus includes a light source for emitting light to a semiconductor pattern. The semiconductor pattern includes a structure that reflects the light from the light source. The semiconductor device inspecting apparatus further includes an objective optical system disposed in a path of the reflected light from the semiconductor pattern, and a first noise filter disposed in a path of the reflected light having passed through the objective optical system, the first noise filter including at least one bar pattern that filters a diffraction noise of the light. The semiconductor device inspecting apparatus additionally includes a second noise filter disposed in a path of the filtered light from the first noise filter, the second noise filter including an outer frame surrounding a central portion. The semiconductor device inspecting apparatus further includes a first photodetector detecting the light having passed through the second noise filter.

Abstract: Provided are a method of inspecting a surface and a method of manufacturing a semiconductor device. The methods include preparing a substrate, selecting a spatial resolution of a first optical device by setting a magnification of an imaging optical system, emitting multi-wavelength light toward a first measurement area of the substrate and obtaining first wavelength-specific images, generating first spectrum data based on the first wavelength-specific images, generating first spectrum data of respective pixels based on the first wavelength-specific images, and extracting a spectrum of at least one first inspection area having a range of the first measurement area or less from the first spectrum data, and analyzing the spectrum. The first optical device includes a light source, an objective lens, a detector, and an imaging optical system. The obtaining first wavelength-specific images includes using the imaging optical system and the detector.

Abstract: In a defect inspection method, first and second inspection conditions having a first sensitivity of detection signal and having a second sensitivity of a detection signal for a defect of interest (DOI), respectively, are determined. The first and second sensitivities are different. First and second images of the same detection region on a substrate surface under the first and second inspection conditions respectively, are obtained. The first and second images are matched to detect a defect in the detection region.

Abstract: Provided is a wafer inspection apparatus using three-dimensional (3D) images, which apparatus may acquire a 3D image by adjusting a focal position at a high speed, and inspect a wafer by using the 3D image so that a 3D inspection operation may be precisely performed on patterns formed on the wafer at a high speed. The wafer inspection apparatus may include a stage on which a wafer is disposed, an optical apparatus configured to acquire an image of a pattern formed on the wafer by using a scan method, a focus adjusting unit configured to change a focal position of light irradiated to the wafer according to a scan speed of the optical apparatus, and an image processor configured to integrate images corresponding to focal positions and generate and analyze 3D images.

Abstract: A method of manufacturing a unit cell of a solid oxide fuel cell using a decalcomania process, in which an anode, electrolyte, cathode and interconnect are deposited on a substrate using the decalcomania process when the unit cell of the solid oxide fuel cell having a variety of shapes, such as a planar type, a horizontal pipe type, a tubular type, a segmented type, and the like, is manufactured.

Abstract: A method of manufacturing a unit cell of a solid oxide fuel cell using a transfer process, in which an anode, electrolyte, cathode and interconnect are deposited on a substrate using the transfer process when the unit cell of the solid oxide fuel cell having a variety of shapes, such as a planar type, a horizontal pipe type, a tubular type, a segmented type, and the like, is manufactured.

Abstract: A method of inspecting a substrate includes measuring a first current flowing between a first region and a second region of the substrate using a first probe. A second current flowing between the first region and the second region of the substrate may be measured using a second probe including a material different from that of the first probe. By comparing the first and second currents, it can be determined whether there is a change in a physical composition of the substrate and a change in a physical configuration of the substrate between the first region and the second region. Thus, when the current change is induced by the change in a physical configuration of the substrate, a determination error that the contaminants on the semiconductor substrate may exist based on the current change may be prevented.

Abstract: The present invention is directed to a wafer holder and a related wafer conveyor system. The wafer holder holds a wafer and moves horizontally within a chamber. A contact area between the wafer and the wafer holder is reduced, and potential contaminants generated by ear between components of the wafer holder are trapped by an airtight cover. Since the wafer holder moves horizontally while being fixed to a guide rail, the wafer conveyor system reduces friction between the guide rail and the wafer holder.