Publication number: 20140124782
Abstract: An image sensor may include a first layer on a substrate and including a chalcogenide-containing material, and a detection part connected to the first layer and configured to detect a variation in electric characteristics of the first layer. The chalcogenide-containing material may include one of AxByS1-x-y, AxByTe1-x-y, and AxBySe1-x-y, where 0<x<1, 0<y<1, A may include at least one of Si, Ge, Sn, Pb, Al, Ga, In, Cu, Zn, Ag, Cd, Ti, V, Cr, Mn, Fe, Co, and Ni, and B may include at least one of Sb, Bi, As, and P.
Type:
Application
Filed:
November 6, 2013
Publication date:
May 8, 2014
Applicant:
SAMSUNG ELECTRONICS CO., LTD.
Inventors:
Jung-kyu JUNG, Taeyon LEE, Yoondong PARK, Hyunseok LEE