Abstract: A semiconductor device can include a plurality of landing pads arranged according to a layout on a substrate, wherein a cross-sectional shape of each of the landing pads has a diamond shape so that opposing interior angles of the diamond shape are equal to one another and adjacent interior angles of the diamond shape are unequal to one another.

Abstract: A semiconductor device can include a plurality of landing pads arranged according to a layout on a substrate, wherein a cross-sectional shape of each of the landing pads has a diamond shape so that opposing interior angles of the diamond shape are equal to one another and adjacent interior angles of the diamond shape are unequal to one another.

Abstract: A semiconductor device can include a plurality of landing pads arranged according to a layout on a substrate, wherein a cross-sectional shape of each of the landing pads has a diamond shape so that opposing interior angles of the diamond shape are equal to one another and adjacent interior angles of the diamond shape are unequal to one another.

Abstract: The present invention relates to an insert unit inserted during an artificial knee joint operation. An insert unit for an artificial knee joint according to an embodiment of the present invention includes a tibial member configured for coupling to the end of the tibia during an artificial knee joint operation, an insert configured for coupling to an upper side of the tibial member, and a locking rod coupling together the tibial member and the insert by penetrating through the tibial member and the insert, wherein the locking rod comprises a head portion formed at the upper end, and the head portion comprises a lip protruding outward to provide a constraint in relation to the insert during an articular movement such that the locking rod does not dig into the tibial member, to increase a coupling strength of the insert unit.

Abstract: A semiconductor device can include a plurality of landing pads arranged according to a layout on a substrate, wherein a cross-sectional shape of each of the landing pads has a diamond shape so that opposing interior angles of the diamond shape are equal to one another and adjacent interior angles of the diamond shape are unequal to one another.

Abstract: An artificial knee joint, which includes an upper surface at which a post performs a motion relative to a cam of the thighbone coupling member, is configured such that a radius of curvature of an upper curved surface extending posteriorly from the upper surface is larger than that of a lower curved surface, so as to prevent the cam of the thighbone coupling member from deviating from an inflection point existing between the upper curved surface and the lower curved surface, and is configured such that the upper surface is inclined at a predetermined angle, so as to allow the thighbone coupling member to be restored while naturally descending along the upper surface even when the thighbone coupling member is dislocated, thereby increasing a jump distance without increasing an amount of bone to be cut.

Abstract: A semiconductor device can include a plurality of landing pads arranged according to a layout on a substrate, wherein a cross-sectional shape of each of the landing pads has a diamond shape so that opposing interior angles of the diamond shape are equal to one another and adjacent interior angles of the diamond shape are unequal to one another.

Abstract: A semiconductor device can include a plurality of landing pads arranged according to a layout on a substrate, wherein a cross-sectional shape of each of the landing pads has a diamond shape so that opposing interior angles of the diamond shape are equal to one another and adjacent interior angles of the diamond shape are unequal to one another.

Abstract: The present invention relates to an asymmetric artificial knee joint that includes a bearing member having a medial sulcus and a lateral sulcus, and a femoral component having a medial condyle and a lateral condyle and disposed on the bearing member.

Abstract: Disclosed is a method of manufacturing semiconductor devices. A dummy gate structure is formed on a pattern area defined by an edge area of a substrate. An interlayer insulating layer pattern is formed to cover the pattern area and exposing the edge area of the substrate. A blocking pattern is formed on the interlayer insulating layer pattern such that the edge area of the substrate is covered with the blocking pattern and the pattern area of the substrate is exposed through the blocking pattern. A gate hole in the pattern area of the substrate in correspondence to the dummy gate structure, and a metal gate structure is formed in the gate hole. Accordingly, the edge area of the substrate is protected in the etching process and the deposition process of the replacement gate metal (RGM) process.

Abstract: The present invention relates to an insert unit inserted during an artificial knee joint operation. An insert unit for an artificial knee joint according to an embodiment of the present invention includes a tibial member configured for coupling to the end of the tibia during an artificial knee joint operation, an insert configured for coupling to an upper side of the tibial member, and a locking rod coupling together the tibial member and the insert by penetrating through the tibial member and the insert, wherein the locking rod comprises a head portion formed at the upper end, and the head portion comprises a lip protruding outward to provide a constraint in relation to the insert during an articular movement such that the locking rod does not dig into the tibial member, to increase a coupling strength of the insert unit.

Abstract: A semiconductor device can include a plurality of landing pads arranged according to a layout on a substrate, wherein a cross-sectional shape of each of the landing pads has a diamond shape so that opposing interior angles of the diamond shape are equal to one another and adjacent interior angles of the diamond shape are unequal to one another.

Abstract: The present invention relates to an implant playing a role as a joint in coupling a revision implant in revision total knee arthroplasty and, more specifically, to an offset adapter unit comprising an adapter which couples a femoral member or a tibial member to a stem member in revision total knee arthroplasty; and a nut coupled to the adapter, thereby improving the strength by considering fracture occurring in the narrowest area.

Abstract: An artificial knee joint, which includes an upper surface at which a post performs a motion relative to a cam of the thighbone coupling member, is configured such that a radius of curvature of an upper curved surface extending posteriorly from the upper surface is larger than that of a lower curved surface, so as to prevent the cam of the thighbone coupling member from deviating from an inflection point existing between the upper curved surface and the lower curved surface, and is configured such that the upper surface is inclined at a predetermined angle, so as to allow the thighbone coupling member to be restored while naturally descending along the upper surface even when the thighbone coupling member is dislocated, thereby increasing a jump distance without increasing an amount of bone to be cut.

Abstract: Methods of forming a semiconductor device can be provided by forming a first molding layer on a substrate and forming a first hole through the first molding layer. A second molding layer can be formed on the first molding layer so that the first hole is retained in the first molding layer and a second hole can be formed through the second molding layer to connect with the first hole. A capacitor electrode can be formed in the first and second holes.

Abstract: A semiconductor device can include a plurality of landing pads arranged according to a layout on a substrate, wherein a cross-sectional shape of each of the landing pads has a diamond shape so that opposing interior angles of the diamond shape are equal to one another and adjacent interior angles of the diamond shape are unequal to one another.

Abstract: A semiconductor device can include a plurality of landing pads arranged according to a layout on a substrate, wherein a cross-sectional shape of each of the landing pads has a diamond shape so that opposing interior angles of the diamond shape are equal to one another and adjacent interior angles of the diamond shape are unequal to one another.

Abstract: An arc discharge apparatus includes a body unit including a housing and a transmissive member fixed to the housing, the housing having a coolant inlet and a coolant outlet, and an electrode unit on the housing, the electrode unit including an anode and a cathode facing each other, wherein the anode includes a main body portion connected to the housing, an anode tip coupled to the main body portion, and a cooling line in the anode and in contact with an inner wall of the anode tip, the cooling line being connected to the coolant inlet and to the coolant outlet.

Abstract: A semiconductor device can include a plurality of landing pads arranged according to a layout on a substrate, wherein a cross-sectional shape of each of the landing pads has a diamond shape so that opposing interior angles of the diamond shape are equal to one another and adjacent interior angles of the diamond shape are unequal to one another.

Abstract: Disclosed is a method of manufacturing semiconductor devices. A dummy gate structure is formed on a pattern area defined by an edge area of a substrate. An interlayer insulating layer pattern is formed to cover the pattern area and exposing the edge area of the substrate. A blocking pattern is formed on the interlayer insulating layer pattern such that the edge area of the substrate is covered with the blocking pattern and the pattern area of the substrate is exposed through the blocking pattern. A gate hole in the pattern area of the substrate in correspondence to the dummy gate structure, and a metal gate structure is formed in the gate hole. Accordingly, the edge area of the substrate is protected in the etching process and the deposition process of the replacement gate metal (RGM) process.