Abstract: A package structure of a light-emitting element includes a shell, a first conductive path, a second conductive path, a light-emitting device, a cover, a first light-transmitting sensing electrode, and a second light-transmitting sensing electrode. The shell has a top surface and a bottom surface, and the top surface is recessed toward the bottom surface to form an accommodating space. Each of the first and second conductive paths extends from the top surface to the bottom surface. The light-emitting device is disposed in the accommodating space. The cover is disposed over the shell. The first and second light-transmitting sensing electrodes are disposed on the same surface of the cover, and a capacitance is formed between the first and second light-transmitting sensing electrodes. The first and second light-transmitting sensing electrodes are electrically connected to the first and second conductive paths, respectively.

Abstract: A package structure of a light-emitting element includes a shell, a first conductive path, a second conductive path, a light-emitting device, a cover, a first light-transmitting sensing electrode, and a second light-transmitting sensing electrode. The shell has a top surface and a bottom surface, and the top surface is recessed toward the bottom surface to form an accommodating space. Each of the first and second conductive paths extends from the top surface to the bottom surface. The light-emitting device is disposed in the accommodating space. The cover is disposed over the shell. The first and second light-transmitting sensing electrodes are disposed on the same surface of the cover, and a capacitance is formed between the first and second light-transmitting sensing electrodes. The first and second light-transmitting sensing electrodes are electrically connected to the first and second conductive paths, respectively.

Abstract: The present disclosure provide a light emitting device package, including a light emitting die emitting a first color and an encapsulant encapsulating the light emitting die. The encapsulant includes a matrix and a plurality of inert particles dispersed in the matrix. The inert particles are transparent to the first color, and a radiation pattern of the light emitting package is lambertian-like.

Abstract: A lighting apparatus includes a substrate, a plurality of light-emitting dies disposed on the substrate and spaced apart from one another, a continuous structure disposed over the substrate and covering the light-emitting dies within, and a filler. The light-emitting dies each are covered with an individual phosphor coating and the filler is between the continuous structure and the phosphor coating for each of the light-emitting dies. The lighting apparatus has a substantially white appearance when the plurality of light-emitting dies is turned off.

Abstract: A lighting apparatus includes a substrate, a plurality of light-emitting dies disposed on the substrate and spaced apart from one another, a continuous structure disposed over the substrate and covering the light-emitting dies within, and a filler. The light-emitting dies each are covered with an individual phosphor coating and the filler is between the continuous structure and the phosphor coating for each of the light-emitting dies. The lighting apparatus has a substantially white appearance when the plurality of light-emitting dies is turned off.

Abstract: A LED die and method for bonding, dicing, and forming the LED die are disclosed. In an example, the method includes forming a LED wafer, wherein the LED wafer includes a substrate and a plurality of epitaxial layers disposed over the substrate, wherein the plurality of epitaxial layers are configured to form a LED; bonding the LED wafer to a base-board to form a LED pair; and after bonding, dicing the LED pair, wherein the dicing includes simultaneously dicing the LED wafer and the base-board, thereby forming LED dies.

Abstract: A lighting apparatus includes a substrate, a plurality of light-emitting dies, a continuous encapsulation structure, and a gel. The plurality of light-emitting dies are disposed on the substrate and spaced apart from one another. The light-emitting dies each are covered with a respective individual phosphor coating conformally. The continuous encapsulation structure has a curved surface disposed over the substrate and encapsulates the light-emitting dies within. The gel is disposed between the encapsulation structure and the phosphor coating for each of the light-emitting dies. The gel contains diffuser particles. The lighting apparatus has a substantially white appearance in an off state when the plurality of light-emitting dies is turned off.

Abstract: A device includes a substrate; a group III-V semiconductor layer disposed over the substrate; and a seed layer disposed over the group III-V semiconductor layer. The substrate is a printed circuit board. The group III-V semiconductor layer includes a multiple quantum well (MQW) layer, a p-type doped layer, and an n-type doped layer. The seed layer includes a plurality of miniature elements. The miniature elements each contain a single-crystal material suitable for epitaxially growing the group III-V semiconductor layer. The miniature elements collectively cover less than 100% of a surface of the group III-V semiconductor layer.

Abstract: The present disclosure involves a lighting instrument. The lighting instrument includes a board or substrate, for example, a printed circuit board substrate. The lighting instrument includes a plurality of light-emitting diode (LED) dies disposed on the substrate. The LED dies are spaced apart from one another. Each LED die is covered with a respective individual phosphor coating that is coated around the LED die conformally. Due at least in part to the individual phosphor coatings, the LED dies and the lighting instrument may assume a substantially white appearance in an off state. The lighting instrument also includes an encapsulation structure disposed over the substrate. The encapsulation structure may be a diffuser cap that encapsulates the light-emitting dies within. A diffuser gel fills the space between the encapsulation structure and the LED dies.

Abstract: A seed layer for growing a group 111-V semiconductor structure 1s embedded in a dielectric material on a carrier substrate. After the group 111-V semiconductor structure is grown, the dielectric material is removed by wet etch to detach the carrier substrate. The group 111-V semiconductor structure includes a thick gallium nitride layer of at least 100 microns or a light-emitting structure.

Abstract: The present disclosure relates to high efficiency light emitting diode devices and methods for fabricating the same. In accordance with one or more embodiments, a light emitting diode device includes a substrate having one or more recessed features formed on a surface thereof and one or more omni-directional reflectors formed to overlie the one or more recessed features. A light emitting diode layer is formed on the surface of the substrate to overlie the omni-directional reflector. The one or more omni-directional reflectors are adapted to efficiently reflect light.

Abstract: A seed layer for growing a group III-V semiconductor structure is embedded in a dielectric material on a carrier substrate. After the group III-V semiconductor structure is grown, the dielectric material is removed by wet etch to detach the carrier substrate. The group III-V semiconductor structure includes a thick gallium nitride layer of at least 100 microns or a light-emitting structure.

Abstract: A light emitting diode structure and methods of manufacturing the same are disclosed. In an example, a light emitting diode structure includes a crystalline substrate having a thickness that is greater than or equal to about 250 ?m, wherein the crystalline substrate has a first roughened surface and a second roughened surface, the second roughened surface being opposite the first roughened surface; a plurality of epitaxy layers disposed over the first roughened surface, the plurality of epitaxy layers being configured as a light emitting diode; and another substrate bonded to the crystalline substrate such that the plurality of epitaxy layers are disposed between the another substrate and the first roughened surface of the crystalline substrate.

Abstract: A LED die and method for bonding, dicing, and forming the LED die are disclosed. In an example, the method includes forming a LED wafer, wherein the LED wafer includes a substrate and a plurality of epitaxial layers disposed over the substrate, wherein the plurality of epitaxial layers are configured to form a LED; bonding the LED wafer to a base-board to form a LED pair; and after bonding, dicing the LED pair, wherein the dicing includes simultaneously dicing the LED wafer and the base-board, thereby forming LED dies.

Abstract: A seed layer for growing a group III-V semiconductor structure is embedded in a dielectric material on a carrier substrate. After the group III-V semiconductor structure is grown, the dielectric material is removed by wet etch to detach the carrier substrate. The group III-V semiconductor structure includes a thick gallium nitride layer of at least 100 microns or a light-emitting structure.

Abstract: The present disclosure relates to high efficiency light emitting diode devices and methods for fabricating the same. In accordance with one or more embodiments, a light emitting diode device includes a substrate having one or more recessed features formed on a surface thereof and one or more omni-directional reflectors formed to overlie the one or more recessed features. A light emitting diode layer is formed on the surface of the substrate to overlie the omni-directional reflector. The one or more omni-directional reflectors are adapted to efficiently reflect light.