Patents by Inventor Jung-Saeng Kim
Jung-Saeng Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240014235Abstract: An image sensor includes a semiconductor layer including a first section and a second section, the semiconductor layer having a first surface and a second surface that face each other, a device isolation layer in the semiconductor layer and defining a plurality of pixels; a first grid pattern on the first surface of the semiconductor layer over the first section; and a light-shield pattern on the first surface of the semiconductor layer over the second section. A top surface of the first grid pattern is located at a first level, a top surface of the light-shield pattern is located at a second level, the first level is lower than the second level, and the first and second levels are defined with respect to the first surface of the semiconductor layer.Type: ApplicationFiled: September 20, 2023Publication date: January 11, 2024Inventors: Yun Ki Lee, Jung-Saeng Kim, Hyungeun Yoo
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Patent number: 11843882Abstract: An image sensor includes two or more phase-difference detection pixels disposed adjacent to each other, a plurality of general pixels spaced apart from the phase-difference detection pixels, first and second peripheral pixels, and first to third light shields. The first and second peripheral pixels are adjacent to the phase-difference detection pixels, and between the phase-difference detection pixels and the general pixels. The first light shield is disposed in one of the general pixels and has a first width. The second light shield extends into the first peripheral pixel from a first area between the phase-difference detection pixels and the first peripheral pixel, and has a second width different from the first width. The third light shield extends into the second peripheral pixel from a second area between the phase-difference detection pixels and the second peripheral pixel, and has a third width different from the first width.Type: GrantFiled: August 19, 2021Date of Patent: December 12, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Tae Sub Jung, Dong Min Keum, Bum Suk Kim, Jung Saeng Kim, Jong Hoon Park, Min Jang
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Patent number: 11784202Abstract: An image sensor includes a semiconductor layer including a first section and a second section, the semiconductor layer having a first surface and a second surface that face each other; a device isolation layer in the semiconductor layer and defining a plurality of pixels; a first grid pattern on the first surface of the semiconductor layer over the first section; and a light-shield pattern on the first surface of the semiconductor layer over the second section. A top surface of the first grid pattern is located at a first level, a top surface of the light-shield pattern is located at a second level, the first level is lower than the second level, and the first and second levels are defined with respect to the first surface of the semiconductor layer.Type: GrantFiled: May 9, 2022Date of Patent: October 10, 2023Inventors: Yun Ki Lee, Jung-Saeng Kim, Hyungeun Yoo
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Publication number: 20230246046Abstract: Image sensors are provided. The image sensors may include a plurality of unit pixels and a color filter array on the plurality of unit pixels. The color filter array may include a color filter unit including four color filters that are arranged in a two-by-two array, and the color filter unit may include two yellow color filters, a cyan color filter, and one of a red color filter or a green color filter.Type: ApplicationFiled: April 10, 2023Publication date: August 3, 2023Inventors: Bomi KIM, BumSuk Kim, Jung-Saeng Kim, Yun Ki Lee, Taesub Jung
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Patent number: 11631710Abstract: Image sensors are provided. The image sensors may include a plurality of unit pixels and a color filter array on the plurality of unit pixels. The color filter array may include a color filter unit including four color filters that are arranged in a two-by-two array, and the color filter unit may include two yellow color filters, a cyan color filter, and one of a red color filter or a green color filter.Type: GrantFiled: September 23, 2020Date of Patent: April 18, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Bomi Kim, BumSuk Kim, Jung-Saeng Kim, Yun Ki Lee, Taesub Jung
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Publication number: 20220262840Abstract: An image sensor includes a semiconductor layer including a first section and a second section, the semiconductor layer having a first surface and a second surface that face each other; a device isolation layer in the semiconductor layer and defining a plurality of pixels; a first grid pattern on the first surface of the semiconductor layer over the first section; and a light-shield pattern on the first surface of the semiconductor layer over the second section. A top surface of the first grid pattern is located at a first level, a top surface of the light-shield pattern is located at a second level, the first level is lower than the second level, and the first and second levels are defined with respect to the first surface of the semiconductor layer.Type: ApplicationFiled: May 9, 2022Publication date: August 18, 2022Inventors: YUN KI LEE, JUNG-SAENG KIM, HYUNGEUN YOO
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Publication number: 20220190017Abstract: An image sensor in which a shading phenomenon is decreased and the quality is increased is provided. The image sensor includes a light-receiving region including a plurality of unit pixels. The image sensor further includes a first region with unit pixels adjacent to a center of the light-receiving region, and a second region with the unit pixels spaced apart from the center of the light-receiving region. In both regions, a plurality of color filters corresponding to the plurality of unit pixels is disposed on a first face of the substrate, as well as a grid pattern interposed between the plurality of color filters defining boundaries between the unit pixels. A width of the grid pattern in the second region is greater than a width of the grid pattern in the first region, thereby adjusting light receiving areas near the edge of the image sensor to correct for a shading phenomenon.Type: ApplicationFiled: September 1, 2021Publication date: June 16, 2022Inventors: Jun Sung Park, Jin Ho Kim, Yun Ki Lee, Bum Suk Kim, Jung-Saeng Kim, Dong Kyu Lee, Tae Sung Lee
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Patent number: 11355541Abstract: An image sensor includes a semiconductor layer including a first section and a second section, the semiconductor layer having a first surface and a second surface that face each other; a device isolation layer in the semiconductor layer and defining a plurality of pixels; a first grid pattern on the first surface of the semiconductor layer over the first section; and a light-shield pattern on the first surface of the semiconductor layer over the second section. A top surface of the first grid pattern is located at a first level, a top surface of the light-shield pattern is located at a second level, the first level is lower than the second level, and the first and second levels are defined with respect to the first surface of the semiconductor layer.Type: GrantFiled: December 11, 2019Date of Patent: June 7, 2022Assignee: Samsung Electronics Co., Ltd.Inventors: Yun Ki Lee, Jung-Saeng Kim, Hyungeun Yoo
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Publication number: 20210385400Abstract: An image sensor includes two or more phase-difference detection pixels disposed adjacent to each other, a plurality of general pixels spaced apart from the phase-difference detection pixels, first and second peripheral pixels, and first to third light shields. The first and second peripheral pixels are adjacent to the phase-difference detection pixels, and between the phase-difference detection pixels and the general pixels. The first light shield is disposed in one of the general pixels and has a first width. The second light shield extends into the first peripheral pixel from a first area between the phase-difference detection pixels and the first peripheral pixel, and has a second width different from the first width. The third light shield extends into the second peripheral pixel from a second area between the phase-difference detection pixels and the second peripheral pixel, and has a third width different from the first width.Type: ApplicationFiled: August 19, 2021Publication date: December 9, 2021Inventors: TAE SUB JUNG, DONG MIN KEUM, BUM SUK KIM, JUNG SAENG KIM, JONG HOON PARK, MIN JANG
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Patent number: 11056523Abstract: Optical sensors including a light-impeding pattern are provided. The optical sensors may include a plurality of photoelectric conversion regions, a plurality of lenses on the plurality of photoelectric conversion regions, and a light-impeding layer extending between the plurality of photoelectric conversion regions and the plurality of lenses. The light-impeding layer may include an opening between a first one of the plurality of photoelectric conversion regions and a first one of the plurality of lenses. The optical sensors may be configured to be assembled with a display panel such that the plurality of lenses are disposed between the light-impeding layer and the display panel.Type: GrantFiled: March 27, 2020Date of Patent: July 6, 2021Inventors: Jonghoon Park, Bumsuk Kim, Jung-Saeng Kim, Min Jang, Taesub Jung, Hyukjin Jung, Dongmin Keum, Changrok Moon
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Patent number: 10892289Abstract: Optical sensors including a light-impeding pattern are provided. The optical sensors may include a plurality of photoelectric conversion regions, a plurality of lenses on the plurality of photoelectric conversion regions, and a light-impeding layer extending between the plurality of photoelectric conversion regions and the plurality of lenses. The light-impeding layer may include an opening between a first one of the plurality of photoelectric conversion regions and a first one of the plurality of lenses. The optical sensors may be configured to be assembled with a display panel such that the plurality of lenses are disposed between the light-impeding layer and the display panel.Type: GrantFiled: February 7, 2020Date of Patent: January 12, 2021Assignee: Samsung Electronics Co., Ltd.Inventors: Jonghoon Park, BumSuk Kim, Jung-Saeng Kim, Min Jang, Taesub Jung, Hyukjin Jung, Dongmin Keum, Changrok Moon
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Publication number: 20210005657Abstract: Image sensors are provided. The image sensors may include a plurality of unit pixels and a color filter array on the plurality of unit pixels. The color filter array may include a color filter unit including four color filters that are arranged in a two-by-two array, and the color filter unit may include two yellow color filters, a cyan color filter, and one of a red color filter or a green color filter.Type: ApplicationFiled: September 23, 2020Publication date: January 7, 2021Inventors: Bomi KIM, BumSuk KIM, Jung-Saeng KIM, Yun Ki LEE, Taesub JUNG
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Publication number: 20200404203Abstract: An image sensor includes two or more phase-difference detection pixels disposed adjacent to each other, a plurality of general pixels spaced apart from the phase-difference detection pixels, first and second peripheral pixels, and first to third light shields. The first and second peripheral pixels are adjacent to the phase-difference detection pixels, and between the phase-difference detection pixels and the general pixels. The first light shield is disposed in one of the general pixels and has a first width. The second light shield extends into the first peripheral pixel from a first area between the phase-difference detection pixels and the first peripheral pixel, and has a second width different from the first width. The third light shield extends into the second peripheral pixel from a second area between the phase-difference detection pixels and the second peripheral pixel, and has a third width different from the first width.Type: ApplicationFiled: September 1, 2020Publication date: December 24, 2020Inventors: TAE SUB JUNG, DONG MIN KEUM, BUM SUK KIM, JUNG SAENG KIM, JONG HOON PARK, MIN JANG
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Patent number: 10861891Abstract: An electronic device may include a photoelectric element, a shielding layer on the photoelectric element, and a color filter structure on the shielding layer. The shielding layer may define a first opening over the photoelectric element. The color filter structure may define a second opening over the photoelectric element and the first opening. The color filter structure may appear dark from a view facing the color filter structure.Type: GrantFiled: January 23, 2020Date of Patent: December 8, 2020Assignee: Samsung Electronics Co., Ltd.Inventors: Bum Suk Kim, Yun Ki Lee, Jung-Saeng Kim, Jong Hoon Park, Jun Sung Park, Chang Rok Moon
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Patent number: 10819929Abstract: An image sensor includes two or more phase-difference detection pixels disposed adjacent to each other, a plurality of general pixels spaced apart from the phase-difference detection pixels, first and second peripheral pixels, and first to third light shields. The first and second peripheral pixels are adjacent to the phase-difference detection pixels, and between the phase-difference detection pixels and the general pixels. The first light shield is disposed in one of the general pixels and has a first width. The second light shield extends into the first peripheral pixel from a first area between the phase-difference detection pixels and the first peripheral pixel, and has a second width different from the first width. The third light shield extends into the second peripheral pixel from a second area between the phase-difference detection pixels and the second peripheral pixel, and has a third width different from the first width.Type: GrantFiled: May 30, 2019Date of Patent: October 27, 2020Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Tae Sub Jung, Dong Min Keum, Bum Suk Kim, Jung Saeng Kim, Jong Hoon Park, Min Jang
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Patent number: 10811450Abstract: Image sensors are provided. The image sensors may include a plurality of unit pixels and a color filter array on the plurality of unit pixels. The color filter array may include a color filter unit including four color filters that are arranged in a two-by-two array, and the color filter unit may include two yellow color filters, a cyan color filter, and one of a red color filter or a green color filter.Type: GrantFiled: September 6, 2018Date of Patent: October 20, 2020Assignee: Samsung Electronics Co., Ltd.Inventors: Bomi Kim, BumSuk Kim, Jung-Saeng Kim, Yun Ki Lee, Taesub Jung
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Publication number: 20200227459Abstract: Optical sensors including a light-impeding pattern are provided. The optical sensors may include a plurality of photoelectric conversion regions, a plurality of lenses on the plurality of photoelectric conversion regions, and a light-impeding layer extending between the plurality of photoelectric conversion regions and the plurality of lenses. The light-impeding layer may include an opening between a first one of the plurality of photoelectric conversion regions and a first one of the plurality of lenses. The optical sensors may be configured to be assembled with a display panel such that the plurality of lenses are disposed between the light-impeding layer and the display panel.Type: ApplicationFiled: March 27, 2020Publication date: July 16, 2020Inventors: JONGHOON PARK, BUMSUK KIM, JUNG-SAENG KIM, MIN JANG, TAESUB JUNG, HYUKJIN JUNG, DONGMIN KEUM, CHANGROK MOON
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Publication number: 20200227455Abstract: An image sensor includes a semiconductor layer including a first section and a second section, the semiconductor layer having a first surface and a second surface that face each other; a device isolation layer in the semiconductor layer and defining a plurality of pixels; a first grid pattern on the first surface of the semiconductor layer over the first section; and a light-shield pattern on the first surface of the semiconductor layer over the second section. A top surface of the first grid pattern is located at a first level, a top surface of the light-shield pattern is located at a second level, the first level is lower than the second level, and the first and second levels are defined with respect to the first surface of the semiconductor layer.Type: ApplicationFiled: December 11, 2019Publication date: July 16, 2020Inventors: YUN KI LEE, JUNG-SAENG KIM, HYUNGEUN YOO
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Publication number: 20200176497Abstract: An electronic device may include a photoelectric element, a shielding layer on the photoelectric element, and a color filter structure on the shielding layer. The shielding layer may define a first opening over the photoelectric element. The color filter structure may define a second opening over the photoelectric element and the first opening. The color filter structure may appear dark from a view facing the color filter structure.Type: ApplicationFiled: January 23, 2020Publication date: June 4, 2020Applicant: Samsung Electronics Co., Ltd.Inventors: Bum Suk Kim, Yun Ki Lee, Jung-Saeng Kim, Jong Hoon Park, Jun Sung Park, Chang Rok Moon
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Publication number: 20200176499Abstract: Optical sensors including a light-impeding pattern are provided. The optical sensors may include a plurality of photoelectric conversion regions, a plurality of lenses on the plurality of photoelectric conversion regions, and a light-impeding layer extending between the plurality of photoelectric conversion regions and the plurality of lenses. The light-impeding layer may include an opening between a first one of the plurality of photoelectric conversion regions and a first one of the plurality of lenses. The optical sensors may be configured to be assembled with a display panel such that the plurality of lenses are disposed between the light-impeding layer and the display panel.Type: ApplicationFiled: February 7, 2020Publication date: June 4, 2020Inventors: JONGHOON PARK, BUMSUK KIM, JUNG-SAENG KIM, MIN JANG, TAESUB JUNG, HYUKJIN JUNG, DONGMIN KEUM, CHANGROK MOON